Page 1
®
■ STMicroelectronics P REF ERRED
SALESTYPE
■ MONOLIT HIC DA RLING T O N
CONFIGU R ATIO N
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
BDX54F
SILICON PNP POWER
DARLINGTON TRANSISTOR
3
2
1
DESCRIPTION
The BDX54F is a silicon Epitaxial-Base PNP
TO-220
power transistor in monolithic Darlington
configuration, mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
INTER NAL SCH E M ATI C DIAG RA M
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 160 V
CBO
Collector-Emitter Voltage (IB = 0) 160 V
CEO
Emitter-base Voltage (IC = 0) 5 V
EBO
Collector Current 8 A
I
C
Collector Peak Current 12 A
CM
Base Current 0.2 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
60 W
o
C
o
C
January 2000
1/4
Page 2
BDX54F
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.08
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 80 V 0.5 mA
V
CE
= 160 V 0.2 mA
V
CB
= 5 V 5 mA
V
EB
I
= 50 mA 160 V
C
Sustaining Voltage
(I
= 0)
B
∗ Collector-emitter
V
CE(sat)
IC = 2 A IB =10 mA 2 V
Saturation Voltage
V
∗ Base-emitter
BE(sat)
IC = 2 A IB =10 mA 2.5 V
Saturation Voltage
∗ DC Current Gain IC = 2 A VCE = 5 V
h
FE
VF∗ Parallel Diode Forward
I
= 3 A VCE = 5 V
C
IF = 2 A 2.5 V
500
150
Voltage
∗ Small Signal Current
h
fe
Gain
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
IC = 0.5 A
f = 1MHz V
= 2 V 20
CE
2/4
Page 3
TO-220 MECHANICAL DATA
BDX54F
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
3/4
Page 4
BDX54F
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent righ ts of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replac es all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
4/4
Loading...