Datasheet BFQ149 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ149

PNP 5 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFQ149

DESCRIPTION

PNP transistor in a SOT89 envelope.
It is intended for use in
UHF applications such as broadband
aerial amplifiers (30 to 860 MHz) and
in microwave amplifiers such as radar
systems, spectrum analyzers, etc.,

PINNING

PIN DESCRIPTION

Code: FG
1 emitter
2 collector
3 base

page

using SMD technology.

123

Bottom view

MBK514

Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEO

I

C

P

tot

h

FE

f

T

collector-emitter voltage open base −−−15 V
DC collector current −−−100 mA
total power dissipation up to Ts = 135 °C (note 1) −−1W
DC current gain IC = −70 mA; VCE = −10 V; Tj = 25 °C20 50 −
transition frequency IC = −75 mA; VCE = −10 V;

45−GHz

f = 500 MHz; Tj = 25 °C

G

UM

maximum unilateral power gain IC = −50 mA; VCE = −10 V;

F noise figure I

f = 500 MHz; T

= −50 mA; VCE = −10 V;

C

amb

= 25 °C

− 12 − dB

− 3.75 − dB

Rs=60Ω; f = 500 MHz;
T

= 25 °C

amb

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

tot

T

stg

T

j

collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
emitter-base voltage open collector −−3V
DC collector current −−100 mA
peak collector current f > 1 MHz −−150 mA
total power dissipation up to Ts= 135 °C (note 1) − 1W
storage temperature −65 150 °C
junction temperature − 150 °C

Note

is the temperature at the soldering point of the collector tab.

1. T

s

September 1995 2

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFQ149

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

thermal resistance from junction to
soldering point

Note

is the temperature at the soldering point of the collector tab.

1. T

s

CHARACTERISTICS

= 25 °C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h
f

T

C
C
C
G

FE

c
e
re

UM

collector cut-off current IE = 0; VCB = −10 V; −−100 nA
DC current gain IC= −70 mA; VCE = −10 V 20 50 −
transition frequency IC = −70 mA; VCE = −10 V;

collector capacitance IE= 0; VCB= −10 V; f = 1 MHz − 2 − pF
emitter capacitance IC= 0; VEB= −0.5 V; f = 1 MHz − 4 − pF
feedback capacitance IC = 0; VCE = −10 V; f = 1 MHz − 1.7 − pF
maximum unilateral power gain

(note 1)

F noise figure I

up to Ts = 135 °C (note 1) 40 K/W

45− GHz

f = 500 MHz; T

IC = −50 mA; VCE = −10 V;
f = 500 MHz; T

= −50 mA; VCE = −10 V;

C

amb

amb

= 25 °C

− 12 − dB

= 25 °C

− 3.75 − dB
Rs= 60 Ω; f = 500 MHz;
T

= 25 °C

amb

Note

1. G
G

is the maximum unilateral power gain, assuming S12 is zero and

UM

UM

--------------------------------------------------------------

10



1S

–



2

S

21

2



1S

–



11

22

dB.log=

2

September 1995 3

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFQ149

handbook, halfpage

4

C

c

(pF)

3

2

1

0

020

IE= 0; f = 1 MHz; Tj=25°C.

10

(V)

V

CB

Fig.2 Collector capacitance as a function of

collector-base voltage.

MEA328

handbook, halfpage

8

f

T

(GHz)

6

4

2

0

0 50 100

VCE= −10 V; f = 500 MHz; T

amb

=25°C.

I (mA)

C

Fig.3 Transition frequency as a function of

collector current.

MBB347

I (mA)

C

MBB345

80

handbook, halfpage

h

FE

60

40

20

0

0

VCE= −10 V; Tj=25°C.

100 200

Fig.4 DC current gain as a function of collector

current.

September 1995 4

40

handbook, halfpage

G

UM

(dB)

30

20

10

0

10

Ic= −50 mA; VCE= −10 V; T

2

10

=25°C.

amb

3

10

f (MHz)

Fig.5 Maximum unilateral power gain as a

function of frequency.

MEA329

4

10

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFQ149

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

w M

D

b

3

B

A

E

L

123

b

2

b

1

e

1

e

H

E

c

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

mm

OUTLINE

VERSION

SOT89

1.6

1.4

A

b

0.48

0.35

b

2

1

0.53

0.40

IEC JEDEC EIAJ

b

1.8

1.4

c

D

E

2.6

2.4

e

3.0

3

0.44

4.6

0.37

4.4

REFERENCES

September 1995 5

e

1.5

L

H

E

1

min.

4.25

3.75

0.8

w

0.13

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFQ149

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 6