Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BF861A; BF861B; BF861C
N-channel junction FETs
Product specification
Supersedes data of 1995 Apr 14
File under Discrete Semiconductors, SC07
1997 Sep 04
Page 2
Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
FEATURES
• High transfer admittance
• Low input capacitance
• Low feedback capacitance
• Low noise.
APPLICATIONS
• Preamplifiers for AM tuners in car radios.
DESCRIPTION
N-channel symmetrical junction field effect transistors in a
SOT23 package.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 s source
2 d drain
3 g gate
QUICK REFERENCE DATA
handbook, halfpage
Marking codes:
BF861A: M33.
BF861B: M34.
BF861C: M35.
21
Top view
3
g
MAM036
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
d
s
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
DSS
DS
drain-source voltage (DC) − 25 V
drain current VGS= 0; VDS=8V
BF861A 2 6.5 mA
BF861B 6 15 mA
BF861C 12 25 mA
P
tot
forward transfer admittance VGS= 0; VDS=8V
y
fs
total power dissipation up to T
=25°C − 250 mW
amb
BF861A 12 20 mS
BF861B 16 25 mS
BF861C 20 30 mS
C
iss
C
rss
input capacitance f = 1 MHz − 10 pF
reverse transfer capacitance f = 1 MHz − 2.7 pF
1997 Sep 04 2
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Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
V
DGO
I
G
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
drain-source voltage (DC) − 25 V
gate-source voltage open drain − 25 V
drain-gate voltage (DC) open source − 25 V
forward gate current (DC) − 10 mA
total power dissipation up to T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
operating junction temperature − 150 °C
300
P
tot
(mW)
200
100
0
0 50 100 150
Fig.2 Power derating curve.
T
amb
MRC166
o
( C)
1997 Sep 04 3
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Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C; VDS= 8 V; VGS= 0; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
V
GSoff
V
GSS
I
DSS
I
GSS
y
forward transfer admittance
fs
g
os
C
iss
C
rss
V
/√B equivalent input noise voltage VGS= 0; f = 1 MHz − 1.5 − nV/√Hz
n
thermal resistance from junction to ambient; note 1 500 K/W
gate-source breakdown voltage IG= −1 µA −25 −−V
gate-source cut-off voltage ID=1µA
BF861A −0.2 −−1V
BF861B −0.5 −−1.5 V
BF861C −0.8 −−2V
gate-source forward voltage VDS= 0; IG=1mA −−1V
drain current
BF861A 2 − 6.5 mA
BF861B 6 − 15 mA
BF861C 12 − 25 mA
gate cut-off current VGS= −20 V; VDS=0 −−−1nA
BF861A 12 − 20 mS
BF861B 16 − 25 mS
BF861C 20 − 30 mS
common source output
conductance
BF861A −−200 µS
BF861B −−250 µS
BF861C −−300 µS
input capacitance f = 1 MHz −−10 pF
reverse transfer capacitance f = 1 MHz − 2.1 2.7 pF
1997 Sep 04 4
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Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
1.5
V (V)
GSoff
MBD461
30
I
DSS
(mA)
20
10
0
VDS=8V.
0
0.5 1 2
Fig.3 Drain current as a function of gate-source
cut-off voltage; typical values.
300
handbook, halfpage
g
os
(µS)
200
100
0
0
VDS=8V.
VGS=0.
525
10 15 20
I
DSS
Fig.4 Common-source output conductance as
a function of drain current; typical values.
MBD462
(mA)
30
handbook, halfpage
y
fs
(mS)
20
10
0
0
VDS=8V.
VGS=0.
525
10 15 20
Fig.5 Forward transfer admittance as a
function of drain current; typical values.
I
DSS
(mA)
MBD463
25
handbook, halfpage
y
fs
(mS)
20
BF861A
15
10
5
0
0 5 10 20
VDS=8V.
BF861B
Fig.6 Forward transfer admittance as a
function of drain current; typical values.
15
MBD464
BF861C
I (mA)
D
1997 Sep 04 5
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Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
handbook, halfpage
5
I
D
(mA)
4
3
2
1
0
10
BF861A
VDS=8V.
MBD465
0.8 0.6 0.4 0.2
V (V)
GS
Fig.7 Typical input characteristics.
handbook, halfpage
5
I
D
(mA)
4
3
2
1
0
010
BF861A
VDS=8V.
Fig.8 Typical output characteristics.
MBD466
VGS= 0 V
100 mV
200 mV
300 mV
2468
V (V)
DS
10
handbook, halfpage
I
D
(mA)
8
6
4
2
0
10
BF861B
VDS=8V.
MBD467
0.8 0.6 0.4 0.2
V (V)
GS
Fig.9 Typical input characteristics.
10
handbook, halfpage
I
D
(mA)
8
6
4
2
0
010
BF861B
VDS=8V.
Fig.10 Typical output characteristics.
MBD468
VGS= 0 V
100 mV
200 mV
300 mV
400 mV
500 mV
2468
V (V)
DS
1997 Sep 04 6
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Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
20
handbook, halfpage
I
D
(mA)
16
12
8
4
0
2.5 0
BF861C
VDS=8V.
Fig.11 Typical input characteristics.
2 1.5 1 0.5
MBD469
V (V)
GS
20
handbook, halfpage
I
D
(mA)
16
12
8
4
0
010
BF861C
VDS=8V.
Fig.12 Typical output characteristics.
MBD470
VGS= 0 V
200 mV
400 mV
600 mV
800 mV
1 V
2468
V (V)
DS
10
handbook, halfpage
C ,C
is
rs
(pF)
8
6
4
2
0
864 0
C
is
C
rs
2
VDS=8V.
f =1 MHz.
Fig.13 Input and reverse transfer capacitance
as functions of gate-source voltage;
typical values.
MBD471
V (V)
GS
2
10
handbook, halfpage
10
I
G
(nA)
1
1
10
2
10
3
10
4
10
5
10
VDS=8V.
Fig.14 Gate current as a function of
MBD472
ID= 10 mA
1 mA
0.1 mA
I
GSS
5 101520
V (V)
DG
drain-gate voltage; typical values.
250
1997 Sep 04 7
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Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
V / B
n
8
handbook, halfpage
(nV/ Hz)
6
4
2
0
10
12
10110
VDS=8V.
VGS=0.
Fig.15 Equivalent input noise as a function of
frequency; typical values.
10
MBD473
2
f (kHz)
10
MBD474
g ,b
is is
(mS)
2
10
b
10
is
g
is
1
1
10
3
10
2
10
f (MHz)
3
10
VDS=8V.
VGS=0.
T
=25°C.
amb
Fig.16 Common-source input
admittance; typical values.
2
10
handbook, halfpage
g ,b
rs rs
(mS)
10
b
1
1
10
2
10
10
rs
g
rs
2
10
f (MHz)
VDS=8V.
VGS=0.
T
=25°C.
amb
Fig.17 Common-source reverse admittance;
typical values.
MBD475
2
10
handbook, halfpage
g ,b
fs fs
(mS)
10
3
10
1
10
g
fs
b
fs
2
10
f (MHz)
MBD476
3
10
VDS=8V.
VGS=0.
T
=25°C.
amb
Fig.18 Common-source forward transfer
admittance; typical values.
1997 Sep 04 8
Page 9
Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
2
10
g ,b
os os
(mS)
10
b
os
1
g
os
1
10
VDS=8V.
VGS=0.
T
=25°C.
amb
10
2
10
f (MHz)
Fig.19 Common-source output admittance;
typical values.
MBD477
3
10
1997 Sep 04 9
Page 10
Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
PACKAGE OUTLINE
3.0
handbook, full pagewidth
0.55
0.45
0.150
0.090
2.8
1.9
0.95
21
B
A
M
A
0.2
Dimensions in mm.
10
max
30
max
0.1
max
max
o
2.5
1.4
max
o
10
3
0.48
0.38
TOP VIEW
1.2
M0.1 AB
MBC846
o
1.1
max
Fig.20 SOT23.
1997 Sep 04 10
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Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 04 11
Page 12
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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 117067/00/03/pp12 Date of release: 1997 Sep 04 Document order number: 9397 75002667
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