Datasheet BF996S Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BF996S

N-channel dual-gate MOS-FET

Product specification
File under Discrete Semiconductors, SC07

April 1991

Philips Semiconductors Product specification

N-channel dual-gate MOS-FET BF996S

FEATURES

• Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.

APPLICATIONS

• RF applications such as:
– UHF television tuners
– Professional communication equipment.

PINNING

PIN SYMBOL DESCRIPTION

1 s, b source
2 d drain
3g
4g

gate 2

2

gate 1

1

QUICK REFERENCE DATA

DESCRIPTION

Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.

handbook, halfpage

Top view

Marking code: MHp.

43

21

MAM039

g

2

g

1

d

s,b

Fig.1 Simplified outline (SOT143) and symbol.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

DS

I

D

P

tot

T

j

Y

fs

C

ig-1s

C

rs

F noise figure f = 200 MHz G

drain-source voltage − 20 V
drain current − 30 mA
total power dissipation up to T

=60°C − 200 mW

amb

junction temperature − 150 °C
transfer admittance f = 1 kHz; I
input capacitance at gate 1 f = 1 MHz; ID= 10 mA; VDS= 15 V; V
feedback capacitance f = 1 MHz; ID= 10 mA; VDS= 15 V; V

ID= 10 mA; VDS=15V; V

= 10 mA; VDS=15V; V

D

= 2 mS; BS=B

S

=4V

GS−2

Sopt

=4V 18 − mS

G2−S

= 4 V 2.3 2.6 pF

G2−S

=4V 25 − fF

G2−S

;

1 − dB

April 1991 2

Philips Semiconductors Product specification

N-channel dual-gate MOS-FET BF996S

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

I

D

I

D(AV)

I

G1-S

I

G1-S

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

drain-source voltage − 20 V
drain current (DC) − 30 mA
average drain current − 30 mA
gate 1 source −±10 mA
gate 2 source −±10 mA
total power dissipation up to T

=60°C; note 1 − 200 mW

amb

storage temperature range −65 +150 °C
junction temperature − 150 °C

thermal resistance from junction to ambient in free air; note 1 460 K/W

Note to the Limiting values and the Thermal characteristics

1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.

200

handbook, halfpage

P

tot

(mW)

100

0

0 200

100

T

amb

MGE792

(°C)

Fig.2 Power derating curve.

April 1991 3

Philips Semiconductors Product specification

N-channel dual-gate MOS-FET BF996S

STATIC CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

G1−SS

I

G2−SS

V

(BR)G1-SS

V

(BR)G2-SS

I

DSS

V

(P)G1-S

V

(P)G2-S

gate cut-off current V
gate cut-off current V
gate-source breakdown voltage I
gate-source breakdown voltage I
drain current VDS=15V; V
gate-source cut-off current ID=20µA; VDS= 15 V; V
gate-source cut-off current ID=20µA; VDS= 15 V; V

DYNAMIC CHARACTERISTICS

Measuring conditions (common source): I

= 10 mA; VDS=15V; V

D

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C
C
C
C

Y

ig1-s
ig2-s
rs
os

fs

transfer admittance f = 1 kHz 15 18 − mS
input capacitance at gate 1 f = 1 MHz − 2.3 2.6 pF
input capacitance at gate 2 f = 1 MHz − 1.2 − pF
feedback capacitance f = 1 MHz − 25 − fF
output capacitance f = 1 MHz − 0.8 − pF

F noise figure f = 200 MHz; G

f = 800 MHz; G

G

P

power gain f = 200 MHz; GS= 2 mS; BS=B

GL= 0.5 mS; BL=B
f = 800 MHz; G

BS=B

= ±5 V; V

G1-S

= ±5 V; V

G2-S

= ±10 mA; V

G1-S

= ±10 mA; V

G2-S

G1-S

= 2 mS; BS=B

S

= 3.3 mS; BS=B

S

= 3.3 mS;

S

; GL= 1 mS; BL=B

Sopt

G2-S=VDS
G1-S=VDS

G2-S=VDS
G1-S=VDS

= 0; V

=4V; T

G2-S

Lopt

=0 −±50 nA
=0 −±50 nA

=0 ±6 ±20 V
=0 ±6 ±20 V

=4V 4 20 mA

G2-S

=4V −−2.5 V

G2-S

=0 −−2V

G1-S

=25°C.

amb

Sopt

Sopt

− 1 − dB

− 1.8 − dB

Sopt

;

− 25 − dB

− 18 − dB

Lopt

April 1991 4

Philips Semiconductors Product specification

N-channel dual-gate MOS-FET BF996S

PACKAGE OUTLINE

handbook, full pagewidth

Dimensions in mm.
See also

Soldering recommendations.

DEFINITIONS

10

max

3.0

0.150

30

max

0.090

0.1

max

max

o

o

10

0.88

0.75

0.60

o

1.1

max

2.8

1.9

43

1

2

0

0.1

TOP VIEW

0.48

1.7

0

0.1

B

A

1.4

1.2

M0.1 AB

2.5

max

0.2

MBC845

M

AB

Fig.3 SOT143.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

April 1991 5