Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BF510 to 513
N-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
December 1997
Page 2
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
PINNING - SOT23
1 = gate
2 = drain
3 = source
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
handbook, halfpage
3
g
12
Top view
MAM385
Fig.1 Simplified outline and symbol.
d
s
QUICK REFERENCE DATA
Drain-source voltage V
Drain current (DC or average) I
max. 20 V
DS
max. 30 mA
D
Total power dissipation
up to T
=40°CP
amb
max. 250 mW
tot
BF510 511 512 513
Drain current > 0.7 2.5 6 10 mA
= 10 V; VGS= 0 I
V
DS
< 3.0 7.0 12 18 mA
DSS
Transfer admittance (common source)
V
= 10 V; VGS= 0; f = 1 kHz yfs > 2.5 4 6 7 mS
DS
Feedback capacitance
V
= 10 V; VGS=0 C
DS
V
= 10 V; ID= 5 mA C
DS
typ. 0.3 0.3 −−pF
rs
typ. −−0.3 0.3 pF
rs
Noise figure at optimum source admittance
G
= 1 mS; −BS= 3 mS; f = 100 MHz
S
= 10 V; VGS= 0 F typ. 1.5 1.5 −−dB
V
DS
V
= 10 V; ID= 5 mA F typ. −−1.5 1.5 dB
DS
December 1997 2
Page 3
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage V
Drain-gate voltage (open source) V
Drain current (DC or average) I
Gate current ± I
Total power dissipation up to T
=40°C (note 1) P
amb
Storage temperature range T
Junction temperature T
THERMAL RESISTANCE
DS
DGO
D
G
tot
stg
j
max. 20 V
max. 20 V
max. 30 mA
max. 10 mA
max. 250 mW
−65 to + 150 °C
max. 150 °C
From junction to ambient (note 1) R
Note
1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.
STATIC CHARACTERISTICS
=25°C
T
amb
BF510 511 512 513
Gate cut-off current
= 0.2 V; VDS=0 −I
−V
GS
GSS
< 10 10 10 10 nA
Gate-drain breakdown voltage
IS=0;−ID=10µA −V
(BR)GDO
> 20 20 20 20 V
Drain current
VDS= 10 V; VGS=0 I
DSS
>
<
0.7
3.0
Gate-source cut-off voltage
I
=10µA; VDS= 10 V −V
D
(P)GS
typ. 0.8 1.5 2.2 3 V
th j-a
2.5
7.0
= 430 K/W
6
12
1018mA
mA
December 1997 3
Page 4
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): V
= 10 V; VGS= 0; T
DS
= 10 V; ID= 5 mA; T
V
DS
=25°C for BF510 and BF511
amb
=25°C for BF512 and BF513
amb
y-parameters (common source) BF510 511 512 513
Input capacitance at f = 1 MHz C
Input conductance at f = 100 MHz g
Feedback capacitance at f = 1 MHz C
is
is
rs
Transfer admittance at f = 1 kHz y
V
= 0 instead of ID= 5 mA yfs > − − 6.0 7.0 mS
GS
Transfer admittance at f = 100 MHz y
Output capacitance at f = 1 MHz C
Output conductance at f = 1 MHz g
Output conductance at f = 100 MHz g
os
os
os
< 5555pF
typ. 100 90 60 50 µS
typ. 0.4 0.4 0.4 0.4 pF
< 0.5 0.5 0.5 0.5 pF
> 2.5 4.0 4.0 3.5 mS
fs
typ. 3.5 5.5 5.0 5.0 mS
fs
< 3333pF
< 60 80 100 120 µS
typ. 35 55 70 90 µS
Noise figure at optimum source admittance
GS= 1 mS; −BS= 3 mS;
f = 100 MHz F typ. 1.5 1.5 1.5 1.5 dB
1.5
handbook, halfpage
C
rs
(pF)
1
0.5
0
0
typ
4 8 12 16
MDA275
VDS (V)
20
Fig.2 VGS= 0 for BF510 and BF511;
ID= 5 mA for BF512 and BF513;
f = 1 MHz; T
amb
= 25 °C.
December 1997 4
10
handbook, halfpage
|y
|
fs
(mS)
8
6
BF510
4
2
0
05
BF511
Fig.3 VDS= 10 V; f = 1 kHz; T
values.
BF512
10 15
amb
MDA276
BF513
ID (mA)
=25°C; typical
Page 5
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
300
handbook, halfpage
P
tot
(mW)
200
100
0
0
MDA245
40 200
80 120 160
T
amb
Fig.4 Power derating curve.
(°C)
December 1997 5
Page 6
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
cD
p
0.48
0.15
0.09
3.0
2.8
0.38
IEC JEDEC EIAJ
e
E
1.4
1.9
1.2
REFERENCES
0.95
e
1
UNIT
mm
A
1.1
0.9
OUTLINE
VERSION
SOT23
max.
December 1997 6
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Page 7
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 1997 7
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