Datasheet BFC520 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFC520

NPN wideband cascode transistor

Product specification
Supersedes data of 1996 Oct 08
File under Discrete Semiconductors, SC14

1997 Sep 10

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC520

FEATURES

• Small size

• High power gain at low bias current and high

frequencies

• High reverse isolation

• Low noise figure

• Gold metallization ensures excellent reliability

• Minimum operating voltage V

C2−E1

=1V.

APPLICATIONS

• Low noise, high gain amplifiers

• Oscillator buffer amplifiers

• Wideband voltage-to-current converters.

DESCRIPTION

Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and cordless phones and has
a very low feedback capacitance resulting in high isolation.

PINNING - SOT353

SYMBOL PIN DESCRIPTION

b

2

e

1

b

1

c

1/e2

c

2

handbook, halfpage

Top view

1 base 2
2 emitter 1
3 base 1
4 collector 1/emitter 2
5 collector 2

5

4

31

2

c

2

b

2

c1/e

b

1

e

1

MAM212

Fig.1 Simplified outline and symbol.

2

QUICK REFERENCE DATA

V

= 3 V; IC= 20 mA; VB2= 2.1 V; b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to

C2−E1

ground.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

re

s21s12⁄

MSG maximum stable power gain

F noise figure I
R

th j-s

feedback capacitance C
maximum isolation f = 900 MHz; T

2

B1−C2

f = 2 GHz; T
f = 900 MHz; T

(narrowband)

thermal resistance from
junction to soldering point

f = 2 GHz; T

= 5 mA; f = 900 MHz; ΓS= Γ

C

single loaded −−230 K/W
double loaded −−115 K/W

−−10 fF

=25°C −−63 − dB

amb

=25°C −−38 − dB

amb

=25°C − 31 − dB

amb

=25°C − 19 − dB

amb

opt

− 1.3 1.6 dB

1997 Sep 10 2

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC520

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Any single transistor

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
DC collector current − 70 mA
total power dissipation up to Ts=60°C; note 1 − 1W
storage temperature −65 +175 °C
junction temperature − 175 °C

thermal resistance from junction
to soldering point; note 1

single loaded 230 K/W
double loaded 115 K/W

Note to the Limiting values and Thermal characteristics

is the temperature at the soldering point of the collector pin.

1. T

s

1997 Sep 10 3

Philips Semiconductors Product specification





NPN wideband cascode transistor BFC520

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC characteristics of any single transistor

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

AC characteristics of the cascode configuration

f

T

C

c

C

re2

C

re

MSG maximum stable power gain; note 1 I

2

s

21

s21s12⁄

F noise figure I

IP

3

collector-base breakdown voltage IC= 2.5 µA; IE=0 20 −−V
collector-emitter breakdown voltage IC=10µA; IB=0 8 −−V
emitter-base breakdown voltage IE= 2.5 µA; IC= 0 2.5 −−V
collector-base leakage current IE= 0; VCB=6V −−50 nA
DC current gain IC= 20 mA; VCE= 6 V 60 120 250

transition frequency IC= 20 mA; V

C2-E1

=3V;

− 7 − GHz

f = 1 GHz

collector capacitance T2 IE=ie= 0; V

C2-B2

=1V;

− 0.55 − pF

f = 1 MHz
feedback capacitance T2 IC= 0; V
feedback capacitance IC= 0; V

= 20 mA; V

C

f = 900 MHz; T

= 20 mA; V

I

C

f = 2 GHz; T
insertion power gain I

= 20 mA; V

C

f = 900 MHz; T

I

= 20 mA; V

C

f = 2 GHz; T
maximum isolation; note 2 f = 900 MHz − 63 − dB

2

=3V;f=1MHz − 500 − fF

C2-E1

=3V;f=1MHz −−10 fF

C2-E1

C2-E1

C2-E1

amb

C2-E1

C2-E1

amb

=3V;

=25°C

amb

=3V;

=25°C

=3V;

=25°C

amb

=3V;

=25°C

− 31 − dB

− 19 − dB

− 17 − dB

− 13 − dB

f = 2 GHz − 38 − dB

= 5 mA; V

C

f = 900 MHz; ΓS= Γ

C2-E1

=3V;

opt

− 1.3 1.6 dB

third order intercept point (input) note 3 −−18 − dBm

Notes

1. MSG =

s12s21⁄ kk21––

×



1s

k

=

-----------------------------------------------------------------------------------------------------------------

2. Maximum isolation is defined as the isolation when S

3. IC=5 mA; VCE= 3 V; RS=50Ω; ZL= opt; T
fp= 900 MHz; fq= 902 MHz; measured at f

11s22

amb

(2p−q)

× s12s21×–

21

=25°C;

= 904 MHz.

1997 Sep 10 4

2s

12s21

2

–+

2

s



11

××

2

s

–

22

of the amplifier is reduced to unity (buffer application).

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC520

150

Ts (

MBG228

o

C)

1.5

handbook, halfpage

P

tot

(mW)

double loaded

1

single loaded

0.5

0

0 50 100 200

Fig.2 Power derating as a function of soldering

point temperature; typical values.

12

handbook, halfpage

f

T

(GHz)

8

4

0

110

f =1 GHz; T

amb

=25°C.

V

C2-E1 = 12 V

IC (mA)

Fig.3 Transition frequency as a function of

collector current; typical values.

MBG219

9 V

6 V

3 V

2

10

V

C2-E1

F

(dB)

4

3

2

1

0

−1

10

=3V.

I

= 2 mA

C

10 mA

110

f (GHz)

handbook, halfpage

Fig.4 Minimum noise figure as a function of

frequency; typical values.

MGG219

handbook, halfpage

3

F

(dB)

2

1

0

110

V

=3V.

C2-E1

f = 900 MHz

500 MHz

10

I

(mA)

C

Fig.5 Minimum noise figure as a function of

collector current; typical values.

MGG220

2

1997 Sep 10 5

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC520

60

handbook, halfpage

MSG

(dB)

40

20

0

−2

10

V

=3V.

C2-E1

I

=

C

5 mA
2 mA

1 mA

−1

10

110

f (GHz)

Fig.6 Maximum stable gain as a function of

frequency; typical values.

MGG221

120

S21/S

(dB)

80

40

0

2 GHz

IC (mA)

MGG222

10

100
S21/S

(dB)

80

60

40

20

2

12

50

handbook, halfpage

12

MSG

(dB)

V

C2-E1

40

30

20

10

10

−1

=3V.

f = 500 MHz

900 MHz

110

Fig.7 Maximum stable gain and isolation as

functions of collector current; typical values.

30

handbook, halfpage

S

21

(dB)

20

10

0

−1

10

V

= 3 V; RS=50Ω; XS=XL= opt; f = 900 MHz.

C2-E1

11010

R

= 220 Ω

L

50 Ω

IC (mA)

Fig.8 Insertion gain as a function of collector

current; typical values.

MGG223

2

10

handbook, halfpage

IP

3

(dBm)

0

−10

−20

−30

−1

10

Point tuned for maximum gain with double slug tuners.
V

= 3 V; f = 900 MHz.

C2-E1

11010

MGG224

output

input

IC (mA)

Fig.9 Third order intercept point as a function of

collector current; typical values.

2

1997 Sep 10 6

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC520

APPLICATION INFORMATION
SPICE parameters for any single BFC520 die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 1.016 fA
2 BF 220.1 −
3 NF 1.000 −
4 VAF 48.06 V
5 IKF 510.0 mA
6 ISE 283.0 fA
7 NE 2.035 −
8 BR 100.7 −
9 NR 0.988 −
10 VAR 1.692 V
11 IKR 2.352 mA
12 ISC 24.48 aA
13 NC 1.022 −
14 RB 10.00 Ω
15 IRB 1.000 µA
16 RBM 10.00 Ω
17 RE 775.3 mΩ
18 RC 2.210 Ω
19
20
21

(1)
(1)
(1)

XTB 0.000 −
EG 1.110 eV

XTI 3.000 −
22 CJE 1.245 pF
23 VJE 600.0 mV
24 MJE 0.258 −
25 TF 8.616 ps
26 XTF 6.788 −
27 VTF 1.414 V
28 ITF 110.3 mA
29 PTF 45.01 deg
30 CJC 447.6 fF
31 VJC 189.2 mV
32 MJC 0.071 −
33 XCJC 0.130 −
34 TR 543.7 ps

(1)

35
36
37

(1)
(1)

CJS 0.000 F

VJS 750.0 mV

MJS 0.000 −
38 FC 0.780 −

handbook, halfpage

B2

B1

LP

LP LB1

LB2

LP

T2

LE2

LP

T1

LE1

Fig.10 Package equivalent circuit SOT353A

(inductance only).

Lead and mutual inductances (nH)

LP

LB1,2

LE1,2

C1/E2

0.4

0.5

0.8

35E1

B2

3.5 35

C2

2

35

36 35 23615

B1 E1 B2 C2

M(LB1,LE1)

M(LB1,LE2)

C2

C1/E2

LP

MBG217

E1

MBG216

+0.4

+0.25

Note

1. These parameters have not been extracted, the
default values are shown.

1997 Sep 10 7

Fig.11 Package capacitance (fF) between

indicated nodes.

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC520

Typical application circuits

+V

dbook, full pagewidth

CC

R1 increases stability (10 to 47 Ω).

handbook, full pagewidth

RF input

R1

MBG226

Fig.12 Narrowband amplifier.

+V

CC

RF output

E1

V

tune

T1 forms a colpitts oscillator.
T2 acts as a buffer amplifier.

Fig.13 VCO/buffer combination.

1997 Sep 10 8

RF output

T2

T1

E1

MBG227

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC520

PACKAGE OUTLINE

Plastic surface mounted package; 5 leads SOT353

D

y

45

132

e

1

e

b

p

wBM

A

A

1

E

H

E

detail X

Q

L

p

AB

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

A

1.1

0.8

OUTLINE
VERSION

SOT353

max

0.1

1

b

cD

p

0.30

0.20

IEC JEDEC EIAJ

0.25

0.10

2.2

1.8

(2)

E

1.35

1.3

1.15

REFERENCES

e

e

1

0.65

1997 Sep 10 9

H

2.2

2.0

L

Qywv

p

E

0.45

0.15

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28SC-88A

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC520

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Sep 10 10

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC520

NOTES

1997 Sep 10 11

Philips Semiconductors – a worldwide company

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Tel. [phone], Fax. [phone]
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TEL AVIV 61180, Tel. [phone], Fax.[phone]
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Printed in The Netherlands 127127/00/03/pp12 Date of release: 1997 Sep 10 Document order number: 9397 750 02888