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NPN Silicon RF Transistor
Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm
Noise figure F = 1.1 dB at 1.8 GHz
outstanding G
Transition frequency fT = 25 GHz
Gold metallization for high reliability
SIEGET 25 GHz fT - Line
= 20 dB at 1.8 GHz
ma
top view
!
"
AM s
direction of unreeling
SIEGET25
3
4
TSFP-4
BFP420F
XYs
2
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP420F AMs 1 = B 2 = E 3 = C 4 = E
TSFP-4
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation
T
111°C
S
1)
Junction temperature T
Ambient temperature T
Storage temperature T
Symbol Value Unit
4.5 V
15
1.5
35 mA
3
160 mW
150 °C
-65 ... 150
-65 ... 150
C
B
P
CEO
CBO
EBO
tot
j
A
stg
Thermal Resistance
Junction - soldering point
1
T
is measured on the emitter lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
R
thJS
240
K/W
Dec-07-20011
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SIEGET25
C
C
S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFP420F
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
= 1 mA, IB = 0
C
Collector-base cutoff current
V
= 5 V, IE = 0
CB
Emitter-base cutoff current
V
= 1.5 V, IC = 0
EB
DC current gain
I
= 20 mA, V
= 4 V
E
AC characteristics (verified by random sampling)
Transition frequency
I
= 30 mA, VCE = 3 V, f = 2 GHz
C
Collector-base capacitance
V
= 2 V, f = 1 MHz
CB
Collector-emitter capacitance
V
= 2 V, f = 1 MHz
CE
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Noise figure
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CBO
I
EBO
h
FE
f
T
C
cb
C
ce
C
eb
F
4.5 5 - V
- - 200 nA
- - 35 µA
50 80 150
-
18 25 - GHz
- 0.15 0.3 pF
- 0.33 -
- 0.5 -
- 1.1 - dB
I
= 5 mA, VCE = 2 V, ZS = Z
C
Sopt
,
f = 1.8 GHz
Power gain, maximum available 1)
I
= 20 mA, VCE = 2 V, ZS = Z
C
Sopt
, ZL = Z
Lopt
,
G
ma
- 20 -
f = 1.8 GHz
Insertion power gain
I
= 20 mA, VCE = 2 V, f = 1.8 GHz,
C
Z
= ZL = 50
S
Third order intercept point at output2)
I
= 20 mA, VCE = 2 V, ZS=ZL=50,
C
|S21|
IP
3
2
- 17 -
- 24 - dBm
f = 1.8 GHz
1dB Compression point at output3)
I
= 20 mA, VCE = 2 V, f = 1.8 GHz,
C
Z
=ZL=50
1
G
ma
2
IP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50
3
DC current no input power
= |
S
/ S12| (k-(k2-1)
21
1/2
)
from 0.1MHz to 6GHz.
P
-1dB
- 10.5 -
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SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
BFP420F
IS =
0.20045 fA
VAF = 28.383 V
NE = 2.0518
-
VAR = 19.705 V
NC = 1.1724
RBM = 3.4849
-
CJE = 1.8063 fF
TF = 6.7661 ps
ITF = 1mA
VJC = 0.81969 V
TR = 2.3249 ns
MJS = 0
XTI = 3
-
-
BF = 72.534
IKF = 0.48731 A
BR = 7.8287
IKR = 0.69141 A
RB = 8.5757
RE = 0.31111
VJE = 0.8051 V
XTF = 0.42199
PTF = 0 deg
MJC = 0.30232
CJS = 0F
XTB = 0
FC = 0.73234
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS = 3.5 fA
N =
1.02 -
-
-
-
-
-
-
NF = 1.2432
-
ISE = 19.049 fA
NR = 1.3325
-
ISC = 0.019237 fA
IRB = 0.72983 mA
RC = 0.10105
MJE = 0.46576
-
VTF = 0.23794 V
CJC = 234.53 fF
XCJC = 0.3
-
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
RS = 10
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
LBO =
C
CB
L
BO
B
L
BI
C
BE
Transistor
Chip
E’
L
EI
L
CI
C’B’
C’-E’Diode
L
CO
C
CE
LEO =
LCO =
C
BO-EO = 0.10 -
K
K
BO-CO = 0.01 -
K
EO-CO = 0.11 -
0.22 nH
0.28 nH
0.22 nH
CBE = 34 fF
L
EO
E
EHA07389
C
= 2 fF
BC
CCE =
33 fF
LBI =
R
LBI
LEI =
R
LEI
LCI =
R
LCI
KCI-EI = -0.05 KBI-CI = -0.08 K
BI-EI = 0.20 -
Valid up to 6GHz
The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
are series resistors for the inductances
R
LxI
the inductances
and
L
xa
. The referencepins for the coupled ports are B, E, C, B`, E`, C`.
L
yb
L
xI
and
K
xa-yb
are the coupling coefficients between
0.42 nH
= 0.15
0.26 nH
= 0.11
0.35 nH
= 0.13
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
Dec-07-20013
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For non-linear simulation:
Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
If you need simulation of the reverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter.
Simulation of package is not necessary for frequencies < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
BFP420F
C
B
EE
EHA07307
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
Higher gain because of lower emitter inductance.
Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
Dec-07-20014
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