Datasheet BDX67C, BDX67B, BDX67A, BDX67 Datasheet (COMST)

BDX67, A, B, C

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High current power darlingtons designed for power amplification and

switching applications.

S

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings Value Unit

V

V

V

I

I

C

B

CEO

CBO

EBO

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Base Current

I

C(RMS)

I

CM

BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67

BDX67A
BDX67B
BDX67C

BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C

BDX67
BDX67A
BDX67B
BDX67C

60

80
100
120

80
100
120
140

5.0 V

16

20

0.25

V

V

A

A

P

T

T

J

T

S

Power Dissipation @ TC = 25°

Junction Temperature

Storage Temperature

BDX67, A, B, C

BDX67
BDX67A
BDX67B
BDX67C

BDX67
BDX67A
BDX67B
BDX67C

COMSET SEMICONDUCTORS 1/4

150

-55 to +200 °C

Watts

W/°C

BDX67, A, B, C

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit

BDX67

R

thJ-C

Thermal Resistance, Junction to Case

ELECT RICAL CHARACTE RISTI CS

TC=25°C unless otherwise noted

BDX67A
BDX67B
BDX67C

1.17 °C/W

Symbol Ratings

V

CEO(SUS)

I

CEO

I

EBO

I

CBO

Collector-Emitter
Breakdown Voltage (*)

Collector Cutoff Current

Emitter Cutoff Current

Collector-Base Cutoff
Current

Test Condition(s)

IC=0.1 A, L=25mH

VCE=30 V
VCE=40 V
VCE=50 V
VCE=60 V

VBE=5 V

T

=25°C, VCB=40 V

CASE

T

=150°C

CASE

T

=25°C, VCB=50 V

CASE

T

=150°C

CASE

BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C

BDX67
BDX67A
BDX67B
BDX67C

BDX67

BDX67A

Min Typ Mx Unit

60 - ­80 - -

V

100 - ­120 - -

--

-­3mA

--

--

--5.0mA

--1

--5

mA

--1

--5

COMSET SEMICONDUCTORS 2/4

BDX67, A, B, C

Symbol Ratings

Collector-Base Cutoff

I

CBO

V

CE(SAT)

C

22b

t

on

t

off

Current

Collector-Emitter saturation
Voltage (*)

Switching characteristics

Test Condition(s)

T

=25°C, VCB=60 V

CASE

T

=150°C

CASE

T

=25°C, VCB=70 V

CASE

T

=150°C

CASE

IC=10 A, IB=40 mA

IE=0 A, VCB=10V, f=1 MHz

VCC=12V, IC=-10 A, IB1=-

=0.04 A

I

B2

BDX67B

BDX67C

BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C

BDX67
BDX67A
BDX67B
BDX67C

Min Typ Mx Unit

--1

--5

mA

--1

-

--2V

- 300 - pF

-

-

3.5 -

5

-

1-

µ

s

f

C

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et V

CEci

= V

VCE=-3 V, IC=-5 A, f=1 MHz

rated by an auxiliary circuit

BDX67
BDX67A
BDX67B
BDX67C

-

50 - kHz

COMSET SEMICONDUCTORS 3/4

BDX67, A, B, C

MECHANICAL DATA CASE TO-3

DIMENSIONS

mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16

Pin 1 : Base
Pin 2 : Collector
Case : Emitter

Information furnished is believed to be accurate and reliable. However, CS assumes no respons ability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice

COMSET SEMICONDUCTORS 4/4