Valeurs limites absolues à une températeur boîtier de 25°C
Paramètres Symbole Valeur Unité
BDX34
BDX34A
Tension Collector-base (I
Tension Collector-emetteur (I
Tension Emetteur-base V
Courant de collecteur en continu I
Courant de base en continu I
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)P
Température de fonctionnement à l'air libre T
Tempétature de stockage T
Température de fonctionnement à l'air libre T
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
= -30 V
= -30 V
= -40 V
= -50 V
= -60 V
= -30 V
= -30 V
= -40 V
= -50 V
= -60 V
= -45 V
= -60 V
= -80 V
= -100 V
= -120 V
= -45 V
= -60 V
= -80 V
= -100 V
= -120 V
I
= 0
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
I
= 0
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
T
= 100°C
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
T
= 100°C
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= -5 V IC = 0 -10 mA
V
= -3 V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
V
= -3 V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
I
= -8 mA
B
= -8 mA
I
B
= -6 mA
I
B
= -6 mA
I
B
= -6 mA
I
B
= -8 AIB = 0-4V
I
E
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
= -4 A
= -4 A
= -3 A
= -3 A
= -3 A
= -4 A
= -4 A
= -3 A
= -3 A
= -3 A
= -4 A
= -4 A
= -3 A
= -3 A
= -3 A
(Voir Notes 3 et 4)
(Voir Notes 3 et 4)
(Voir Notes 3 et 4)
NOTES: 3. Ces paramètres sont obtenus en utilisant des impulsions, tp = 300 µs, rapport cyclique ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
-45
-60
-80
-100
-120
750
750
750
750
750
-0.5
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-1
-1
-1
-1
-1
-5
-5
-5
-5
-5
-2.5
-2.5
-2.5
-2.5
-2.5
-2.5
-2.5
-2.5
-2.5
-2.5
V
mA
mA
V
V
Page 3
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
thermal characteristics
PARAMETERMINTYPMAXUNIT
R
R
resistive-load-switching characteristics at 25°C case temperature
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
Junction to case thermal resistance1.78°C/W
θJC
Junction to free air thermal resistance62.5°C/W
θJA
PARAMETERTEST CONDITIONS
Turn-on timeIC = -3 A
t
on
t
Turn-off time5µs
off
V
BE(off)
= 3.5 V
I
B(on)
R
L
= -12 mA
= 10 Ω
†
I
= 12 mA
B(off)
= 20 µs, dc ≤ 2%
t
p
AUGUST 1993 - REVISED MARCH 1997
MINTYPMAXUNIT
1µs
PRODUCT INFORMATION
3
Page 4
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
50000
10000
1000
- Typical DC Current Gain
FE
h
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5-1·0-10
IC - Collector Current - A
Figure 1. Figure 2.
TCS135AF
TC = -40°C
TC = 25°C
TC = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
-1·0
- Collector-Emitter Saturation Voltage - V
CE(sat)
V
-0·5
-0·5-1·0-10
IC - Collector Current - A
TCS135AH
TC = -40°C
TC = 25°C
TC = 100°C
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-3·0
TC = -40°C
TC = 25°C
TC = 100°C
-2·5
-2·0
-1·5
- Base-Emitter Saturation Voltage - V
-1·0
BE(sat)
V
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5-1·0-10
IC - Collector Current - A
Figure 3.
TCS135AJ
PRODUCT INFORMATION
4
Page 5
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
70
60
50
40
30
20
- Maximum Power Dissipation - W
tot
P
10
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TIS130AB
0
0255075100125150
TC - Case Temperature - °C
Figure 4.
PRODUCT INFORMATION
5
Page 6
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
Version 1, 18.0 mm. Version 2, 17.6 mm.
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
3,96
ø
3,71
see Note B
see Note C
0,97
0,61
10,4
10,0
123
1,70
1,07
2,74
2,34
5,28
4,88
2,95
2,54
6,1
3,5
4,70
4,20
1,32
1,23
6,6
6,0
15,90
14,55
14,1
12,7
0,64
0,41
2,90
2,40
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
PRODUCT INFORMATION
6
VERSION 2 VERSION 1
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBE
Page 7
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
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of patents or services described herein. Nor is any license, either express or implied, granted under any patent
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SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.