Datasheet BDX33B, BDX33C, BDX34B, BDX34C Datasheet (ON Semiconductor)

BDX33B, BDX33C* (NPN)
BDX34B, BDX34C* (PNP)

BDX33C and BDX34C are Preferred Devices

Darlington Complementary
Silicon Power Transistors

These devices are designed for general purpose and low speed

switching applications.

http://onsemi.com

Features

•High DC Current Gain - h

= 2500 (typ.) at IC = 4.0

FE

•Collector-Emitter Sustaining Voltage at 100 mAdc

V

CEO(sus)

= 80 Vdc (min) - BDX33B, BDX334B
= 100 Vdc (min) - BDX33C, BDX334C

•Low Collector-Emitter Saturation Voltage

V

= 2.5 Vdc (max) at IC = 3.0 Adc

CE(sat)

- BDX33B, 33C/34B, 34C

•Monolithic Construction with Build-In Base-Emitter Shunt Resistors

•Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage

BDX33B, BDX34B

BDX33C, BDX34C

Collector-Base Voltage

BDX33B, BDX34B

BDX33C, BDX34C

Emitter-Base Voltage V

Collector Current - Continuous

- Peak

Base Current I

Total Device Dissipation @ TC = 25°C
Derate above 25°C

Operating and Storage Junction
Temperature Range

V

CEO

V

I

P

TJ, T

CB

EB

C

B

D

-65 to +150 °C

stg

80

100

80

100

5.0 Vdc

10
15

0.25 Adc

70

0.56

Vdc

Vdc

Adc

W

W/°C

DARLINGTON

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80-100 VOLTS, 65 WATTS

TO-220AB

1

2

3

MARKING DIAGRAM

CASE 221A-09

STYLE 1

BDX3xyG

AY WW

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction-to-Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 12

R

q

JC

1.78 °C/W

1 Publication Order Number:

BDX3xy = Device Code

x = 3 or 4

y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

BDX33B/D

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)

80

60

40

20

, POWER DISSIPATION (WATTS)

D

P

0

0 20 40 60 80 100 120 140 160

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0) BDX33B/BDX34B

BDX33C/BDX34C

Collector-Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0, RBE = 100) BDX33B/BDX34B

BDX33C/BDX33C

Collector-Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) BDX33B/BDX34B

BDX33C/BDX34C

Collector Cutoff Current

(VCE = 1/2 rated V

, IB = 0) TC = 25°C

CEO

TC = 100°C

Collector Cutoff Current

(VCB = rated V

, IE = 0) TC = 25°C

CBO

TC = 100°C

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (Note 1)

(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C

Collector-Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C

Base-Emitter On Voltage

(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C

Diode Forward Voltage

(IC = 8.0 Adc)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.

Symbol

V

CEO(sus)

V

CER(sus)

V

CEX(sus)

I

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(on)

V

F

Min

80

100

80

100

80

100

-

-

-

-

-

750

-

-

-

Max

-

-

-

-

-

-

0.5
10

1.0

5.0

10

-

2.5

2.5

4.0

Unit

Vdc

Vdc

Vdc

mAdc

mAdc

mAdc

-

Vdc

Vdc

Vdc

http://onsemi.com

2

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

r(t) EFFECTIVE TRANSIENT

0.03

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

0.01

0.02

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)

0.2

0.1

0.05

0.02

SINGLE PULSE

0.01

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

0.03 0.3 3.0 30 300
t, TIME OR PULSE WIDTH (ms)

Figure 1. Thermal Response

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

SINGLE

PULSE

2

R

(t) = r(t) R

q

JC

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

= 1.92°C/W

- TC = P

q

(pk)

JC

1

R

(t)

q

JC

20

10

5.0

TC = 25°C

2.0

1.0

0.5

0.2

0.1

CURVES APPLY BELOW RATED V

, COLLECTOR CURRENT (AMP)

C

0.05

I

0.02

1.0

BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED

3.0 5.0 7.0 10 20 30 50 10070

2.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0 ms

1.0 ms
dc

CEO

BDX34B
BDX34C

500 ms

100

ms

Figure 2. Active-Region Safe Operating Area

There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE limits
of the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 3 is based on T

J(pk)

20

10

5.0

2.0

1.0

0.5

0.2

0.1

, COLLECTOR CURRENT (AMP)

C

I

0.05

0.02

TC = 25°C

BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED V

1.0

3.0 5.0 7.0 10 20 30 50 10070

2.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0 ms

1.0 ms
dc

CEO

BDX33B
BDX33C

500 ms

100

ms

= 150°C; TC is variable depending on conditions. Second
breakdown pulse limits are valid for duty cycles to 10%
provided T

= 150°C. T

J(pk)

may be calculated from the

J(pk)

data in Figure4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.

10,000

5000
3000

2000

1000

500
300

200

100

, SMALL-SIGNAL CURRENT GAIN

FE

h

TJ = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc

50
30

20

10

1.0

PNP
NPN

2.0 5.0 10 20 50 100 200 1000
f, FREQUENCY (kHz)

Figure 3. Small-Signal Current Gain

300

200

100

70

C, CAPACITANCE (pF)

50

500

30

0.1

http://onsemi.com

3

C

ib

PNP
NPN

1.0 2.0 5.0 20 10010

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

TJ = 25°C

C

ob

500.2 0.5

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)

20,000

10,000

5000

3000
2000

1000

, DC CURRENT GAIN

FE

h

500

300
200

3.0

2.6

0.1

NPN
BDX33B, 33C

TJ = 150°C

25°C

-55°C

0.2 0.3 0.5 0.7 1.0 2.0 10

IC, COLLECTOR CURRENT (AMP)

IC = 2.0 A

4.0 A 6.0 A

3.0 5.0 0.1

PNP
BDX34B, 34C

VCE = 4.0 V

7.0

20,000

10,000

5000

3000

2000

1000

, DC CURRENT GAIN

FE

h

500

300
200

TJ = 150°C

Figure 5. DC Current Gain

3.0

TJ = 25°C

2.6

VCE = 4.0 V

25°C

-55°C

0.2 0.3 0.5 0.7 1.0 2.0 10

IC, COLLECTOR CURRENT (AMP)

IC = 2.0 A

4.0 A 6.0 A

3.0 5.0

7.0

TJ = 25°C

2.2

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

1.0

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

0.7 2010

IB, BASE CURRENT (mA)

2.2

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

1.0

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

0.7 2010

IB, BASE CURRENT (mA)

Figure 6. Collector Saturation Region

V, VOLTAGE (VOLTS)

3.0

2.5

2.0

1.5

1.0

0.5

TJ = 25°C

VBE @ VCE = 4.0 V

V

@ IC/IB = 250

BE(sat)

V

CE(sat)

IC, COLLECTOR CURRENT (AMP)

@ IC/IB = 250

3.0

TJ = 25°C

2.5

2.0

V

@ IC/IB = 250

V, VOLTAGE (VOLTS)

1.5

1.0

0.5

BE(sat)

VBE @ VCE = 4.0 V

V

@ IC/IB = 250

CE(sat)

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

IC, COLLECTOR CURRENT (AMP)

Figure 7. “On” Voltages

http://onsemi.com

4

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)

ORDERING INFORMATION

Device Package Shipping

BDX33B TO-220

BDX33BG TO-220

(Pb-Free)

BDX33C TO-220

BDX33CG TO-220

(Pb-Free)

BDX34B TO-220

BDX34BG TO-220

(Pb-Free)

BDX34C TO-220

BDX34CG TO-220

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

†

http://onsemi.com

5

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)

l

PACKAGE DIMENSIONS

TO-220

CASE 221A-09

ISSUE AE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

-T-

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88

F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93

J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79

S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27

V 0.045 --- 1.15 ---

Z --- 0.080 --- 2.04

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
 P.O. Box 5163, Denver, Colorado 80217 USA
 Phone: [phone] or 800-344-3860 Toll Free USA/Canada
 Fax: [phone] or 800-344-3867 Toll Free USA/Canada
 Email: [e-mail]

N. American Technical Support: 800-282-9855 Toll Free
 USA/Canada

Europe, Middle East and Africa Technical Support:

 Phone: [phone]

Japan Customer Focus Center

 Phone: [phone]

http://onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loca
Sales Representative

BDX33B/D

6