Datasheet BDW84D, BDW84C, BDW84A, BDW84 Datasheet (Power Innovations)

BDW84, BDW84A, BDW84B, BDW84C, BDW84D

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with

BDW83, BDW83A, BDW83B, BDW83C and BDW83D

● 150 W at 25°C Case Temperature

● 15 A Continuous Collector Current

● Minimum h

of 750 at 3 V, 6 A

FE

B

C

E

Pin 2 is in electrical contact with the mounting base.

SOT-93 PACKAGE

(TOP VIEW)

1

2

3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

BDW84 BDW84A

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage V Continuous collector current I Continuous base current I Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P Unclamped inductive load energy (see Note 4) ½LI Operating junction temperature range T Operating temperature range T Operating free-air temperature range T

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I V

BE(off)

= 0)

E

= 0) (see Note 1)

B

= 0, RS = 0.1 Ω, VCC = -20 V.

BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D

V

CBO

CEO

EBO

C B tot tot

stg

A

C

j

2

B(on)

MDTRAA

-45

-60

-80

-100

-120

-45

-60

-80

-100

-120

-5 V

-15 A

-0.5 A 150 W

3.5 W

100 mJ

-65 to +150 °C

= -5 mA, RBE = 100 Ω,

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D

V

(BR)CEO

I

CEO

I

CBO

I

EBO

h

V

BE(on)

V

CE(sat)

V

Collector-emitter breakdown voltage

Collector-emitter cut-off current

Collector cut-off current

Emitter cut-off current Forward current

FE

transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode

EC

forward voltage

= -30 mA IB = 0 (see Note 5)

I

C

V

= -30 V

CE

= -30 V

V

CE

= -40 V

V

CE

= -50 V

V

CE

= -60 V

V

CE

V

= -45 V

CB

= -60 V

V

CB

= -80 V

V

CB

= -100 V

V

CB

= -120 V

V

CB

= -45 V

V

CB

= -60 V

V

CB

= -80 V

V

CB

= -100 V

V

CB

= -120 V

V

CB

= -5 V IC= 0 -2 mA

V

EB

VCE = -3 V

= -3 V

V

CE

= -3 V IC= -6 A (see Notes 5 and 6) -2.5 V

V

CE

IB = -12 mA

= -150 mA

I

B

= -15 A IB = 0 -3.5 V

I

E

I

= 0

B

= 0

I

B

= 0

I

B

= 0

I

B

= 0

I

B

I

= 0

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

I

= -6 A

C

= -15 A

I

C

I

= -6 A

C

= -15 A

I

C

T

= 150°C

C

= 150°C

T

C

= 150°C

T

C

= 150°C

T

C

= 150°C

T

C

(see Notes 5 and 6)

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

-45

-60

-80

-100

-120

750 100

-1

-0.5

-5

20000

-2.5

-4

V

mA

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R R

Junction to case thermal resistance 0.83 °C/W

θJC

Junction to free air thermal resistance 35.7 °C/W

θJA

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Turn-on time IC = -10 A

t

on

t

Turn-off time 7 µs

off

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

V

BE(off)

= 4.2 V

I

B(on)

R

L

= -40 mA

= 3 Ω

†

I

= 40 mA

B(off)

= 20 µs, dc ≤ 2%

t

p

PRODUCT INFORMATION

2

MIN TYP MAX UNIT

0.9 µs

BDW84, BDW84A, BDW84B, BDW84C, BDW84D

PNP SILICON POWER DARLINGTONS

TYPICAL CHARACTERISTICS

AUGUST 1978 - REVISED MARCH 1997

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

10000

1000

- Typical DC Current Gain

FE

h

VCE = -3 V tp = 300 µs, duty cycle < 2%

100

-0·5 -20-1·0 -10

IC - Collector Current - A

Figure 1. Figure 2.

TCS145AG

TC = -40°C TC = 25°C TC = 100°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

-2·0 tp = 300 µs, duty cycle < 2%

IB = IC / 100

-1·5

-1·0

-0·5

- Collector-Emitter Saturation Voltage - V

CE(sat)

V

0

-0·5 -20-1·0 -10 IC - Collector Current - A

TCS145AH

TC = -40°C TC = 25°C TC = 100°C

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

-3·0 TC = -40°C

TC = 25°C

-2·5

TC = 100°C

-2·0

-1·0

-1·5

- Base-Emitter Saturation Voltage - V

-0·5

BE(sat)

V

IB = IC / 100 tp = 300 µs, duty cycle < 2%

0

-0·5 -20-1·0 -10 IC - Collector Current - A

Figure 3.

TCS145AI

PRODUCT INFORMATION

3

BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

-100

-10

- Collector Current - A

-1·0

C

I

BDW84 BDW84A BDW84B BDW84C

-0·1

-1·0 -10 -100 -1000

BDW84D

VCE - Collector-Emitter Voltage - V

SAS145AB

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs

CASE TEMPERATURE

160

140

120

100

80

60

40

- Maximum Power Dissipation - W

tot

P

20

0

0 25 50 75 100 125 150

TC - Case Temperature - °C

TIS140AB

PRODUCT INFORMATION

4

Figure 5.

BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

MECHANICAL DATA

SOT-93 3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

SOT-93

4,1

ø

4,0

12,2 MAX.

1,30 1,10

1 2

15,2 14,7

11,1 10,8

4,90 4,70

1,37 3,95 4,15

16,2 MAX.

31,0 TYP.

18,0 TYP.

3

1,17

0,78 0,50

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

PRODUCT INFORMATION

5

MDXXAW

BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

PRODUCT INFORMATION

6