Datasheet BF556C, BF556B, BF556A Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BF556A; BF556B; BF556C

N-channel silicon junction
field-effect transistors

Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07

1996 Jul 29

Philips Semiconductors Product specification

N-channel silicon junction
field-effect transistors

FEATURES

• Low leakage level (typ. 500 fA)

• High gain

• Low cut-off voltage.

APPLICATIONS

• Impedance converters in e.g. electret microphones and
infra-red detectors

• VHF amplifiers in oscillators and mixers.

DESCRIPTION

N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.

PINNING - SOT23

PIN SYMBOL DESCRIPTION

1 s source
2 d drain
3 g gate‘

BF556A; BF556B; BF556C

handbook, halfpage

Marking codes:

BF556A: M84.
BF556B: M85.
BF556C: M86.

The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.

21

Top view

3

Fig.1 Simplified outline and symbol.

CAUTION

g

MAM036

d
s

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

DSS

DS
GSoff

drain-source voltage (DC) −±30 V
gate-source cut-off voltage ID= 200 µA; VDS=15V −0.5 −7.5 V
drain current VGS= 0; VDS=15V

BF556A 3 7 mA
BF556B 6 13 mA
BF556C 11 18 mA

P

tot

y

 forward transfer admittance VGS= 0; VDS=15V 4.5 − mS

fs

total power dissipation up to T

=25°C − 250 mW

amb

1996 Jul 29 2

Philips Semiconductors Product specification

N-channel silicon junction

BF556A; BF556B; BF556C

field-effect transistors

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GSO

V

GDO

I

G

P

tot

T

stg

T

j

Note

1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain

lead 10 mm

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

drain-source voltage (DC) −±30 V
gate-source voltage open drain −−30 V
gate-drain voltage (DC) open source −−30 V
forward gate current (DC) − 10 mA
total power dissipation up to T

=25°C; note 1 − 250 mW

amb

storage temperature −65 150 °C
operating junction temperature − 150 °C

2

.

thermal resistance from junction to ambient; note 1 500 K/W

Note

1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain

lead 10 mm2.

STATIC CHARACTERISTICS

=25°C; unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)GSS

V

GSoff

I

DSS

gate-source breakdown voltage IG= −1 µA; VDS=0 −30 −−V
gate-source cut-off voltage ID= 200 µA; VDS=15V −0.5 −7.5 V
drain current VGS= 0; VDS=15V

BF556A 3 − 7mA
BF556B 6 − 13 mA
BF556C 11 − 18 mA

I

GSS

 forward transfer admittance VGS= 0; VDS= 15 V 4.5 −−mS

y

fs

 common source output

y

os

gate leakage current VGS= −20 V; VDS=0 −−0.5 −5000 pA

VGS= 0; VDS=15V − 40 −µS

admittance

1996 Jul 29 3

Philips Semiconductors Product specification

N-channel silicon junction

BF556A; BF556B; BF556C

field-effect transistors

DYNAMIC CHARACTERISTICS

T

=25°C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS TYP. UNIT

C

is

C

rs

g

is

g

fs

g

rs

g

os

V

n

input capacitance VDS= 15 V; VGS= −10 V; f = 1 MHz 1.7 pF

= 15 V; VGS= 0; f = 1 MHz 3 pF

V

DS

reverse transfer capacitance VDS= 15 V; VGS= −10 V; f = 1 MHz 0.8 pF

= 15 V; VGS= 0; f = 1 MHz 0.9 pF

V

DS

common source input conductance VDS= 10 V; ID= 1 mA; f = 100 MHz 15 µS

= 10 V; ID= 1 mA; f = 450 MHz 300 µS

V

DS

common source transfer conductance VDS= 10 V; ID= 1 mA; f = 100 MHz 2 mS

= 10 V; ID= 1 mA; f = 450 MHz 1.8 mS

V

DS

common source reverse conductance VDS= 10 V; ID= 1 mA; f = 100 MHz −6 µS

= 10 V; ID= 1 mA; f = 450 MHz −40 µS

V

DS

common source output conductance VDS= 10 V; ID= 1 mA; f = 100 MHz 30 µS

= 10 V; ID= 1 mA; f = 450 MHz 60 µS

V

DS

equivalent input noise voltage VDS=10V; ID= 1 mA; f = 100 Hz 40 nV/√Hz

V

GSoff

MRC154

(V)

20

handbook, halfpage

I

DSS

(mA)

16

12

8

4

0

01234567

VDS=15V.

Fig.2 Drain current as a function of gate-source

cut-off voltage; typical values.

10

handbook, halfpage

Y

fs

(mS)

8

6

4

2

0

01234567

VDS= 15V; ID=1µA.

MRC156

V

GSoff

(V)

Fig.3 Forward transfer admittance as a function

of gate-source cut-off voltage; typical
values.

1996 Jul 29 4

Philips Semiconductors Product specification

N-channel silicon junction
field-effect transistors

100

handbook, halfpage

Gos
(µS)

80

60

40

20

0

0 −2 −4 −8

VDS=15V.

BF556A; BF556B; BF556C

MRC153

−6
V

(V)

GSoff

300

handbook, halfpage

R

DSon

(Ω)

200

100

0

024 8

VDS= 100mV; VGS=0.

6

V

GSoff

MRC155

(V)

Fig.4 Common-source output conductance as a

function of gate-source cut-off voltage;
typical values.

handbook, halfpage

5

ID

(mA)

4

3

2

1

0

048 16

MRC145

VGS = 0 V

−0.5 V

−1 V

12

VDS (V)

Fig.5 Drain-source on-state resistance as a

function of gate-source cut-off voltage;
typical values.

16

handbook, halfpage

ID

(mA)

12

8

4

0

0 4 8 12 16

VGS = 0 V

VDS (V)

MRC146

−0.5 V

−1.0 V

−1.5 V

−2.0 V

−2.5 V

Fig.6 Typical output characteristics; BF556A.

1996 Jul 29 5

Fig.7 Typical output characteristics; BF556B.

Philips Semiconductors Product specification

N-channel silicon junction
field-effect transistors

25

handbook, halfpage

ID

(mA)

20

15

10

5

0

048 16

VGS = 0 V

12

VDS (V)

MRC147

−1 V

−2 V

−3 V

−4 V

−5 V

30

handbook, halfpage

ID

(mA)

20

10

0

−6 −4 −20

BF556A; BF556B; BF556C

MRC148

BF556C

BF556B

BF556A

VGS (V)

Fig.8 Typical output characteristics; BF556C.

3

10

handbook, halfpage

ID

(µA)

2

10

10

1

−1

10

−2

10

−3

10

BF556C BF556B BF556A

V

MRC149

GS

(V)

VDS=15V.

Fig.9 Typical input characteristics.

0.1 mA

16

VDG (V)

MRC151

1 mA

2012480

2

−10

handbook, halfpage

I

G

(pA)

−10

−1

I

GSS

−1

−10

−2

0−8 −6 −4 −2

−10

ID = 10 mA

VDS=15V.

Fig.10 Drain current as a function of gate-source

voltage; typical values.

1996 Jul 29 6

ID= 10mA only for BF556B and BF556C.

Fig.11 Gate current as a function of drain-gate

voltage; typical values.

Philips Semiconductors Product specification

N-channel silicon junction
field-effect transistors

3

10

handbook, halfpage

I



GSS

(pA)

2

10

10

1

−1

10

100

MRC150

Tj (°C)

BF556A; BF556B; BF556C

T

amb

MRC166

o

( C)

300

P

tot

(mW)

200

100

150500−50

0

0 50 100 150

VDS= 0; VGS= −20V.

Fig.12 Gate current as a function of junction

temperature; typical values.

handbook, halfpage

1

C

rs

(pF)

0.8

0.6

0.4

0.2

0

–10 –8 –6 –4 –2 0

VGS(V)

MRC134

handbook, halfpage

3

C

is

(pF)

2

1

0
–10 –8 –6 –4 –2 0

Fig.13 Power derating curve.

MRC140

VGS(V)

VDS=15V.

Fig.14 Reverse transfer capacitance; typical values.

1996 Jul 29 7

VDS=15V.

Fig.15 Input capacitance; typical values.

Philips Semiconductors Product specification

N-channel silicon junction
field-effect transistors

2

10

handbook, halfpage

gis, bis

(mS)

10

bis


1

−1

10

−2

10

10

10

gis


2

f (MHz)

MRC142

BF556A; BF556B; BF556C

f (MHz)

MRC141

3

10

10

handbook, halfpage

gfs, −bfs

(mS)

1

−1

3

10

10

10 10

gfs


−bfs


2

VDS= 10V; ID= 1mA; T

amb

=25°C.

Fig.16 Common-source input admittance; typical

values.

−10

handbook, halfpage

brs, grs

(mS)

−1

−1

−10

−2

−10

−3

−10

10

brs


grs


2

10

MRC144

f (MHz)

VDS= 10V; ID= 1mA; T

amb

=25°C.

Fig.17 Common-source transfer admittance;

typical values.

10

handbook, halfpage

bos, gos

(mS)

bos

1

−1

10

−2

3

10

10

10 10



gos


2

f (MHz)

MRC143

3

10

VDS= 10V; ID= 1mA; T

amb

=25°C.

Fig.18 Common-source reverse admittance;

typical values.

1996 Jul 29 8

VDS= 10V; ID= 1mA; T

amb

=25°C.

Fig.19 Common-source output admittance;

typical values.

Philips Semiconductors Product specification

N-channel silicon junction
field-effect transistors

3

10

handbook, halfpage

V

n

(V)

2

10

10

1

10

2

10

3

10

BF556A; BF556B; BF556C

MRC278

4

10

f (Hz)

5

10

VDS= 10V; ID= 1mA.

Fig.20 Equivalent noise voltage as a function of

frequency.

1996 Jul 29 9

Philips Semiconductors Product specification

N-channel silicon junction
field-effect transistors

PACKAGE OUTLINE

handbook, full pagewidth

0.55

0.45

o

10

max

1.1

max

30

max

0.150

0.090

0.1

max

max

o

BF556A; BF556B; BF556C

3.0

2.8

1.9

0.95

21

o

10

3

0.48

0.38

TOP VIEW

B

A

1.4

1.2

M0.1 AB

2.5

max

MBC846

0.2

A

M

Dimensions in mm.

Fig.21 SOT23.

1996 Jul 29 10

Philips Semiconductors Product specification

N-channel silicon junction

BF556A; BF556B; BF556C

field-effect transistors

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Jul 29 11