Datasheet BF547W Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BF547W

NPN 1 GHz wideband transistor

Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14

Philips Semiconductors

June 1994

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BF547W

FEATURES

• Stable oscillator operation

• High current gain

• Good thermal stability.

APPLICATIONS

It is primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.

DESCRIPTION

Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BF547W uses the same crystal as the
SOT23 version, BF547.

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, 2 columns

Top view

Marking code: E2.

Fig.1 SOT323

3

12

MBC870

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
h
C
f

CBO
CEO

C

tot

FE

re

T

collector-base voltage open emitter −−30 V
collector-emitter voltage open base −−20 V
collector current (DC) −−50 mA
total power dissipation up to Ts=63°C; note 1 −−300 mW
DC current gain IC= 2 mA; VCE= 10 V 40 95 250
feedback capacitance IC= 0; VCB=10V; f=1MHz − 1 − pF
transition frequency IC= 15 mA; VCE=10V;

0.8 1.2 1.6 GHz

f = 500 MHz

G

UM

maximum unilateral power gain IC= 1 mA; VCE=10V;

f = 100 MHz; T

amb

=25°C

− 20 − dB

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current (DC) − 50 mA
total power dissipation up to Ts=63°C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − +150 °C

Note to the “Quick reference data” and “Limiting values”

1. T

is the temperature at the soldering point of the collector pin.

s

June 1994 2

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BF547W

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note

1. T

s

CHARACTERISTICS

=25°C (unless otherwise specified).

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

C

re

f

T

G

UM

thermal resistance from junction to soldering point up to Ts=63°C; note 1 290 K/W

is the temperature at the soldering point of the collector pin.

collector-base breakdown

IC= 0.01 mA; IE=0 −−30 V

voltage
collector-emitter breakdown

IC= 10 mA; IB=0 −−20 V

voltage
emitter-base breakdown voltage IE= 0.01 mA; IC=0 −−3V
collector cut-off current IE= 0; VCB=10V −−100 nA
DC current gain IC= 2 mA; VCE= 10 V 40 95 250
feedback capacitance IC= 0; VCB= 10 V; f = 1 MHz − 1 − pF
transition frequency IC= 15 mA; VCE=10V;

0.8 1.2 1.6 GHz

f = 500 MHz

maximum unilateral power gain;
note 1

IC= 1 mA; VCE=10V;
f = 100 MHz; T

amb

=25°C;

− 20 − dB

Note

1. G

is the maximum unilateral power gain, assuming s12 is zero.

UM

2

s

G

UM

10

-----------------------------------------------------------­1s

–()1s

21

2

11

–()

dB.log=

2

22

June 1994 3

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BF547W

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100 200

150

T ( C)

Fig.2 Power derating curve.

s

MLB587

o

140

handbook, halfpage

h

FE

100

60

20

1

VCE= 10V; Tj=25°C.

110

10

I (mA)

C

Fig.3 DC current gain as a function of collector

current; typical values.

MBB397

2

10

handbook, halfpage

2

C

re

(pF)

1.6

1.2

0.8

0.4

0

0

IC= 0; f = 1 MHz.

48

12 16

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MLB588

V (V)

CB

1.4

handbook, halfpage

f

T

(GHz)

1

0.6

0.2

20

VCE= 10 V; f = 500 MHz.

1

110

10

MLB589

I (mA)

C

2

10

Fig.5 Transition frequency as a function

of collector current; typical values.

June 1994 4

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BF547W

30

handbook, halfpage

gain
(dB)

20

10

0

0

VCE= 10 V; f = 100 MHz.

510 20

15

Fig.6 Gain as a function of collector current;

typical values.

MLB590

I (mA)

C

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

10

VCE= 10 V; IC=15mA.

Fig.7 Gain as a function of frequency;

2

10

typical values.

MLB591

3

10

f (MHz)

4

10

MLB592

I (mA)

C

V

CE(sat)

(V)

0.8

0.6

0.4

0.2

IC/IB= 10.

1

0

0

handbook, halfpage

24

68

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

handbook, halfpage

10

6

F

(dB)

4

2

0

1

VCE= 10 V; ZS=ZL=50Ω; f = 100 MHz.

110

I (mA)

MLB593

10

C

Fig.9 Minimum noise figure as a function of

collector current; typical values.

June 1994 5

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BF547W

o

handbook, full pagewidth

135

o

0.5

90

1

o

45

2

1.0

0.8

0.6

VCE= 10 V; IC= 15 mA; Zo=50Ω.

Fig.10 Common emitter input reflection coefficient (s11); typical values.

handbook, full pagewidth

180

0.2

5

2 GHz

o

0.2 1 2 5

0

0.2

o

135

o

135

0.5

0.5

40 MHz

2

1

o

90

o

90

5

o

45

MLB594

o

45

0.4

0.2

o

00

1.0

40 MHz

o

180

25 20 15 10 5

o

135

VCE= 10 V; IC=15mA.

Fig.11 Common emitter forward transmission coefficient (s21); typical values.

June 1994 6

90

2 GHz

o

o

0

o

45

MLB595

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BF547W

o

90

handbook, full pagewidth

VCE= 10 V; IC=15mA.

handbook, full pagewidth

135

o

o

45

2 GHz

0.5 0.4 0.3 0.2 0.1

o

180

o

135

40 MHz

o

90

o

0

o

45

MLB596

Fig.12 Common emitter reverse transmission coefficient (s12); typical values.

o

90

1.0

0.8

0.6

135

1

o

0.5

o

45

2

0.2

180

o

0.2 0.5 1 2 5

0

0.2

0.5

o

135

VCE= 10 V; IC= 15 mA; Zo=50Ω.

Fig.13 Common emitter output reflection coefficient (s22); typical values.

June 1994 7

5

0.4

0.2

o

40 MHz

00

5

2 GHz

2

1

o

90

o

45

MLB597

1.0

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BF547W

SPICE parameters for the BF547W crystal

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 289.1 aA
2 BF 94.29 −
3 NF 0.989 −
4 VAF 90.00 V
5 IKF 158.6 mA
6 ISE 426.6 aA
7 NE 1.491 −
8 BR 12.32 −
9 NR 0.989 −
10 VAR 19.39 V
11 IKR 24.75 mA
12 ISC 249.7 pA
13 NC 1.200 −
14 RB 50.00 Ω
15 IRB 1.000 µA
16 RBM 50.00 Ω
17 RE 0.500 Ω
18 RC 1.309 Ω

(1)

19
20
21

(1)
(1)

XTB 0.000 −
EG 1.110 eV

XTI 3.000 −
22 CJE 1.071 pF
23 VJE 727.3 mV
24 MJE 0.332 −
25 TF 92.98 ps
26 XTF 43.89 −
27 VTF 1.813 V
28 ITF 143.9 mA
29 PTF 0.000 deg
30 CJC 1.167 pF
31 VJC 489.0 mV
32 MJC 0.253 −
33 XCJC 0.150 −
34 TR 50.00 ns

(1)

35

CJS 0.000 F

SEQUENCE No. PARAMETER VALUE UNIT

(1)

36
37

(1)

VJS 750.0 mV
MJS 0.000 −

38 FC 0.950 −

Note

1. These parameters have not been extracted, the
default values are shown.

B

B,E

(f)=QL

C

cb

E'

E

B,E

L

E

L3

√(f/fc);

C

MBC964

handbook, halfpage

L1 L2

B

C

QLB= 50; QLE= 50; QL
fc= scaling frequency = 100 MHz.

L

be ce

Fig.14 Package equivalent circuit SOT323.

List of components (see Fig.14).

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

2fF
100 fF

100 fF
L1 0.34 nH
L2 0.10 nH
L3 0.34 nH
L

B

L

E

0.60 nH

0.60 nH

CB' C'

June 1994 8

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BF547W

PACKAGE OUTLINE

0.2

1.00

0.1

max

max

0.25

0.10

0.3

0.1

1.35

1.15

BA

2

1.4

2.2

1.2

1.8

1

MBC871

Dimensions in mm.

0.2

0.2

3

0.4

0.2

B

M

A

M

2.2

2.0

Fig.15 SOT323.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

June 1994 9

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BF547W

NOTES

June 1994 10

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BF547W

NOTES

June 1994 11

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123065/1500/02/pp12 Date of release: June 1994
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Philips Semiconductors