Datasheet BFG10-X, BFG10 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFG10; BFG10/X

NPN 2 GHz RF power transistor

Product specification
Supersedes data of 1995 Mar 07
File under Discrete Semiconductors, SC14

1995 Aug 31

Philips Semiconductors Product specification

NPN 2 GHz RF power transistor BFG10; BFG10/X

FEATURES

• High power gain

• High efficiency

• Small size discrete power amplifier

• 1.9 GHz operating area

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.

DESCRIPTION

NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.

PINNING

PIN DESCRIPTION

BFG10 (see Fig.1)

1 collector
2 base
3 emitter
4 emitter

BFG10/X (see Fig.1)

1 collector
2 emitter
3 base
4 emitter

MARKING

TYPE NUMBER CODE

BFG10 N70
BFG10/X N71

handbook, 2 columns

12

Top view

Fig.1 SOT143.

34

MSB014

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common-emitter test circuit (see Fig.7).

amb

f

(GHz)

V

(V)

CE

P

L

(mW)

G

(dB)

p

η

(%)

Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 200 ≥5 ≥50

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 250 mA
average collector current − 250 mA
total power dissipation up to Ts=60°C; see Fig.2; note 1 − 400 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

Note

is the temperature at the soldering point of the collector pin.

1. T

s

c

1995 Aug 31 2

Philips Semiconductors Product specification

NPN 2 GHz RF power transistor BFG10; BFG10/X

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to
soldering point

Note

is the temperature at the soldering point of the collector pin.

1. T

s

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

collector-base breakdown voltage open emitter; IC= 0.1 mA 20 − V
collector-emitter breakdown voltage open base; IC= 5 mA 8 − V
emitter-base breakdown voltage open collector; IE= 0.1 mA 2.5 − V
collector leakage current VCE=5V; VBE=0 − 100 µA
DC current gain IC= 50 mA; VCE=5V 25 −
collector capacitance IE=ie= 0; VCB= 3.6 V; f = 1 MHz − 3pF
feedback capacitance IC= 0; VCE= 3.6 V; f = 1 MHz − 2pF

up to Ts=60°C; note 1;
P

= 400 mW

tot

290 K/W

500

handbook, halfpage

P

tot

(mW)

400

300

200

100

0

0 50 100 200

150

Fig.2 Power derating curve

MLC818

o

T ( C)

s

2.0

handbook, halfpage

C

c

(pF)

1.5

1.0

0.5

0

01048

IC= 0; f= 1 MHz.

2

6

Fig.3 Collector capacitance as a function of

collector-base voltage; typical values.

MLC819

VCB(V)

1995 Aug 31 3

Philips Semiconductors Product specification

NPN 2 GHz RF power transistor BFG10; BFG10/X

APPLICATION INFORMATION

RF performance at T

=25°C in a common-emitter test circuit (see Fig.7).

amb

MODE OF OPERATION

f

(GHz)

Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 1 200

V

(V)

CE

I

CQ

(mA)

P

L

(mW)

G

(dB)

p

η

(%)

c

>5 >50

typ. 7 typ. 60

Ruggedness in class-AB operation

The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.

10

handbook, halfpage

G

p

(dB)

8

6

4

2

MLC820

100

η

η

c

G

p

c

(%)

80

60

40

20

500

handbook, halfpage

P

L

(mW)

400

300

200

100

MLC821

0

Pulsed, class-AB operation.
VCE= 3.6 V; VBE= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL= 200 mW.

100 200 300 400

0 500

P (mW)

L

Fig.4 Power gain and efficiency as functions

of load power; typical values.

0

0

0 50 100 150

Pulsed, class-AB operation.
VCE= 3.6 V; VBE= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL= 200 mW.

P (mW)

D

Fig.5 Load power as a function of drive

power; typical values.

1995 Aug 31 4

Philips Semiconductors Product specification

NPN 2 GHz RF power transistor BFG10; BFG10/X

SPICE parameters for the BFG10 crystal

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 2.714 fA
2 BF 102.8 −
3 NF 0.998 −
4 VAF 28.12 V
5 IKF 6.009 A
6 ISE 403.2 pA
7 NE 2.937 −
8 BR 31.01 −
9 NR 0.999 −
10 VAR 2.889 V
11 IKR 0.284 A
12 ISC 1.487 fA
13 NC 1.100 −
14 RB 3.500 Ω
15 IRB 1.000 µA
16 RBM 3.500 Ω
17 RE 0.217 Ω
18 RC 0.196 Ω

(1)

19
20
21

(1)
(1)

XTB 0.000 −
EG 1.110 eV

XTI 3.000 −
22 CJE 5.125 pF
23 VJE 0.600 V
24 MJE 0.367 −
25 TF 12.07 ps
26 XTF 99.40 −
27 VTF 7.220 V
28 ITF 3.950 A
29 PTF 0.000 deg
30 CJC 2.327 pF
31 VJC 0.668 V
32 MJC 0.398 −
33 XCJC 0.160 −

(1)

34
35
36
37

(1)
(1)
(1)

TR 0.000 ns

CJS 0.000 F

VJS 750.0 mV

MJS 0.000 −
38 FC 0.652 −

handbook, halfpage

L1 L2

B

C

QLB= 50; QLE= 50; QL

= scaling frequency = 100 MHz.

f

c

L

be ce

Fig.6 Package equivalent circuit SOT143.

List of components (see Fig.6)

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

L1 0.12 nH
L2 0.21 nH
L3 0.06 nH
L

B

L

E

C

cb

B

E'

L

L3

E

(f)=QL

B,E

B,E

√(f/fc);

84 fF
17 fF
191 fF

0.95 nH

0.40 nH

CB' C'

C

E

MBC964

Note

1. These parameters have not been extracted,
the default values are shown.

1995 Aug 31 5

Philips Semiconductors Product specification

NPN 2 GHz RF power transistor BFG10; BFG10/X

Test circuit information

handbook, full pagewidth

50 Ω
input

R2

C1

R1 T1

L10

L9

L1

L8

L2

C2, C3,

C4, C5

C14, C15,

C16

C11

C10

DUT

V

S

C12 C13

L7

L6

L4

L3 L5

C6, C7,

C8

C9

MLC822

50 Ω

output

V

bias

Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz.

1995 Aug 31 6

Philips Semiconductors Product specification

NPN 2 GHz RF power transistor BFG10; BFG10/X

List of components used in test circuit (see Fig.7)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C9, C10, C11 multilayer ceramic chip capacitor; note 1 24 pF
C2, C3, C4, C5,

C6, C7
C8 multilayer ceramic chip capacitor; note 1 1.1 pF
C12, C13 electrolytic capacitor 470 µF; 10 V 2222 031 34471
C14, C15, C16 multilayer ceramic chip capacitor; note 1 10 nF
L1 stripline; note 2 length 28.5 mm

L2 stripline; note 2 length 2.3 mm

L3 stripline; note 2 length 3.1 mm

L4 stripline; note 2 length 3.3 mm

L5 stripline; note 2 length 16.3 mm

L6 stripline; note 2 length 10 mm

L7 stripline; note 2 length 4.4 mm

L8 stripline; note 2 length 19.3 mm

L9 stripline; note 2 length 19.7 mm

L10 micro choke
T1 BD228
R1 metal film resistor 20 Ω; 0.4 W 2322 157 10209
R2 metal film resistor 530 Ω; 0.4 W 2322 157 15301

multilayer ceramic chip capacitor; note 1 0.86 pF

width 0.93 mm

width 0.93 mm

width 0.93 mm

width 0.93 mm

width 0.93 mm

width 0.93 mm

width 0.4 mm

width 0.93 mm

width 0.4 mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

1

2. The striplines are on a

1995 Aug 31 7

⁄32inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr= 6).

Philips Semiconductors Product specification

NPN 2 GHz RF power transistor BFG10; BFG10/X

handbook, full pagewidth

60

C6

C7 C8

Collector

C15

C16

Collector

L5

C12

C13

C9

MLC823

V

S

Base

V

bias

C1

T1

R2

L10

R1

L9

L1

C11

C2

Base

70

C14

L8

C3

L2 L3

C4

L7

C5

C10

L6

L4

Dimensions in mm.
The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and

serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.

Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7.

1995 Aug 31 8

Philips Semiconductors Product specification

NPN 2 GHz RF power transistor BFG10; BFG10/X

PACKAGE OUTLINE

handbook, full pagewidth

Dimensions in mm.

10

max

3.0

0.150

30

max

0.090

0.1

max

max

o

o

10

0.88

0.75

0.60

o

1.1

max

2.8

1.9

43

1

2

0

0.1

TOP VIEW

0.48

1.7

0

0.1

B

A

1.4

1.2

M0.1 AB

2.5

max

0.2

MBC845

M

AB

Fig.9 SOT143.

1995 Aug 31 9

Philips Semiconductors Product specification

NPN 2 GHz RF power transistor BFG10; BFG10/X

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Aug 31 10