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BDW93C
COMPLEMENTARY SILICON POWER
■ STMicroelectronics PREFERRED
SALESTYPES
■ COMPLEMENTARYPNP - NPN DEVICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTERDIODE
APPLICATIONS
■ LINEARANDSWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switchingapplications.
The complementaryPNPtype is BDW94C.
Also BDW94B is a PNP type.
BDW94B/BDW94C
DARLINGTONTRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 10 KΩ R2Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93C
PNP BDW94B BDW94C
V
V
I
P
T
For PNP types voltage and current values are negative.
May 1999
Collector-Base Voltag e (IE=0) 80 100 V
CBO
Collect or-Emitter Voltage (IB=0) 80 100 V
CEO
Collector Current 12 A
I
C
Collector Peak Current 15 A
CM
Base Current 0.2 A
I
B
Tot al D is sip at ion at Tc≤ 25 oC
tot
Sto rage Tem pe rature -65 to 150
stg
Max. Operat in g Junct ion Tem per at ure 150
T
j
80 W
o
C
o
C
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BDW93C/BDW94B/BDW94C
THERMAL DATA
R
thj-case
Ther mal Resistan c e Junction- case 1.56
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
Collec t or Cut-of f
Current (I
E
=0)
for BD W 94B V
for BD W 93C/94C V
=150oC
T
case
for BD W 94B V
for BD W 93C/94C V
I
CEO
I
EBO
V
CEO(sus)
Collec t or Cut-of f
Current (I
B
=0)
Emitt er Cut-off Current
=0)
(I
C
∗ Collec t or- Emit t er
Sust aining Vo lt age
=0)
(I
B
V
∗ Collec t or -Emit t er
CE(sat)
Saturation Voltage
V
∗ Base-Emi tter
BE(sat)
Saturation Voltage
h
∗ DC Curr ent Gain IC=3A VCE=3V
FE
V
* Parallel-diode F orward
F
Voltage
h
Small Signal Curren t
fe
Gain
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
for BD W 94B V
for BD W 93C/94C V
V
=5V 2 mA
EB
I
=100mA
C
for BD W 94B
for BD W 93C/94C
IC=5A IB=20mA
=10A IB=100mA
I
C
IC=5A IB=20mA
=10A IB=100mA
I
C
=5A VCE=3V
I
C
=10A VCE=3V
I
C
IF=5A
=10A
I
F
IC=1A VCE=10V
f=1MHz 20
=80V
CB
=100V
CB
=80V
CB
=100V
CB
=80V
CB
=100V
CB
80
100
1000
750
100
1.3
1.8
100
100
5
5
1
1
2
3
2.5
4
20K
2
4
µA
µA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
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Page 3
BDW93C/BDW94B/BDW94C
Safe OperatingArea
CollectorEmitterSaturation Voltage (NPN types)
DC Current Gain (NPN types)
DC Transconductance(NPN types)
CollectorEmitterSaturation Voltage (NPN types)
Collector EmitterSaturation Voltage(PNP types)
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Page 4
BDW93C/BDW94B/BDW94C
SaturatedSwitchingCharacteristics(NPN types)
CollectorEmitterSaturation Voltage (PNP types)
SaturatedSwitchingCharacteristics(PNP types)
DC Current Gain (PNP types)
DC Transconductance(PNP types)
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TO-220 MECHANICAL DATA
BDW93C/BDW94B/BDW94C
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BDW93C/BDW94B/BDW94C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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