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HIGH CURR ENT NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDY90 is a silicon epitaxial planar NPN
power transistors in Jed ec TO-3 metal case. T hey
are intented for use in switching and linear
applications in military and industrial equipment.
BDY90
1
2
TO-3
ABSOL UT E MAXIMU M RATINGS
V
V
V
V
I
P
T
Collector-base Voltage (IE = 0) 120 V
CBO
Collector-emitter Voltage (VBE = -1.5V) 120 V
CEV
Collector-emitter Voltage (IB = 0) 100 V
CEO
Emitter-base Voltage (IC = 0) 6 V
EBO
Collector Current 10 A
I
C
Collector Peak Current (repetitive) 15 A
CM
Base Current 2 A
I
B
Total Dissipation at Tc ≤ 25 oC60W
tot
Storage Temperature -65 to 175
stg
Max. Operating Junction Temperature 175
T
j
INTERNAL SCHEMATIC DIAGRAM
Value
o
C
o
C
June 1997
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BDY90
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
V
V
T
V
V
CE
CE
case
CE
EB
= V
CBO
= V
CEV
= 150 oC
= V
CEV
= 6 V
1mA
1
3
1mA
I
= 100 mA 100 V
C
Sustaining Voltage
(I
= 0)
B
V
∗ Collector-emitter
CE(sat)
Saturation Voltage
V
∗ Base-emitter
BE(sat)
Saturation Voltage
hFE∗ DC Current Gain IC = 1 A VCE = 2 V
f
Transition-Frequency IC = 0.5 A VCE = 5 V
t
IC = 5 A IB = 0.5 A
I
= 10 A IB = 1 A
C
IC = 5 A IB = 0.5 A
I
= 10 A IB = 1 A
C
I
= 5 A VCE = 5 V
C
I
= 10 A VCE = 5 V
C
30
30
20
0.5
1.5
1.2
1.5
120
70 MHz
f = 5 MHz
t
Turn-on Time IC = 5 A IB1 = 0.5 A
on
V
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time IC = 5 A IB1 = -IB2 = 0.5 A
s
Fall Time 0.2 µs
t
f
V
= 30 V
CC
= 30 V
CC
0.35 µs
1.3 µs
mA
mA
V
V
V
V
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TO-3 MECHANICAL DATA
BDY90
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
P003F
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BDY90
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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