Datasheet BDX64C, BDX64B, BDX64A, BDX64 Datasheet (COMST)

BDX 64, A, B, C

General purpose darlingtons designed for power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings Value Unit

BDX64

V

CEO

V

CEV

V

EBO

I

C

Collector-Emitter Voltage

Collector-EmitterVoltage VBE=-1.5 V

Emitter-Base Voltage

I

C(RMS)

Collector Current

I

CM

BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64

BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C

-60

-80

-100

-120

-60

-80

-100

-120

-5.0 V

-12

-16

V

A

COMSET SEMICONDUCTORS 1/5

BDX 64, A, B, C

Symbol Ratings Value Unit

BDX64

I

B

P

T

Base Current

Power Dissipation

@ T

= 25°

C

BDX64A BDX64B BDX64C

BDX64 BDX64A BDX64B BDX64C

0.2

117

A

Watts

W/°C

T

J

T

S

Junction Temperature

Storage Temperature

BDX64 BDX64A BDX64B BDX64C

-55 to +200 °C

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit

BDX64

R

thJ-C

Thermal Resistance, Junction to Case

BDX64A BDX64B BDX64C

1.5 °C/W

COMSET SEMICONDUCTORS 2/5

BDX 64, A, B, C

ELECTRICAL CHARACTERISTIC S

TC=25°C unless otherwise noted

Symbol Ratings

V

CEO(SUS)

I

CEO

Collector-Emitter Breakdown Voltage (*)

Collector Cutoff Current

Test Condition(s)

IC=-0.1 A, IB=0, L=25mH

VCE=-30 V

VCE=-40 V

BDX64

BDX64A

BDX64B

BDX64C

BDX64

BDX64A

Min Typ Mx Unit

-60 - -

-80 - V

-100 - -

-120 - -

--

-1.0 mA

I

EBO

Emitter Cutoff Current

VCE=-50 V

VCE=-60 V

VBE=-5 V

BDX64B

BDX64C

BDX64 BDX64A BDX64B BDX64C

--

---5.0mA

COMSET SEMICONDUCTORS 3/5

BDX 64, A, B, C

Symbol Ratings

Collector-Base Cutoff

I

CBO

Current

V

V T

V

V T

V

V T

CBO

CBO CASE

CBO

CBO CASE

CBO

CBO CASE

Test Condition(s)

=-60 V

=150°C

=-80 V

=150°C

=-100 V

=150°C

BDX64

BDX64A

BDX64B

Min Typ Mx Unit

--0.2

--2

--0.2

-

--2

--0.2

--2

V

CE(SAT)

V

F

V

BE

F

h21e

Collector-Emitter saturation Voltage (*)

Forward Voltage (pulse method)

Base-Emitter Voltage (*)

Forward current transfer ratio Cutoff frequency

V

=-120 V

CBO

V

=-120 V

CBO

T

=150°

CASE

IC=-5.0 A, IB=-20 mA

IF=5 A

IC=-5.0 A, VCE=-3V

VCE=3 V, IC=5 A

BDX64C

BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C

--0.2

-

2

---2V

1.8

-

-V

---2.5V

-

60 - KHz

COMSET SEMICONDUCTORS 4/5

BDX 64, A, B, C

Symbol Ratings

f

T

h

21E

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et V

Transition Frequency

Static forward current transfer ratio (*)

CEci

= V

MECHANICAL DATA CASE TO-3

Test Condition(s)

VCE=-3 V, IC=-5 A, f=1 MHz

VCE=-3 V, IC=-1 A

VCE=-3 V, IC=-5 A

VCE=-3 V, IC=-12 A

rated by an auxiliary circuit

BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C

Min Typ Mx Unit

-

7-MHz

- 1500

1000

- 750 -

-

--

-

DIMENSIONS

mm inches A 25,51 1,004 B 38,93 1,53 C 30,12 1,18 D 17,25 0,68 E 10,89 0,43 G 11,62 0,46 H 8,54 0,34 L 1,55 0,6 M 19,47 0,77 N 1 0,04 P 4,06 0,16

Pin 1 : Base Pin 2 : Collector Case : Emitter

COMSET SEMICONDUCTORS 5/5