Datasheet BDX65C, BDX65B, BDX65A, BDX65 Datasheet (COMST)

BDX 65, A, B, C

NPN SILICON DARLINGTONS

General purpose darlingtons designed for power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings Value Unit

BDX65

V

CEO

V

CEV

V

EBO

I

C

I

B

Collector-Emitter Voltage

Collector-EmitterVoltage VBE=-1.5 V

Emitter-Base Voltage

I

C(RMS)

Collector Current

I

CM

Base Current

BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65

BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C

BDX65
BDX65A
BDX65B
BDX65C

60

80
100
120

80
100
120
120

5.0 V

12

16

0.2

V

V

A

A

BDX65

P

T

T

J

T

S

Power Dissipation @ TC = 25°

Junction Temperature

Storage Temperature

COMSET SEMICONDUCTORS 1/4

BDX65A
BDX65B
BDX65C

BDX65
BDX65A
BDX65B
BDX65C

117

-55 to +200 °C

Watts

W/°C

BDX 65, A, B, C

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit

BDX65

R

thJ-C

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTIC S

TC=25°C unless otherwise noted

BDX65A
BDX65B
BDX65C

1.5 °C/W

Symbol Ratings

V

CEO(SUS)

I

CEO

Collector-Emitter
Breakdown Voltage (*)

Collector Cutoff Current

Test Condition(s)

IC=0.1 A, IB=0, L=25mH

VCE=30 V

VCE=40 V

BDX65

BDX65A

BDX65B

BDX65C

BDX65

BDX65A

Min Typ Mx Unit

60 - -

80 - -

V

100 - -

120 - -

--

-­1mA

VCE=50 V

VCE=60 V

COMSET SEMICONDUCTORS 2/4

BDX65B

BDX65C

--

--

BDX 65, A, B, C

Symbol Ratings

I

EBO

I

CBO

Emitter Cutoff Current

Collector-Base Cutoff
Current

VBE=5 V

V

=60 V

CBO

V

=60 V

CBO

T

=150°C

CASE

V

=80 V

CBO

V

=80 V

CBO

=150°C

T

CASE

V

=100 V

CBO

Test Condition(s)

BDX65
BDX65A
BDX65B
BDX65C

BDX65

BDX65A

Min Typ Mx Unit

--5.0mA

--0.4

--3

--0.4

--3

mA

--0.4

V

CE(SAT)

V

F

V

BE

F

h21e

Collector-Emitter saturation
Voltage (*)

Forward Voltage (pulse
method)

Base-Emitter Voltage (*)

Forward current transfer
ratio Cutoff frequency

V

=100 V

CBO

T

=150°C

CASE

V

=120 V

CBO

V

=120 V

CBO

=150°

T

CASE

IC=5.0 A, IB=20 mA

IF=3 A

IC=5.0 A, VCE=3V

VCE=3 V, IC=5 A

BDX65B

BDX65C

BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C

--3

--0.4

-

-

3

--2V

1.8

-

-V

--3V

-

60 - kHz

COMSET SEMICONDUCTORS 3/4

BDX 65, A, B, C

Symbol Ratings

f

T

h

21E

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et V

Transition Frequency

Static forward current
transfer ratio (*)

CEci

= V

MECHANICAL DATA CASE TO-3

Test Condition(s)

VCE=3 V, IC=5 A, f=1 MHz

VCE=3 V, IC=1 A

VCE=3 V, IC=5 A

VCE=3 V, IC=10 A

rated by an auxiliary circuit

BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C

Min Typ Mx Unit

-

7-MHz

- 1500

1000

-

1500

-

--

-

-

DIMENSIONS

mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16

Pin 1 : Base
Pin 2 : Collector
Case : Emitter

COMSET SEMICONDUCTORS 4/4