Page 1
● Designed for Complementary Use with
BDW94, BDW94A, BDW94B and BDW94C
● 80 W at 25°C Case Temperature
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 12 A Continuous Collector Current
● Minimum h
of 750 at 3 V, 5 A
FE
B
C
E
Pin 2 is in electrical contact with the mounting base.
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BDW93
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P
Operating junction temperature range T
Storage temperature range T
Operating free-air temperature range T
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
E
= 0)
= 0)
B
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
V
V
CBO
CEO
EBO
C
B
tot
tot
j
stg
A
MDTRACA
45
60
80
100
45
60
80
100
5 V
12 A
0.3 A
80 W
2 W
-65 to +150 °C
-65 to +150 °C
-65 to +150 °C
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
Page 2
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BDW93
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
V
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
EC
forward voltage
= 100 mA IB = 0 (see Note 3)
I
C
V
= 40 V
CB
= 60 V
V
CB
= 80 V
V
CB
= 80 V
V
CB
V
= 45 V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 5 V IC= 0 2 mA
V
EB
V
= 3 V
CE
= 3 V
V
CE
= 3 V
V
CE
IB = 20 mA
= 100 mA
I
B
IB = 20 mA
= 100 mA
I
B
IE = 5 A
= 10 A
I
E
I
= 0
B
= 0
I
B
= 0
I
B
= 0
I
B
I
= 0
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
I
= 3 A
C
= 10 A
I
C
= 5 A
I
C
I
= 5 A
C
= 10 A
I
C
I
= 5 A
C
= 10 A
I
C
I
= 0
B
= 0
I
B
T
= 150°C
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
45
60
80
100
1
1
1
1
0.1
0.1
0.1
0.1
5
5
5
5
1000
100
750 20000
2
3
2.5
4
2
4
V
mA
mA
V
V
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 1.56 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
PRODUCT INFORMATION
2
Page 3
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
SEPTEMBER 1993 - REVISED MARCH 1997
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
50000
10000
1000
- Typical DC Current Gain
FE
h
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5 201·0 10
IC - Collector Current - A
Figure 1. Figure 2.
TCS130AE
TC = -40°C
TC = 25°C
TC = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
2·5
2·0
1·5
1·0
- Collector-Emitter Saturation Voltage - V
0·5
CE(sat)
V
0
0·5 201·0 10
IC - Collector Current - A
TCS130AG
TC = -40°C
TC = 25°C
TC = 100°C
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
TC = -40°C
TC = 25°C
TC = 100°C
2·5
2·0
1·5
- Base-Emitter Saturation Voltage - V
1·0
BE(sat)
V
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5 201·0 10
IC - Collector Current - A
Figure 3.
TCS130AI
PRODUCT INFORMATION
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BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
100
80
60
40
- Maximum Power Dissipation - W
tot
20
P
vs
CASE TEMPERATURE
TIS130AA
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 4.
PRODUCT INFORMATION
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BDW93, BDW93A, BDW93B, BDW93C
Version 1, 18.0 mm. Version 2, 17.6 mm.
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
3,96
ø
3,71
see Note B
see Note C
0,97
0,61
10,4
10,0
1 2 3
1,70
1,07
2,74
2,34
5,28
4,88
2,95
2,54
6,1
3,5
4,70
4,20
1,32
1,23
6,6
6,0
15,90
14,55
14,1
12,7
0,64
0,41
2,90
2,40
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
PRODUCT INFORMATION
VERSION 2 VERSION 1
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBE
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Page 6
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
6
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