Datasheet BDX66B, BDX66A, BDX66, BDX66C Datasheet (COMST)

BDX 66, A, B, C

High current power darlingtons designed for power amplification and

switching applications.

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings Value Unit

V

I

C

B

CEO

CBO

EBO

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Base Current

I

C(RMS)

I

CM

BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66

BDX66A BDX66B BDX66C

BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C

BDX66 BDX66A BDX66B BDX66C

-60

-80

-100

-120

-60

-80

-100

-120

-5.0 V

-16

-20

-0.25

V

A

BDX66

P

T

J

T

S

Power Dissipation @ TC = 25°

Junction Temperature

Storage Temperature

COMSET SEMICONDUCTORS 1/4

BDX66A BDX66B BDX66C

BDX66 BDX66A BDX66B BDX66C

150

-55 to +200 °C

Watts

W/°C

BDX 66, A, B, C

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit

BDX66

R

thJ-C

Thermal Resistance, Junction to Case

ELECT RICAL CHARACTE RISTI CS

TC=25°C unless otherwise noted

BDX66A BDX66B BDX66C

1.17 °C/W

Symbol Ratings

V

CEO(SUS)

I

CEO

Collector-Emitter Breakdown Voltage (*)

Collector Cutoff Current

Test Condition(s)

IC=-0.1 A, L=25mH

VCE=-30 V

VCE=-40 V

BDX66

BDX66A

BDX66B

BDX66C

BDX66

BDX66A

Min Typ Mx Unit

-60 - -

-80 - V

-100 - -

-120 - -

--

-3 mA

VCE=-50 V

VCE=-60 V

COMSET SEMICONDUCTORS 2/4

BDX66B

BDX66C

--

BDX 66, A, B, C

Symbol Ratings

I

EBO

I

CBO

Emitter Cutoff Current

Collector-Base Cutoff Current

Test Condition(s)

VBE=-5 V

T

=25°C, VCB=-40 V

CASE

T

=150°C

CASE

T

=25°C, VCB=-50 V

CASE

T

=150°C

CASE

T

=25°C, VCB=-60 V

CASE

BDX66 BDX66A BDX66B BDX66C

BDX66

BDX66A

Min Typ Mx Unit

---5.0mA

---1

---5

---1

---5 mA

---1

V

CE(SAT)

C

22b

t

on

t

off

Collector-Emitter saturation Voltage (*)

Switching characteristics

T

=150°C

CASE

T

=25°C, VCB=-70 V

CASE

T

=150°C

CASE

IC=-10 A, IB=-40 mA

IE=0 A, VCB=-10V, f=1 MHz

VCC=12V, IC=-10 A, IB1=-

=0.04

I

B2

BDX66B

BDX66C

BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C

BDX66 BDX66A BDX66B BDX66C

---5

---1

-

-5

---2V

- 300 - pF

-

1-

µ

s

-

3.5 -

COMSET SEMICONDUCTORS 3/4

BDX 66, A, B, C

Symbol Ratings

f

C

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et V

CEci

= V

MECHANICAL DATA CASE TO-3

DIMENSIONS

mm inches A 25,51 1,004 B 38,93 1,53 C 30,12 1,18 D 17,25 0,68 E 10,89 0,43 G 11,62 0,46 H 8,54 0,34 L 1,55 0,6 M 19,47 0,77 N 1 0,04 P 4,06 0,16

Test Condition(s)

VCE=-3 V, IC=-5 A, f=1 MHz

rated by an auxiliary circuit

BDX66 BDX66A BDX66B BDX66C

Min Typ Mx Unit

-

60 - kHz

Pin 1 : Base Pin 2 : Collector Case : Emitter

COMSET SEMICONDUCTORS 4/4