Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BDX35; BDX36; BDX37
NPN switching transistors
Product specification
Supersedes data of September 1994
1997 Apr 16
File under Discrete Semiconductors, SC04
Page 2
Philips Semiconductors Product specification
NPN switching transistors BDX35; BDX36; BDX37
FEATURES
• High current (max. 5 A)
• Low voltage (max. 75 V).
APPLICATIONS
• High-current switching in power applications.
DESCRIPTION
NPN switching transistor in a TO-126; SOT32 plastic
package.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to the metal part of
the mounting surface
3 base
handbook, halfpage
3
123
Top view
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
2
1
MAM254
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BDX35 −−100 V
BDX36; BDX37 −−120 V
V
CEO
collector-emitter voltage open base
BDX35; BDX36 −−60 V
BDX37 −−75 V
I
C
P
tot
h
FE
f
T
t
off
collector current (DC) −−5A
total power dissipation Tmb≤ 75 °C −−15 W
DC current gain IC= 0.5 A; VCE=10V 45 − 450
transition frequency IC= 0.5 A; VCE= 5 V; f = 100 MHz − 100 − MHz
turn-off time I
Con
= 5 A; I
Bon
= 0.5 A; I
= −0.5 A − 350 500 ns
Boff
1997 Apr 16 2
Page 3
Philips Semiconductors Product specification
NPN switching transistors BDX35; BDX36; BDX37
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BDX35 − 100 V
BDX36; BDX37 − 120 V
collector-emitter voltage open base
BDX35; BDX36 − 60 V
BDX37 − 75 V
emitter-base voltage open collector − 5V
collector current (DC) − 5A
peak collector current − 10 A
peak base current − 2A
total power dissipation Tmb≤ 75 °C − 15 W
≤ 25 °C − 1.25 W
T
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient in free air 100 K/W
thermal resistance from junction to mounting base 5 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CBO
I
EBO
h
FE
collector cut-off current
BDX35 I
= 0; VCB=80V −−100 nA
E
I
= 0; VCB=80V; Tj= 100 °C −−10 µA
E
collector cut-off current
BDX36; BDX37 I
= 0; VCB= 100 V −−100 nA
E
= 0; VCB= 100 V; Tj= 100 °C −−10 µA
I
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 0.5 A; VCE= 10 V; see Fig.2
BDX35; BDX36 45 130 450
BDX37 45 80 450
V
V
CEsat
CEsat
collector-emitter saturation voltage IC= 5 A; IB= 0.5 A −−900 mV
collector-emitter saturation voltage
BDX35; BDX37 I
BDX36 I
= 7 A; IB= 0.7 A −−1.2 V
C
= 10 A; IB=1A −−2V
C
1997 Apr 16 3
Page 4
Philips Semiconductors Product specification
NPN switching transistors BDX35; BDX36; BDX37
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
BEsat
V
BEsat
C
c
f
T
Switching times (between 10% and 90% levels)
t
on
t
off
base-emitter saturation voltage IC= 5 A; IB= 0.5 A −−1.7 V
base-emitter saturation voltage
BDX35; BDX37 I
BDX36 I
= 7 A; IB= 0.7 A −−2V
C
= 10 A; IB=1A −−2.5 V
C
collector capacitance IE=ie= 0; VCB=10V; f=1MHz − 40 60 pF
transition frequency IC= 0.5 A; VCE= 5 V; f = 100 MHz − 100 − MHz
turn-on time I
turn-off time I
I
I
I
I
Con
Con
Con
Con
Con
Con
= 1 A; I
= 2 A; I
= 5 A; I
= 1 A; I
= 2 A; I
= 5 A; I
Bon
Bon
Bon
Bon
Bon
Bon
= 0.1 A; I
= 0.2 A; I
= 0.5 A; I
= 0.1 A; I
= 0.2 A; I
= 0.5 A; I
= −0.1 A − 60 100 ns
Boff
= −0.2 A −−80 ns
Boff
= −0.5 A − 180 300 ns
Boff
= −0.1 A − 600 800 ns
Boff
= −0.2 A − 450 700 ns
Boff
= −0.5 A − 350 500 ns
Boff
80
handbook, full pagewidth
h
FE
60
40
20
0
−1
10
VCE=1V.
MGD840
1
10 10
2
3
10
IC (mA)
4
10
Fig.2 DC current gain; typical values.
1997 Apr 16 4
Page 5
Philips Semiconductors Product specification
NPN switching transistors BDX35; BDX36; BDX37
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
P
L
1
E
P
123
A
1
D
L
wM
0 2.5 5 mm
DIMENSIONS (mm are the original dimensions)
UNIT b
mm
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
0.88
2.7
0.65
2.3
OUTLINE
VERSION
SOT32 TO-126
cD
p
0.60
11.1
0.45
10.5
IEC JEDEC EIAJ
E
7.8
7.2
e
4.58
REFERENCES
e
1
2.29
16.5
15.3
c
Q
scale
(1)
L
1
LQ w
max
2.54
1.5
0.9
P
3.2
3.0
1997 Apr 16 5
P
3.9
3.6
1
e
1
e
0.254
EUROPEAN
PROJECTION
ISSUE DATE
97-03-04
Page 6
Philips Semiconductors Product specification
NPN switching transistors BDX35; BDX36; BDX37
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 16 6
Page 7
Philips Semiconductors Product specification
NPN switching transistors BDX35; BDX36; BDX37
NOTES
1997 Apr 16 7
Page 8
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© Philips Electronics N.V. 1997 SCA54
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 Apr 16 Document order number: 9397 75001955
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