Datasheet BDX63C, BDX63B, BDX63A, BDX63 Datasheet (COMST)

BDX 63, A, B, C

NNPPNN SSIILLIICCOONN DDAARRLLIINNGGTTOONNS

General purpose darlingtons designed for power amplifier and switching

applications.

S

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings Value Unit

BDX63

V

CEO

V

CEV

V

EBO

I

C

I

B

Collector-Emitter Voltage

Collector-EmitterVoltage VBE=-1.5 V

Emitter-Base Voltage

I

C(RMS)

Collector Current

I

CM

Base Current

BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C BDX63

BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C

BDX63 BDX63A BDX63B BDX63C

60

80 100 120

60

80 100 120

5.0 V

8

12

0.15

V

A

BDX63

P

T

J

T

S

Power Dissipation @ TC = 25°

Junction Temperature

Storage Temperature

COMSET SEMICONDUCTORS 1/4

BDX63A BDX63B BDX63C

BDX63 BDX63A BDX63B BDX63C

90

-55 to +200 °C

Watts

W/°C

BDX 63, A, B, C

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit

BDX63

R

thJ-C

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTIC S

TC=25°C unless otherwise noted

BDX63A BDX63B BDX63C

1.94 °C/W

Symbol Ratings

V

CEO(SUS)

I

CEO

Collector-Emitter Breakdown Voltage (*)

Collector Cutoff Current

Test Condition(s)

IC=0.1 A, IB=0, L=25mH

VCE=30 V

VCE=40 V

BDX63

BDX63A

BDX63B

BDX63C

BDX63

BDX63A

Min Typ Mx Unit

60 - -

80 - -

V

100 - -

120 - -

--

0.5 mA

VCE=50 V

VCE=60 V

COMSET SEMICONDUCTORS 2/4

BDX63B

BDX63C

--

BDX 63, A, B, C

Symbol Ratings

I

EBO

I

CBO

Emitter Cutoff Current

Collector-Base Cutoff Current

VBE=5 V

V

=60 V

CBO

V

=60 V

CBO

=150°C

T

CASE

V

=80 V

CBO

V

=80 V

CBO

=150°C

T

CASE

Test Condition(s)

BDX63 BDX63A BDX63B BDX63C

BDX63

BDX63A

Min Typ Mx Unit

--5.0mA

--0.2

--2

--0.2

--2 mA

V

CE(SAT)

V

F

V

BE

F

h21e

Collector-Emitter saturation Voltage (*)

Forward Voltage (pulse method)

Base-Emitter Voltage (*)

Forward current transfer ratio Cutoff frequency

V

=100 V

CBO

V

=100 V

CBO

T

=150°C

CASE

V

=120 V

CBO

V

=120 V

CBO

T

=150°

CASE

IC=3.0 A, IB=12 mA

IF=3 A

IC=3.0 A, VCE=3V

VCE=3 V, IC=3 A

BDX63B

BDX63C

BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C

--0.2

--2

--0.2

-

2

--2V

1.8

-

-V

--2.5V

-

60 - kHz

COMSET SEMICONDUCTORS 3/4

BDX 63, A, B, C

Symbol Ratings

f

T

h

21E

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et V

Transition Frequency

Static forward current transfer ratio (*)

CEci

= V

MECHANICAL DATA CASE TO-3

Test Condition(s)

VCE=3 V, IC=3 A, f=1 MHz

VCE=3 V, IC=0.5 A

VCE=3 V, IC=3 A

VCE=3 V, IC=8 A

rated by an auxiliary circuit

BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C

Min Typ Mx Unit

-

7-MHz

- 1500

1000

- 750 -

-

--

-

DIMENSIONS

mm inches A 25,51 1,004 B 38,93 1,53 C 30,12 1,18 D 17,25 0,68 E 10,89 0,43 G 11,62 0,46 H 8,54 0,34 L 1,55 0,6 M 19,47 0,77 N 1 0,04 P 4,06 0,16

Pin 1 : Base Pin 2 : Collector Case : Emitter

COMSET SEMICONDUCTORS 4/4