Datasheet BFQ161 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ161
NPN video transistor
Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05
1997 Oct 02
Page 2
Philips Semiconductors Product specification
NPN video transistor BFQ161

FEATURES

Low output capacitance
High gain bandwidth

DESCRIPTION

NPN video transistor in a SOT54 (TO-92) plastic package.
age
1
2
3
High current applicability
Good thermal stability
Gold metallization ensures
excellent reliability.

APPLICATIONS

PINNING

PIN DESCRIPTION
1 base 2 collector 3 emitter
MSB033
Fig.1 Simplified outline
(SOT54; TO-92).
Pre-stage driver in high resolution colour graphics monitors.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
T
j
collector-base voltage open emitter 20 V collector-emitter voltage RBE= 100 Ω−19 V collector current (DC) 500 mA total power dissipation Ts≤ 75 °C; note 1 1W DC current gain IC= 300 mA; VCE=5V 25 transition frequency IC= 300 mA; VCE=5V; T
=25°C1GHz
amb
junction temperature 150 °C
Note
1. T
is the temperature at the soldering point of the collector pin, 4 mm from the body.
s

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter 20 V collector-emitter voltage open base 10 V collector-emitter voltage RBE= 100 Ω−19 V emitter-base voltage open collector 3V collector current (DC) 500 mA total power dissipation Ts≤ 75 °C; notes 1 and 2; see Fig.3 1W storage temperature range 65 +150 °C junction temperature 150 °C
Notes
is the temperature at the soldering point of the collector pin, 4 mm from the body.
1. T
s
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.
Page 3
Philips Semiconductors Product specification
NPN video transistor BFQ161

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
R
th j-a
R
th s-a
Note
1. T
s

CHARACTERISTICS

=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
cb
C
c
f
T
thermal resistance from junction to soldering point note 1 75 K/W thermal resistance from junction to ambient 175 K/W thermal resistance from soldering point to ambient 100 K/W
is the temperature at the soldering point of the collector pin, 4 mm from the body.
collector-base breakdown voltage IC= 5 mA; IE=0 20 −−V collector-emitter breakdown voltage IC= 10 mA; IB=0 10 −−V emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V collector-emitter cut-off current IB= 0; VCE=10V −−100 µA DC current gain IC= 300 mA; VCE=5V;
T
=25°C; see Fig.4
amb
I
= 100 mA; VCE=5V;
C
T
=25°C; see Fig.4
amb
collector-base capacitance IC= 0; VCB= 5 V; f = 1 MHz;
25 −−
40 50
4.3 pF
see Fig.5 collector capacitance IE=ie= 0; VCB=5V; f=1MHz 6 pF transition frequency IC= 300 mA; VCE= 5 V; see Fig.6 1 −−GHz
Page 4
Philips Semiconductors Product specification
NPN video transistor BFQ161
600
handbook, halfpage
I
C
(mA)
500
400
300
200
04812
Fig.2 DC SOAR.
V
CEO
MEA204
(V)
1.2
handbook, halfpage
P
tot
(W)
1.0
0.8
0.6
0.4
0.2
0
0 50 100 200
150
Ts (
Fig.3 Power derating curve.
MEA206 - 1
o
C)
70
handbook, halfpage
h
FE
65
60
55
50
0 400 600
VCE= 5 V; T
amb
200
=25°C.
MEA207
IC (mA)
Fig.4 DC current gain as a function of
collector current; typical values.
15
MEA205
VCB (V)
7.5
handbook, halfpage
C
cb
(pF)
6.5
5.5
4.5
3.5 0 5 10 20
f = 1 MHz; T
amb
=25°C.
Fig.5 Collector-base capacitance as a function of
collector-base voltage; typical values.
Page 5
Philips Semiconductors Product specification
NPN video transistor BFQ161
handbook, halfpage
4
f
T
(GHz)
3
2
1
0
0 100 200 300
VCE= 5 V; T
amb
=25°C.
Fig.6 Transition frequency as a function of
collector current; typical values.
MEA203
IC (mA)
Page 6
Philips Semiconductors Product specification
NPN video transistor BFQ161

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

c
E
d
A L
1
D
2
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
5.2
mm
5.0
OUTLINE VERSION
SOT54 TO-92 SC-43
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.40
4.8
4.4
0.56
IEC JEDEC EIAJ
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
2.5
EUROPEAN
PROJECTION
b
e
1
e
ISSUE DATE
97-02-28
Page 7
Philips Semiconductors Product specification
NPN video transistor BFQ161

DEFINITIONS

Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Page 8
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Printed in The Netherlands 127027/00/03/pp8 Date of release: 1997 Oct 02 Document order number: 9397 750 02869
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