BDX 62, A, B, C
PNP SILICON DARLINGTONS
General purpose darlingtons designed for power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDX62
V
CEO
V
CEV
V
EBO
I
C
I
B
Collector-Emitter Voltage
Collector-EmitterVoltage VBE=-1.5 V
Emitter-Base Voltage
I
C(RMS)
Collector Current
I
CM
Base Current
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
-60
-80
-100
-120
-60
-80
-100
-120
-5.0 V
-8
-12
-0.15
V
V
A
A
BDX62
P
T
Power Dissipation @ TC = 25°
COMSET SEMICONDUCTORS 1/5
BDX62A
BDX62B
BDX62C
90
Watts
W/°C
BDX 62, A, B, C
Symbol Ratings Value Unit
T
J
T
S
Junction Temperature
Storage Temperature
BDX62
BDX62A
BDX62B
BDX62C
-55 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BDX62
R
thJ-C
Thermal Resistance, Junction to Case
BDX62A
BDX62B
BDX62C
1.94 °C/W
ELECTRICAL CHARACTERISTIC S
TC=25°C unless otherwise noted
Symbol Ratings
Test Condition(s)
Min Typ Mx Unit
V
CEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
IC=-0.1 A, IB=0, L=25mH
BDX62
BDX62A
BDX62B
BDX62C
-60 - -
-80 - V
-100 - -
-120 - -
COMSET SEMICONDUCTORS 2/5
BDX 62, A, B, C
Symbol Ratings
I
CEO
I
EBO
Collector Cutoff Current
Emitter Cutoff Current
VCE=-30 V
VCE=-40 V
VCE=-50 V
VCE=-60 V
VBE=-5 V
V
=-60 V
CBO
Test Condition(s)
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
Min Typ Mx Unit
--
--
-0.5 mA
--
--
---5.0mA
---0.2
I
CBO
Collector-Base Cutoff
Current
V
T
V
V
T
V
CBO
CASE
CBO
CBO
CASE
CBO
=-60 V
=150°C
=-80 V
=-80 V
=150°C
=-100 V
BDX62
BDX62A
BDX62B
---2
---0.2
---2
---0.2
-
COMSET SEMICONDUCTORS 3/5
BDX 62, A, B, C
Symbol Ratings
I
CBO
Collector-Emitter saturation
V
CE(SAT)
V
F
V
BE
F
h21e
f
T
h
21E
Voltage (*)
Forward Voltage (pulse
method)
Base-Emitter Voltage (*)
Forward current transfer
ratio Cutoff frequency
Transition Frequency
Static forward current
transfer ratio (*)
Test Condition(s)
V
=-100 V
CBO
=150°C
T
CASE
V
=-120 V
CBO
V
=-120 V
CBO
T
=150°
CASE
IC=-3.0 A, IB=-12 mA
IF=3 A
IC=-3.0 A, VCE=-3V
VCE=3 V, IC=3 A
VCE=-3 V, IC=-3 A, f=1 MHz
VCE=-3 V, IC=-0.5 A
VCE=-3 V, IC=-3 A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
Min Typ Mx Unit
---2
---0.2
-
-
-1.8- V
1500
-
---V
-
-
1000
750 -
--
-2
-2.5 V
60 - kHz
7-MHz
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et V
CEci
= V
COMSET SEMICONDUCTORS 4/5
VCE=-3 V, IC=-8 A
rated by an auxiliary circuit
BDX 62, A, B, C
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
COMSET SEMICONDUCTORS 5/5
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