Datasheet BDX34C, BDX34B, BDX34A, BDX34 Datasheet (Fairchild Semiconductor)

BDX34/A/B/C

Power Linear and Switching Applications

• High Gain General Purpose

• Power Darlington TR

• Complement to BDX33/33A/33B/33C respectively

BDX34/A/B/C

1

1.Base 2.Collector 3.Emitter

TO-220

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

I

C

I

CP

I

B

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current (DC) - 10 A
*Collector Current (Pulse) - 15 A
Base Current - 0.25 A
Collector Dissipation (TC=25°C) 70 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C

TC=25°C unless otherwise noted

: BDX34
: BDX34A
: BDX34B
: BDX34C

: BDX34
: BDX34A
: BDX34B
: BDX34C

- 45

- 60

- 80

- 100

- 45

- 60

- 80

- 100

V
V
V
V

V
V
V
V

©2000 Fairchild Semiconductor International Rev. A, February 2000

BDX34/A/B/C

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min. Typ. Max. Units

V

(sus) * Collector-Emitter Sustaining Voltage

CEO

(sus) * Collector-Emitter Sustaining Voltage

VCER

V

(sus) * Collector-Emitter Sustaining Voltage

CEV

ICBO

I

CEO

IEBO
hFE

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current V
* DC Current Gain

: BDX34/34A
: BDX34B/34C

(sat) * Collector-Emitter Saturation Voltage

V

CE

: BDX34/34A
: BDX34B/34C

(on) * Base-Emitter ON Voltage

V

BE

: BDX34/34A
: BDX34B/34C

V

F

* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed

* Parallel Diode Forward Voltage IF = - 8A - 4 V

: BDX34
: BDX34A
: BDX34B
: BDX34C

: BDX34
: BDX34A
: BDX34B
: BDX34C

: BDX34
: BDX34A
: BDX34B
: BDX34C

: BDX34
: BDX34A
: BDX34B
: BDX34C

: BDX34
: BDX34A
: BDX34B
: BDX34C

= -100mA, IB = 0

I

C

I

= -1 00mA, IB = 0

C

= 100Ω

R

BE

= - 100mA, IB = 0

I

C

= - 1.5V

V

BE

= - 45V, IE = 0

V

CB

V

= - 60V, IE = 0

CB

= - 80V, IE = 0

V

CB

= - 100V, IE = 0

V

CB

V

= - 22V, IB = 0

CE

= - 30V, IB = 0

V

CE

= - 40V, IB =0

V

CE

V

= - 50V, IB = 0

CE

= - 5V, IC = 0 - 5 mA

EB

= - 3V, IC = - 4A

V

CE

= - 3V, IC = - 3A

V

CE

I

= - 4A, IB = - 8mA

C

= - 3A, IB = - 6mA

I

C

= - 3V, IC = - 4A

V

CE

V

= - 3V, IC = - 3A

CE

- 45

- 60

- 80

- 100

- 45

- 60

- 80

- 100

- 45

- 60

- 80

- 100

- 0.2

- 0.2

- 0.2

- 0.2

- 0.5

- 0.5

- 0.5

- 0.5

750
750

- 2.5

- 2.5

- 2.5

- 2.5

V
V
V
V

V
V
V
V

V
V
V
V

mA
mA
mA
mA

mA
mA
mA
mA

V
V

V
V

©2000 Fairchild Semiconductor International Rev. A, February 2000

Typical Characteristics

BDX34/A/B/C

100k

10k

1k

, DC CURRENT GAIN

FE

h

100

-0.1 -1 -10

IC [A], COLLECTOR CURRENT

Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage

-10.0

-7.5

-5.0

VCE = -3V

VCE= -3V

-10

-1

(sat) [V], SATURATION VOLTAGE

CE

V

-0.1

-0.1 -1 -10

IC= 250I

B

IC [A], COLLECTOR CURRENT

1000

100

f = 1MHz
IE = 0

-2.5

[A], COLLECTOR CURRENT

C

I

-0.0

-0 -1 -2 -3 -4

VBE[V], BASE-EMITTER VOLTAGE

[pF], CAPACTIANCE

ob

C

10

-1 -10 -100

VCB [V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance

-100

IC MAX. (Pulsed)

-10

IC MAX. (Continuous)

-1

[A], COLLECTOR CURRENT

C

I

-0.1

-1 -10 -100 -1000

5 ms

DC

BDX34
BDX34A
BDX34B

BDX34C

100 us1 ms

VCE [V], COLLECTOR-EMITTER VOLTAGE

10 us

80

70

60

50

40

30

20

[W], POWER DISSIPATION

D

P

10

0

0 25 50 75 100 125 150 175 200

Tc [oC], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Package Demensions

±0.10

(1.70)

1.30

±0.20

9.20
(1.46)

9.90
(8.70)

ø3.60

TO-220

±0.20

±0.10

(45°)

(3.70)(3.00)

±0.10

2.80

±0.20

15.90

18.95MAX.

4.50

1.30

±0.20

+0.10
–0.05

BDX34/A/B/C

±0.20

13.08

(1.00)

1.27

2.54TYP

[2.54

±0.10

±0.20

]

10.00

±0.20

1.52

±0.10

0.80

±0.10

2.54TYP

±0.20

[2.54

±0.30

10.08

+0.10

0.50

–0.05

2.40

±0.20

]

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
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2

E

CMOS™
FACT™
FACT Quiet Series™

®

FAST
FASTr™
GTO™

HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench

®

QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6

SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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INTERNATIONAL.
As used herein:

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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

©2000 Fairchild Semiconductor International Rev. E

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.