Datasheet BFQ136 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ136

NPN 4 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

DESCRIPTION

NPN transistor in a four-lead
dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated
from the stud. Diffused
emitter-ballasting resistors and the
application of gold sandwich

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

age

4

31

metallization ensure an optimum
temperature profile and excellent
reliability properties. It features
extremely high output voltage

Top view

2

MBK187

capabilities.
It is primarily intended for final stages

Fig.1 SOT122A.

in UHF amplifiers.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CEO

I

C

P

tot

f

T

collector-emitter voltage open base − 18 V
DC collector current − 600 mA
total power dissipation up to Tc= 100 °C − 9W
transition frequency IC= 500 mA; VCE= 15 V; f = 500 MHz;

4.0 − GHz

Tj=25°C

G

UM

V

o

maximum unilateral power gain IC= 500 mA; VCE= 15 V; f = 800 MHz;

T

=25°C

amb

output voltage Ic= 500 mA; VCE= 15 V;

12.5 − dB

2.5 − V
dim= −60 dB; RL=75Ω;
f

= 793.25 MHz; T

(p+q−r)

amb

=25°C

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

September 1995 2

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-c

collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
emitter-base voltage open collector − 2V
DC collector current − 600 mA
total power dissipation up to Tc= 100 °C − 9W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to case 11 K/W

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h
C
C
C
C
f

T

FE

c
e
re
cs

collector cut-off current IE= 0; VCB= 15 V −−75 µA
DC current gain IC= 500 mA; VCE= 15 V 25 75 −
collector capacitance IE=ie= 0; VCB= 15 V; f = 1 MHz − 7.0 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 40 − pF
feedback capacitance IC= 0; VCE= 15 V; f = 1 MHz − 4.0 − pF
collector-stud capacitance note 1 − 0.8 − pF
transition frequency IC= 500 mA; VCE= 15 V;

− 4.0 − GHz

f = 500 MHz

G

UM

V

o

maximum unilateral power gain
(note 2)

IC= 500 mA; VCE= 15 V;
f = 800 MHz; T

amb

=25°C

− 12.5 − dB

output voltage (see Fig.2) note 3 − 2.5 − V

Notes

1. Measured with emitter and base grounded.

2. G

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

--------------------------------------------------------------

10 log



1S

–



2

S

21

2



1S

–



11

22

dB.=

2

3. dim= −60 dB; IC= 500 mA; VCE= 15 V; RL=75Ω; T

amb

Vp=Voat dim= −60 dB; fp= 795.25 MHz;
Vq=Vo−6 dB; fq= 803.25 MHz;
Vr=Vo−6 dB; fr= 805.25 MHz;
measured at f

= 793.25 MHz.

(p+q−r)

September 1995 3

=25°C;

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

handbook, full pagewidth

input
75 Ω

120

handbook, halfpage

h

FE

14 nH

V

BB

1.5 µF

14 nH

3.3 pF

9 pF

9 pF

6 nH

3 pF

HF choke

1 nF

9 pF

9 pF

4.7 µF

4.7 µF

1 kΩ

DUT

Fig.2 Intermodulation distortion MATV test circuit.

MBB361

12

handbook, halfpage

C

c

(pF)

V

CC

1.8 pF

3 pF

7.5 nH

20 pF

output

75 Ω

36 nH36 nH

MEA261

MEA263

80

40

0

0

VCE= 15 V; Tj=25°C.

40 80 160

120

I (mA)

C

Fig.3 DC current gain as a function of collector

current.

September 1995 4

8

4

0

010

IE=ie= 0; f= 1 MHz; Tj=25°C

(V)

V

CB

Fig.4 Collector capacitance as a function of

collector-base voltage.

20

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

handbook, halfpage

5

f

T

(GHz)

4

3

2

1

0

VCE= 15 V; f = 500 MHz; Tj=25°C

I (mA)

C

Fig.5 Transition frequency as a function of

collector current.

MEA262

100010010

40

handbook, halfpage

G

UM

(dB)

30

20

10

0

0.1 1 10

IC= 500 mA; VCE= 15 V; T

amb

=25°C.

f (MHz)

Fig.6 Maximum unilateral power gain as a

function of frequency.

MEA264

September 1995 5

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

handbook, full pagewidth

IC= 500 mA; VCE= 15 V; T
Zo=50Ω.

amb

1

0.5

1200 MHz

0.2
1000

800

+ j

– j

=25°C.

500

200

0

100

40

0.2

0.5

110520.50.2

1

Fig.7 Common emitter input reflection coefficient (S11).

2

5

10

∞

10

5

2

MEA267

handbook, full pagewidth

IC= 500 mA; VCE= 15 V; T

90°

amb

180°

=25°C.

150°

150°

120°

120°

40

100

200
500

1200 MHz

90°

60°

10 20 30

60°

Fig.8 Common emitter forward transmission coefficient (S21).

30°

+ ϕ

0°

− ϕ

30°

MEA266

September 1995 6

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

handbook, full pagewidth

IC= 500 mA; VCE= 15 V; T

90°

60°

1000

800

0.05 0.10 0.15

60°

amb

180°

=25°C.

150°

150°

120°

120°

90°

40

1200 MHz

500

200

100

Fig.9 Common emitter reverse transmission coefficient (S12).

30°

+ ϕ

0°

− ϕ

30°

MEA268

handbook, full pagewidth

IC= 500 mA; VCE= 15 V; T
Zo=50Ω.

1

0.5

0.2

1200 MHz

1000

0.5

800

500

200
100

40

110520.5

1

amb

+ j

– j

=25°C.

0.2

0

0.2

Fig.10 Common emitter output reflection coefficient (S22).

2

5

10

∞

10

5

2

MEA265

September 1995 7

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT122A

D

A

Q

N

1

N

N

3

L

H

D

1

D

2

H
b

4

ceramic
BeO

metal

A

w

X

c

A

M

1

M

M

1

detail X

W

α

3

1

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

OUTLINE

VERSION

SOT122A

A

5.97

4.74

b

5.85

5.58

D

6.48

6.22

D

1

2

27.56

7.24

25.78

6.93

REFERENCES

cM

D

0.18

7.50

0.14

7.23

IEC JEDEC EIAJ

L

H

9.91

3.18

9.14

2.66

September 1995 8

N

M

1

11.82

1.66

11.04

1.39

1

NN

max.

3.86

1.02

2.92

PROJECTION

Q

3

3.38

2.74

EUROPEAN

W

8-32
UNC

ISSUE DATE

w

1

0.381

97-04-18

α

90°

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 9