Datasheet BDX33, BDX33C, BDX33D, BDX33B, BDX33A Datasheet (Power Innovations)

● Designed for Complementary Use with

BDX34, BDX34A, BDX34B, BDX34C and
BDX34D

BDX33, BDX33A, BDX33B, BDX33C, BDX33D

NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

TO-220 PACKAGE

(TOP VIEW)

● 70 W at 25°C Case Temperature

1
2
3

● 10 A Continuous Collector Current

● Minimum h

of 750 at 3 V, 3 A

FE

B
C
E

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

BDX33
BDX33A

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage V
Continuous collector current I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P
Operating free air temperature range T
Storage temperature range T
Operating free-air temperature range T

NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.

2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

E

= 0)

= 0)

B

BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D

V

V

CBO

CEO

EBO

C
B
tot
tot

J

stg

A

MDTRACA

45
60

80
100
120

45

60

80
100
120

5 V

10 A

0.3 A
70 W

2 W

-65 to +150 °C

-65 to +150 °C

-65 to +150 °C

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D

BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D

V

(BR)CEO

I

CEO

I

CBO

I

EBO

h

V

BE(on)

V

CE(sat)

V

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector cut-off
current

Emitter cut-off
current

Forward current

FE

transfer ratio

Base-emitter
voltage

Collector-emitter
saturation voltage

Parallel diode

EC

forward voltage

= 100 mA IB = 0 (see Note 3)

I

C

V

= 30 V

CE

= 30 V

V

CE

= 40 V

V

CE

= 50 V

V

CE

= 60 V

V

CE

= 30 V

V

CE

= 30 V

V

CE

= 40 V

V

CE

= 50 V

V

CE

= 60 V

V

CE

V

= 45 V

CB

= 60 V

V

CB

= 80 V

V

CB

= 100 V

V

CB

= 120 V

V

CB

= 45 V

V

CB

= 60 V

V

CB

= 80 V

V

CB

= 100 V

V

CB

= 120 V

V

CB

= 5 V IC= 0 10 mA

V

EB

V

= 3 V

CE

= 3 V

V

CE

= 3 V

V

CE

= 3 V

V

CE

= 3 V

V

CE

V

= 3 V

CE

= 3 V

V

CE

= 3 V

V

CE

= 3 V

V

CE

= 3 V

V

CE

I

= 8 mA

B

= 8 mA

I

B

= 6 mA

I

B

= 6 mA

I

B

= 6 mA

I

B

= 8 A IB = 0 4 V

I

E

I

B

I

B

I

B

I

B

I

B

I

B

I

B

I

B

I

B

I

B

I

E

I

E

I

E

I

E

I

E

I

E

I

E

I

E

I

E

I

E

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0

= 4 A
= 4 A
= 3 A
= 3 A
= 3 A
= 4 A
= 4 A
= 3 A
= 3 A
= 3 A
= 4 A
= 4 A
= 3 A
= 3 A
= 3 A

T

= 100°C

C

= 100°C

T

C

= 100°C

T

C

= 100°C

T

C

= 100°C

T

C

T

= 100°C

C

= 100°C

T

C

= 100°C

T

C

= 100°C

T

C

= 100°C

T

C

(see Notes 3 and 4)

(see Notes 3 and 4)

(see Notes 3 and 4)

NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

45
60

80
100
120

750
750
750
750
750

0.5

0.5

0.5

0.5

0.5
10
10
10
10
10

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

V

mA

1
1
1
1
1

mA

5
5
5
5
5

V

V

PRODUCT INFORMATION

2

BDX33, BDX33A, BDX33B, BDX33C, BDX33D

NPN SILICON POWER DARLINGTONS

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

resistive-load-switching characteristics at 25°C case temperature

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

Junction to case thermal resistance 1.78 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

PARAMETER TEST CONDITIONS

Turn-on time IC = 3 A

t

on

t

Turn-off time 5 µs

off

V

BE(off)

= -3.5 V

I

B(on)

R

L

= 12 mA

= 10 Ω

†

I

= -12 mA

B(off)

= 20 µs, dc ≤ 2%

t

p

AUGUST 1993 - REVISED MARCH 1997

MIN TYP MAX UNIT

1 µs

PRODUCT INFORMATION

3

BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

50000

10000

1000

- Typical DC Current Gain

FE

h

VCE = 3 V
tp = 300 µs, duty cycle < 2%

100

0·5 1·0 10

IC - Collector Current - A

Figure 1. Figure 2.

TCS130AF

TC = -40°C
TC = 25°C
TC = 100°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

2·0

tp = 300 µs, duty cycle < 2%
IB = IC / 100

1·5

1·0

- Collector-Emitter Saturation Voltage - V

CE(sat)

V

0·5

0·5 1·0 10

IC - Collector Current - A

TCS130AH

TC = -40°C
TC = 25°C
TC = 100°C

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

3·0

TC = -40°C
TC = 25°C
TC = 100°C

2·5

2·0

1·5

- Base-Emitter Saturation Voltage - V
1·0

BE(sat)

V

IB = IC / 100
tp = 300 µs, duty cycle < 2%

0·5

0·5 1·0 10

IC - Collector Current - A

Figure 3.

TCS130AJ

PRODUCT INFORMATION

4

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs

CASE TEMPERATURE

80

70

60

50

40

30

20

- Maximum Power Dissipation - W

tot

P

10

BDX33, BDX33A, BDX33B, BDX33C, BDX33D

NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

TIS130AB

0

0 25 50 75 100 125 150

TC - Case Temperature - °C

Figure 4.

PRODUCT INFORMATION

5

BDX33, BDX33A, BDX33B, BDX33C, BDX33D

Version 1, 18.0 mm. Version 2, 17.6 mm.

NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

TO220

3,96

ø

3,71

see Note B

see Note C

0,97
0,61

10,4
10,0

1 2 3

1,70
1,07

2,74
2,34

5,28
4,88

2,95
2,54

6,1
3,5

4,70
4,20

1,32
1,23

6,6
6,0

15,90
14,55

14,1
12,7

0,64
0,41

2,90
2,40

NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.

PRODUCT INFORMATION

6

VERSION 2 VERSION 1

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBE

BDX33, BDX33A, BDX33B, BDX33C, BDX33D

NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

7