Page 1
BDX 63, A, B, C
NNPPNN SSIILLIICCOONN DDAARRLLIINNGGTTOONNS
General purpose darlingtons designed for power amplifier and switching
applications.
S
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDX63
V
CEO
V
CEV
V
EBO
I
C
I
B
Collector-Emitter Voltage
Collector-EmitterVoltage VBE=-1.5 V
Emitter-Base Voltage
I
C(RMS)
Collector Current
I
CM
Base Current
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
60
80
100
120
60
80
100
120
5.0 V
8
12
0.15
V
V
A
A
BDX63
P
T
T
J
T
S
Power Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
COMSET SEMICONDUCTORS 1/4
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
90
-55 to +200 °C
Watts
W/°C
Page 2
BDX 63, A, B, C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BDX63
R
thJ-C
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTIC S
TC=25°C unless otherwise noted
BDX63A
BDX63B
BDX63C
1.94 °C/W
Symbol Ratings
V
CEO(SUS)
I
CEO
Collector-Emitter
Breakdown Voltage (*)
Collector Cutoff Current
Test Condition(s)
IC=0.1 A, IB=0, L=25mH
VCE=30 V
VCE=40 V
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
Min Typ Mx Unit
60 - -
80 - -
V
100 - -
120 - -
--
--
0.5 mA
VCE=50 V
VCE=60 V
COMSET SEMICONDUCTORS 2/4
BDX63B
BDX63C
--
--
Page 3
BDX 63, A, B, C
Symbol Ratings
I
EBO
I
CBO
Emitter Cutoff Current
Collector-Base Cutoff
Current
VBE=5 V
V
=60 V
CBO
V
=60 V
CBO
=150°C
T
CASE
V
=80 V
CBO
V
=80 V
CBO
=150°C
T
CASE
Test Condition(s)
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
Min Typ Mx Unit
--5.0mA
--0.2
--2
--0.2
--2
mA
V
CE(SAT)
V
F
V
BE
F
h21e
Collector-Emitter saturation
Voltage (*)
Forward Voltage (pulse
method)
Base-Emitter Voltage (*)
Forward current transfer
ratio Cutoff frequency
V
=100 V
CBO
V
=100 V
CBO
T
=150°C
CASE
V
=120 V
CBO
V
=120 V
CBO
T
=150°
CASE
IC=3.0 A, IB=12 mA
IF=3 A
IC=3.0 A, VCE=3V
VCE=3 V, IC=3 A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
--0.2
--2
--0.2
-
-
2
--2V
1.8
-
-V
--2.5V
-
60 - kHz
COMSET SEMICONDUCTORS 3/4
Page 4
BDX 63, A, B, C
Symbol Ratings
f
T
h
21E
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et V
Transition Frequency
Static forward current
transfer ratio (*)
CEci
= V
MECHANICAL DATA CASE TO-3
Test Condition(s)
VCE=3 V, IC=3 A, f=1 MHz
VCE=3 V, IC=0.5 A
VCE=3 V, IC=3 A
VCE=3 V, IC=8 A
rated by an auxiliary circuit
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
Min Typ Mx Unit
-
7-MHz
- 1500
1000
- 750 -
-
--
-
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
COMSET SEMICONDUCTORS 4/4
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