Datasheet BF995 Datasheet (Siemens)

Silicon N Channel MOSFET Tetrode BF 995

● For input and mixer stages in FM and

VHF TV tuners

Type Marking

Ordering Code
(tape and reel)

BF 995 Q62702-F936MB SOT-143

Pin Configuration

1 2 3 4

S D G2 G1

Package

Maximum Ratings
Parameter Symbol Values Unit

Drain-source voltage V

DS 20 V

mADrain current ID 30

Gate 1/gate 2 peak source current

± IG1/2SM 10

Total power dissipation, TS < 76 ˚C Ptot 200 mW
Storage temperature range T

stg – 55 … + 150 ˚C

Channel temperature Tch 150

Thermal Resistance

Junction - soldering point Rth JS < 370 K/W

1)

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1

07.94

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

DC Characteristics

BF 995

UnitValuesParameter Symbol

min. typ. max.

D = 10 µA, – VG1S = – VG2S = 4 V

I

Gate 1 source breakdown voltage

± IG1S = 10 mA, VG2S = VDS = 0

Gate 2 source breakdown voltage

± IG2S = 10 mA, VG1S = VDS = 0

± VG1S = 5 V, VG2S = VDS = 0

Gate 2 source leakage current

± VG2S = 5 V, VG1S = VDS = 0

DS = 15 V, VG1S = 0, VG2S = 4 V

V

DS = 15 V, VG2S = 4 V, ID = 20 µA

V

Gate 2 source pinch-off voltage

DS = 15 V, VG1S = 0, ID = 20 µA

V

V

(BR) DS 20 – –

± V(BR) G1SS 8.5 – 14

± V(BR) G2SS 8.5 – 14

± IG1SS ––50

± IG2SS ––50

I

DSS 4–20

– V

G1S (p) – – 2.5

– V

G2S (p) – – 2.0

VDrain-source breakdown voltage

nAGate 1 source leakage current

mADrain current

VGate 1 source pinch-off voltage

Semiconductor Group 2

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BF 995

Parameter Symbol

AC Characteristics

g

fs 12 17 –

DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz

V

C

g1ss – 3.6 –

DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

V

C

Gate 2 input capacitance

DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

V

DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

V

DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

V

g2ss – 1.6 –

C

dg1 –25–

C

dss – 1.6 –

Gps –23–

DS = 15 V, ID = 10 mA

V

f = 200 MHz, G

∆f = 12 MHz

2

G = 2 mS, GL = 0.5 mS

(see test circuit 1)

UnitValues

min. typ. max.

mSForward transconductance

pFGate 1 input capacitance

fFFeedback capacitance

pFOutput capacitance

dBPower gain

Noise figure

DS = 15 V, ID = 10 mA

V

f = 200 MHz, G

G = 2 mS, GL = 0.5 mS

(see test circuit 1)
Gain control range

DS = 15 V, VG2S = 4 … – 2 V, f = 200 MHz

V

(see test circuit 1)
Mixer gain (additive)

DS = 15 V, VG2S = 6 V, RS = 220 Ω

V

f = 200 MHz, f

∆fIF = 5 MHz, Vosc = 0.5 V

2

IF = 36 MHz

(see test circuit 2)
Mixer gain (multiplicative)

V

DS = 15 V, VG1S = 1.7 V, VG2S = 2.5 V
S = 220 Ω, f = 200 MHz, fIF = 36 MHz

R

∆fIF = 5 MHz, Vosc = 2 V

2
(see test circuit 3)

F – 1.1 –

∆Gps –50–

Gpsc –16–

psc –18–

G

Semiconductor Group 3

BF 995

Total power dissipation Ptot = f (TA)

Output characteristics ID = f (VDS)

G2S = 4 V

V

Gate 1 forward transconductance

g

fs1 = f (VG1S)

DS = 15 V, IDSS = 10 mA, f = 1 kHz

V

Gate 1 forward transconductance

fs1 = f (VG2S)

g

DS = 15 V, IDSS = 10 mA, f = 1 kHz

V

Semiconductor Group 4

BF 995

Drain current ID = f (VG1S)

DS = 15 V

V

Gate 1 input capacitance Cg1ss = f (VG1S)

G2S = 4 V, VDS = 15 V

V

DSS = 10 mA, f = 1 MHz

I

Gate 2 input capacitance C

G1S = 0 V, VDS = 15 V

V

DSS = 10 mA, f = 1 MHz

I

g2ss = f (VG2S)

Output capacitance C

G1S = 0 V, VG2S = 4 V

V

DSS = 10 mA, f = 1 MHz

I

dss = f (VDS)

Semiconductor Group 5

BF 995

Gate 1 input admittance y11s

VDS = 15 V, VG2S = 4 V

(common source)

Gate 1 forward transfer admittance y21s

VDS = 15 V, VG2S = 4 V

(common source)

Output admittance y

VDS = 15 V, VG2S = 4 V

(common source)

22s

Semiconductor Group 6

BF 995

Power gain Gps = f (VG2S)

VDS = 15 V, VG1S = 0 V, IDSS = 10 mA

f = 200 MHz (see test circuit 1)

Noise figure F = f (VG2S)

VDS = 15 V, VG1S = 0 V, IDSS = 10 mA

f = 200 MHz (see test circuit 1)

Interference voltage for 1% cross
modulation V

int (1%) = f (∆Gps)

1)

VDS = 15 V, VG1S = 0, f = 200 MHz

f int = 221 MHz (see test circuit 1)

Interference voltage for 1% cross
modulation V

int (1%) = f (fint)

1)

VDS = 15 V, VG2S = 4 V, VG1S = 0

f = 200 MHz (see test circuit 1)

1)

For footnote refer to the last page of this data sheet.

Semiconductor Group 7

BF 995

Mixer gain (additive) Gpsc = f (Vosc)

VD = 15 V, VG1S = 0, VG2S = 6 V
RS = 220 Ω, IDSS = 10 mA, f = 200 MHz

f IF = 36 MHz (see test circuit 2)

Mixer gain (additive) Gpsc = f (VG2S)

VD = 15 V, VG1S = 0, RS = 220 Ω
Vosc = 0.5 V, IDSS = 10 mA, f = 200 MHz

f IF = 36 MHz (see test circuit 2)

Mixer gain (additive) G

psc = f (RS)

VD = 15 V, VG1S = 0, VG2S = 6 V
Vosc = 0.5 V, f = 200 MHz

f

IF = 36 MHz (see test circuit 2)

Mixer gain (multiplicative) G

psc = f (VG2S)

VD = 15 V, VG1S = 1.7 V, RS = 200 Ω
IDSS = 10 mA, f = 200 MHz

f

IF = 36 MHz (see test circuit 3)

Semiconductor Group 8

Test circuit 1 for power gain, noise figure and cross modulation

f = 200 MHz, G

G = 2 mS, GL = 0.5 mS

BF 995

Test circuit 2 for mixer gain (additive)

f = 200 MHz, f

osc = 236 MHz, 2∆fIF = 5 MHz

Semiconductor Group 9

Test circuit 3 for mixer gain (multiplicative)

f = 200 MHz, f

osc = 236 MHz, 2∆fIF = 5 MHz

BF 995

1)

Vint (1%) is the rms value of half the emf (terminal voltage at matching) of a 100 % sine modulated TV carrier at

an internal generator resistance of 60 Ω, causing 1 % amplitude modulation on the active carrier.

Semiconductor Group 10