Datasheet BFC505 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFC505

NPN wideband cascode transistor

Product specification
Supersedes data of 1995 Sep 01
File under Discrete Semiconductors, SC14

1996 Oct 08

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

FEATURES

• Small size

• High power gain at low bias current and high

frequencies

• High reverse isolation

• Low noise figure

• Gold metallization ensures excellent reliability

• Minimum operating voltage V

C2−E1

=1V.

APPLICATIONS

• Low voltage, low current, low noise and high gain
amplifiers

• Oscillator buffer amplifiers

• Wideband voltage-to-current converters.

DESCRIPTION

Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and has a very low feedback
capacitance resulting in high isolation.

PINNING - SOT353

PIN SYMBOL DESCRIPTION

1b
2e
3b
4c

1

5c

handbook, halfpage

5

2

Top view

/e

base 2

2

emitter 1

1

base 1

1

collector 1/emitter 2

2

collector 2

2

4

31

b

2

b

1

Fig.1 Simplified outline and symbol.

c

e

2

1

c1/e

MAM212

2

QUICK REFERENCE DATA

b

connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground.

2

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

re

s21s12⁄

feedback capacitance C
maximum isolation I

2

B1−C2Ie

MSG maximum stable power gain I

F noise figure I

R

th j-s

thermal resistance from
junction to soldering point

= 0; V

= 5 mA; VC2=VB2=3V;

C

= 0; f = 1 MHz −−10 fF

C2-E1

60 −−dB

f = 900 MHz

= 0.5 mA; VC2=VB2=1V;

C

f = 900 MHz; T

= 0.5 mA; V

C

f = 500 MHz; ΓS= Γ

= 1 mA; V

I

C

f = 900 MHz; ΓS= Γ

amb

C2-E1

C2-E1

=25°C

=1V;

opt

=3V;

opt

− 22 − dB

− 1.1 1.4 dB

− 1.8 2.1 dB

single loaded −−230 K/W
double loaded −−115 K/W

1996 Oct 08 2

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Any single transistor

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
DC collector current − 18 mA
total power dissipation up to Ts=118°C; note 1 − 500 mW
storage temperature −65 +175 °C
junction temperature − 175 °C

thermal resistance from junction
to soldering point; note 1

single loaded 230 K/W
double loaded 115 K/W

Note to the Limiting values and Thermal characteristics

1. T

is the temperature at the soldering point of the collector pin.

s

1996 Oct 08 3

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC characteristics of any single transistor

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

AC characteristics of the cascode configuration measured in test circuit (note 1)
f

T

C

c

C

re2

C

re

MSG maximum stable power gain;

2

s

21

s21s12⁄

F noise figure I

IP

3

collector-base breakdown voltage IC= 2.5 µA; IE=0 20 −−V
collector-emitter breakdown

IC=10µA; IB=0 8 −−V

voltage
emitter-base breakdown voltage IE= 2.5 µA; IC= 0 2.5 −−V
collector-base leakage current IE= 0; VCB=6V −−50 nA
DC current gain IC= 5 mA; VCE= 6 V 60 120 250

transition frequency IC= 5 mA; V
collector capacitance T2 IE=ie= 0; V
feedback capacitance T2 IC= 0; V
feedback capacitance IC= 0; V

I

= 0.25 mA; V

C

note 2

f = 300 MHz; T
I

= 0.5 mA; V

C

f = 900 MHz; T
I

= 5 mA; V

C

T

amb

insertion power gain I

= 0.5 mA; V

C

f = 300 MHz; T
I

= 5 mA; V

C

f = 900 MHz; T
I

= 5 mA; V

C

T

amb

maximum isolation; note 3 I

2

= 0.5 mA; V

C

C2-E1
C2-E1

=25°C

=25°C

= 3 V; f = 1 GHz − 7.3 − GHz

C2-E1

= 0; f = 1 MHz − 0.4 − pF

C2-B2

=3V;f=1MHz − 250 fF
=3V;f=1MHz −−10 fF

=1V;

C2-E1

=25°C

amb

=1V;

C2-E1

=25°C

amb

= 3 V; f = 2 GHz;

C2-E1

=3V;

C2-E1

=25°C

amb

=3V;

C2-E1

=25°C

amb

= 3 V; f = 2 GHz;

C2-E1

=1V;

C2-E1

− 25 − dB

− 22 − dB

− 23 − dB

− 21 − dB

− 16 − dB

− 11 − dB

40 45 − dB

f = 900 MHz
I

= 5 mA; V

C

C2-E1

=3V;

60 68 − dB

f = 900 MHz

= 5 mA; V

I

C

= 0.5 mA; V

C

f = 500 MHz; ΓS= Γ
I

= 1 mA; V

C

f = 900 MHz; ΓS= Γ

= 1 mA; V

I

C

f = 2 GHz; ΓS= Γ

= 3 V; f = 2 GHz 40 48 − dB

C2-E1

C2-E1

C2-E1

C2-E1

=1V;

opt

=3V;

opt

=1V;

opt

− 1.1 1.4 dB

− 1.8 2.1 dB

− 3.5 − dB

third order intercept point (input) note 4 −−20 − dBm

1996 Oct 08 4

Philips Semiconductors Product specification





NPN wideband cascode transistor BFC505

Notes

1. VB2=V

2. MSG = ;

3. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application).

4. IC= 1 mA; VCE= 3 V; RS=50Ω; ZL= opt; T

f

(2p−q)

/2 + 0.6 V

C2−E1

s12s21⁄ kk21––

× k



= 904 MHz.

1s

=

-----------------------------------------------------------------------------------------------------------------

× s12s21×–

11s22

2s

=25°C; fp= 900 MHz; fq= 902 MHz; measured at

amb

2

–+

s21××

12

2

s



–

11

2

s

22

150

Ts (

MBG208

o

C)

600

handbook, halfpage

P

tot

(mW)

400

200

0

0 50 100 200

double loaded

single loaded

Fig.2 Power derating as a function of soldering

point temperature; typical values.

12

handbook, halfpage

f

T

(GHz)

8

4

0

10

f =1 GHz; T

−1

amb

=25°C.

V

C2-E1 = 12 V

9 V

6 V

3 V

110

IC (mA)

Fig.3 Transition frequency as a function of

collector current; typical values.

MBG209

2

10

1996 Oct 08 5

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

handbook, halfpage

6

F

IC = 0.25 mA

(dB)

4

1 mA

2

0

−1

V

C2-E1

10

=1V.

1

f (GHz)

Fig.4 Minimum noise figure as a function of

frequency; typical values.

MGG213

MGG214

10

V

(dB)

C2-E1

F

6

4

2

0

−1

10

=1V.

f = 900 MHz

500 MHz

1

IC (mA)

handbook, halfpage

10

Fig.5 Minimum noise figure as a function of

collector current; typical values.

50

andbook, halfpage

MSG

(dB)

40

(1)

(2)

(3)

30

20

10

10 10

(1) IC= 5 mA; V
(2) IC= 1 mA; V
(3) IC= 0.5 mA; V

C2−E1
C2−E1

C2−E1

2

=3V.
=1V.

=1V.

3

10

f (MHz)

Fig.6 Maximum stable gain and isolation as

functions of frequency; typical values.

MGG215

MGG216

100

S21/S

80

60

(dB)

40

andbook, halfpage

12

MSG

(dB)

(1)

30

(2)

(3)

20

80

S21/S

(dB)

60

40

12

40

20

4

10

(1) V
(2) V
(3) V

10

−1

10

= 1 V; f = 500 MHz.

C2−E1

= 1 V; f = 900 MHz.

C2−E1

= 3 V; f = 2 GHz.

C2−E1

1

IC (mA)

20

10

Fig.7 Maximum stable gain and isolation as

functions of collector current; typical values.

1996 Oct 08 6

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

25

handbook, halfpage

gain
(dB)

20

15

10

5

0

−5

−1

10

VCE= 1 V; RS=50Ω; XS=XL= opt; f = 900MHz.

RL = 470 Ω

50 Ω

1

IC (mA)

MGG217

Fig.8 Transducer gain as a function of collector

current; typical values.

10

handbook, halfpage

IP

3

(dBm)

0

−10

−20

−30

10

Point tuned for maximum gain with double slug tuners; f = 900 MHz.
(1) IP3(output); V
(3) IP3(input); V

−1

10

=3V. (2) IP3(output); V

C2-E1

=3V. (4) IP3(input); V

C2-E1

(1)

(2)

(3)

(4)

110

I

MGG218

(mA)

C

=1V.

C2-E1

=1V.

C2-E1

Fig.9 Third order intercept point as a function of

collector current; typical values.

1996 Oct 08 7

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

APPLICATION INFORMATION
SPICE parameters for any single BFC505 die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 134.1 aA
2 BF 180.0 −
3 NF 0.988 −
4 VAF 38.34 V
5 IKF 150.0 mA
6 ISE 27.81 fA
7 NE 2.051 −
8 BR 55.19 −
9 NR 0.982 −
10 VAR 2.459 V
11 IKR 2.920 mA
12 ISC 17.45 aA
13 NC 1.062 −
14 RB 20.00 Ω
15 IRB 1.000 µA
16 RBM 20.00 Ω
17 RE 1.171 Ω
18 RC 4.350 Ω
19
20
21

(1)
(1)
(1)

XTB 0.000 −
EG 1.110 eV

XTI 3.000 −
22 CJE 284.7 fF
23 VJE 600.0 mV
24 MJE 0.303 −
25 TF 7.037 ps
26 XTF 12.34 −
27 VTF 1.701 V
28 ITF 30.64 mA
29 PTF 0.000 deg
30 CJC 242.4 fF
31 VJC 188.6 mV
32 MJC 0.041 −
33 XCJC 0.130 −
34 TR 1.332 ns

(1)

35
36
37

(1)
(1)

CJS 0.000 F

VJS 750.0 mV

MJS 0.000 −
38 FC 0.897 −

handbook, halfpage

B2

B1

LP

LP LB1

LB2

LP

T2

LE2

LP

T1

LE1

Fig.10 Package equivalent circuit SOT353A

(inductance only).

Lead and mutual inductances (nH)

LP

LB1,2

LE1,2

C1/E2

0.4

0.5

0.8

35E1

B2

3.5 35

C2

2

35

36 35 23615

B1 E1 B2 C2

M(LB1,LE1)

M(LB1,LE2)

C2

C1/E2

LP

MBG217

E1

MBG216

+0.4

+0.25

Note

1. These parameters have not been extracted, the
default values are shown.

1996 Oct 08 8

Fig.11 Package capacitance (fF) between

indicated nodes.

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

Typical application circuits

handbook, full pagewidth

RS increases stability.

RF input

(50 Ω)

CD

RB1

CB

RB2

C2C1

C

inLin

RB3

RE

Fig.12 Narrowband amplifier.

RS

L

out

C

par

CE

MBG218

+V

CC

RP

C3

C

out

RF output
(50 Ω)

C4

handbook, full pagewidth

E1

V

tune

T1 forms a colpitts oscillator.
T2 acts as a buffer amplifier.

Fig.13 VCO/buffer combination.

1996 Oct 08 9

T2

T1

E1

MBG227

+V

CC

RF output

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

PACKAGE OUTLINE

handbook, full pagewidth

Dimensions in mm.

1.0

0.8

0.2

0.8

0.6

0.65

0.65

MSA365

0.1

0.0

A

1

2

3

Fig.14 SOT353.

1.35

1.15

2.2

2.0

0.3

0.1

0.17

0.10

0.2

M

B

B

5

0.25

2.2

0.15

1.8

(5x)

4

0.2

AM

1996 Oct 08 10

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Oct 08 11