Page 1
BDX 66, A, B, C
High current power darlingtons designed for power amplification and
switching applications.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
I
I
C
B
CEO
CBO
EBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
I
C(RMS)
I
CM
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
-60
-80
-100
-120
-60
-80
-100
-120
-5.0 V
-16
-20
-0.25
V
V
A
A
BDX66
P
T
T
J
T
S
Power Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
COMSET SEMICONDUCTORS 1/4
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
150
-55 to +200 °C
Watts
W/°C
Page 2
BDX 66, A, B, C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BDX66
R
thJ-C
Thermal Resistance, Junction to Case
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
BDX66A
BDX66B
BDX66C
1.17 °C/W
Symbol Ratings
V
CEO(SUS)
I
CEO
Collector-Emitter
Breakdown Voltage (*)
Collector Cutoff Current
Test Condition(s)
IC=-0.1 A, L=25mH
VCE=-30 V
VCE=-40 V
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
Min Typ Mx Unit
-60 - -
-80 - V
-100 - -
-120 - -
--
--
-3 mA
VCE=-50 V
VCE=-60 V
COMSET SEMICONDUCTORS 2/4
BDX66B
BDX66C
--
--
Page 3
BDX 66, A, B, C
Symbol Ratings
I
EBO
I
CBO
Emitter Cutoff Current
Collector-Base Cutoff
Current
Test Condition(s)
VBE=-5 V
T
=25°C, VCB=-40 V
CASE
T
=150°C
CASE
T
=25°C, VCB=-50 V
CASE
T
=150°C
CASE
T
=25°C, VCB=-60 V
CASE
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
Min Typ Mx Unit
---5.0mA
---1
---5
---1
---5
mA
---1
V
CE(SAT)
C
22b
t
on
t
off
Collector-Emitter saturation
Voltage (*)
Switching characteristics
T
=150°C
CASE
T
=25°C, VCB=-70 V
CASE
T
=150°C
CASE
IC=-10 A, IB=-40 mA
IE=0 A, VCB=-10V, f=1 MHz
VCC=12V, IC=-10 A, IB1=-
=0.04
I
B2
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
---5
---1
-
-
-5
---2V
- 300 - pF
-
1-
µ
s
-
3.5 -
COMSET SEMICONDUCTORS 3/4
Page 4
BDX 66, A, B, C
Symbol Ratings
f
C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et V
CEci
= V
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Test Condition(s)
VCE=-3 V, IC=-5 A, f=1 MHz
rated by an auxiliary circuit
BDX66
BDX66A
BDX66B
BDX66C
Min Typ Mx Unit
-
60 - kHz
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
COMSET SEMICONDUCTORS 4/4
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