Datasheet BFP196 Datasheet (Siemens)

BFP 196

NPN Silicon RF Transistor

• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA

• Power amplifier for DECT and PCN systems

•

f

= 7.5GHz

T

F = 1.5 dB at 900MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration Package

BFP 196 RIs Q62702-F1320 1 = C 2 = E 3 = B 4 = E SOT-143

Maximum Ratings Parameter Symbol Values Unit

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation

T

≤ 77 °C

S

Junction temperature Ambient temperature Storage temperature

V V V V I I P

T T T

C B

CEO CES CBO EBO

tot

j A stg

12 V 20 20

2

100 mA

12

mW 700 150 °C

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

R

thJS

≤

105 K/W

1)

T

is measured on the collector lead at the soldering point to the pcb.

S

Semiconductor Group 1 Dec-13-1996

BFP 196

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 1 mA,

C

I

B

= 0

Collector-emitter cutoff current

V

= 20 V,

CE

V

BE

= 0

Collector-base cutoff current

V

= 10 V,

CB

I

E

= 0

Emitter-base cutoff current

V

= 1 V,

EB

I

C

= 0

DC current gain

I

= 50 mA,

C

V

CE

= 8 V

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

V

12 - -

µA

- - 100 nA

- - 100 µA

- - 1

-

50 100 200

Semiconductor Group 2 Dec-13-1996

BFP 196

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

I

= 70 mA,

C

V

= 8 V, f = 500 MHz

CE

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Collector-emitter capacitance

V

= 10 V, f = 1 MHz

CE

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

I

= 20 mA,

C

f

= 900 MHz

V

CE

= 8 V,

Z

=

S

Z

Sopt

f

C

F

T

GHz

5 7.5 -

cb

pF

- 0.97 1.4

ce

- 0.3 -

eb

- 3.7 dB

-

1.5

-

f

= 1.8 GHz

V

2)

CE

Power gain

I

= 50 mA,

C

Z

=

Z

L

Lopt

f

= 900 MHz

f

= 1.8 GHz

Transducer gain

I

= 50 mA,

C

f

= 900 MHz

f

= 1.8 GHz

2)

G

= |

ma

S

21

V

/

CE

S

= 8 V,

| (k-(k2-1)

12

-

G

ma

Z

=

Z

S

Sopt

-

S

21e

2

|

Z

=

Z

S

L

= 50

Ω

-

1/2

)

2.5

16 10

12.5

6.5

-

Semiconductor Group 3 Dec-13-1996

SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :

Transistor Chip Data

BFP 196

IS = 1.7264 fA VAF = 20 V NE = 1.1766 VAR = 3.8128 V NC = 0.88299 RBM = 1

Ω

CJE = 13.325 fF TF = 23.994 ps ITF = 1.9775 mA VJC = 0.73057 V TR = 2.2413 ns MJS = 0XTI = 3-

BF = 125 IKF = 0.4294 A BR = 10.584 IKR = 0.019511 A RB = 1.2907 RE = 0.75103 VJE = 0.7308 V XTF = 0.44322 PTF = 0 deg MJC = 0.3289 CJS = 0 fF XTB = 0 FC = 0.50922 -

Ω Ω

NF = 0.80012 ISE = 119.22 fA NR = 0.94288 ISC = 4.8666 fA IRB = 0.084011 mA RC = 0.27137

Ω

MJE = 0.33018 VTF = 0.1 V CJC = 1667 fF XCJC = 0.29998 VJS = 0.75 V EG = 1.11 eV TNOM 300 K

Package Equivalent Circuit:

LBI = 0.84 nH LBO = 0.65 nH LEI = 0.31 nH LEO = 0.14 nH LCI = 0.07 nH LCO = 0.42 nH CBE = 145 fF CCB = 19 fF CCE = 281 fF

Valid up to 6 GHz

For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 4 Dec-13-1996

BFP 196

Total power dissipation

* Package mounted on epoxy

800

mW

P

tot

600

500

400

300

200

100

P

= f (

T

*,

T

tot

T

A

T

S

)

S

0

0 20 40 60 80 100 120 °C 150

Permissible Pulse Load

3

10

K/W

R

thJS

2

10

1

10

R

thJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005 D = 0

= f (

t

TA,T

)

p

S

Permissible Pulse Load

P

totmax

/

P

totDC

= f (

t

)

p

2

10

P

/

P

totDC

10

- D = 0

0.005

0.01

0.02

1

0.05

0.1

0.2

0.5

totmax

10

0

10

-7

-6

-5

-4

-3

-2

-1

10

t

0

10

s

p

10

0

10

-7

-6

-5

-4

-3

-2

-1

10

t

0

10

s

p

Semiconductor Group 5 Dec-13-1996

BFP 196

Collector-base capacitance

V

=

v

BE

C

cb

= 0, f = 1MHz

be

1.8

pF

1.4

1.2

1.0

0.8

0.6

0.4

0.2

C

cb

= f (

V

CB

)

Transition frequency

V

= Parameter

CE

8.0

GHz

f

T

6.0

5.0

4.0

3.0

2.0

1.0

f

T

= f (

I

10V

)

C

5V 3V

2V

1V

0.7V

0.0 0 4 8 12 16 V 22

Power Gain

f

= 0.9GHz

V

= Parameter

CE

18

dB

G

14

12

10

8

6

0 20 40 60 80 mA 120

G

ma

,

G

ms

= f(

I

C

10V

0.0

V

R

)

5V 3V

2V

1V

0.7V

I

C

Power Gain

f

= 1.8GHz

V

CE

G

0 20 40 60 80 mA 120

G

,

G

= f(

I

ma

ms

)

C

= Parameter

10

dB

8

7

6

5

4

3

2

1 0

0 20 40 60 80 mA 120

10V

I

C

5V 3V

2V

1V

0.7V

I

C

Semiconductor Group

6 Dec-13-1996

BFP 196

Power Gain

G

ma

|

f

= Parameter

18

I

=50mA

C

dB

G

14

12

10

8

6

4

2

0

0 2 4 6 8 V 12

,

G

= f(

V

S

ms

21

|2 = f(

CE

V

CE

):_____

):---------

0.9GHz

1.8GHz

\undefined &SYMBOPL.VCE\

Intermodulation Intercept Point

(3rd order, Output,

V

= Parameter, f = 900MHz

CE

36

dBm

32

IP

3

30 28 26 24 22 20 18 16 14

12

0 20 40 60 80 100 mA 130

ZS

=

Z

1V

L

=50Ω)

3V

2V

IP

8V

3

=f(

5V

I

C

I

)

C

Power Gain

V

= Parameter

CE

32

I

=50mA

C

dB

G

24

20

16

12

8

4

0

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

G

ma

,

G

ms

= f(f)

10V

2V 1V

0.7V

f

Power Gain |

V

= Parameter

CE

32

I

=50mA

C

dB

S

21

24

20

16

12

8

4

0

-4

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

S

|2= f(f)

21

10V

2V 1V

0.7V

f

Semiconductor Group

7 Dec-13-1996