Datasheet BDW24C, BDW24B, BDW24A, BDW24 Datasheet (Fairchild Semiconductor)

Page 1
BDW24/A/B/C
Hammer Drivers, Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW23, BDW23A, BDW23B and BDW23C respectively
BDW24/A/B/C
1
1.Base 2.Collector 3.Emitter
TO-220
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
CBO
CEO
VEBO
I
C
I
CP
I
B
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage - 5 V Collector Current (DC) - 6 A *Collector Current (Pulse) - 8 A Base Current - 0.2 A Collector Dissipation (TC=25°C) 50 W Junction Temperature 150 °C Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
: BDW24 : BDW24A : BDW24B : BDW24C
: BDW24 : BDW24A : BDW24B : BDW24C
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
V V V V
V V V V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 2
BDW24/A/B/C
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
(sus) * Collector-Emitter Sustaining Voltage
CEO
: BDW24 : BDW24A : BDW24B : BDW24C
I
CBO
Collector Cut-off Current
: BDW24 : BDW24A : BDW24B : BDW24C
I
CEO
Collector Cut-off Current
: BDW24 : BDW24A : BDW24B : BDW24C
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 8mA
V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 2A, IB = - 8mA - 2.5 V
V
BE
(on) * Base-Emitter ON Voltage V
V
BE
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Emitter Cut-off Current V * DC Current Gain V
* Parallel Diode Forward Voltage IF = - 2A - 1.8 V
= - 100mA, IB = 0 - 45
I
C
- 60
- 80
- 100
V
= - 45V, IE = 0
CB
= - 60V, IE = 0
V
CB
= - 80V, IE = 0
V
CB
V
= - 100V, IE = 0
CB
= - 22V, IB = 0
V
CE
= - 30V, IB = 0
V
CE
V
= - 40V, IB = 0
CE
= - 50V, IB = 0
V
CE
= - 5V, IC = 0 - 2 mA
EB
= - 3V, IC = - 1A
CE
= - 3V, IC = - 2A
V
CE
V
= - 3V, IC = - 6A
CE
1000
750
100
- 200
- 200
- 200
- 200
- 500
- 500
- 500
- 500
20000
- 2
= - 6A, IB = - 60mA
I
C
= - 3V, IC = - 1A
CE
= - 3V, IC = - 6A
V
CE
- 3
- 2.5
- 3
V V V V
µA µA µA µA
µA µA µA µA
V V
V V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 3
Typical Characteristics
BDW24/A/B/C
10000
1000
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
-8
-7
-6
-5
-4
-3
-2
[A], COLLECTOR CURRENT
C
I
-1
-0
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0
VBE[V], BASE-EMITTER VOLTAGE
VCE = -3V
VCE = -3V
IC = 250 I
-2.4
-2.0
-1.6
-1.2
-0.8
(sat)[V], SATURATION VOLTAGE
-0.4
CE
V
-0.0
-0.1 -1 -10
B
IC[A], COLLECTOR CURRENT
-100
IC(max). Pulsed
-10
10µs
IC(max). Continuous
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100 -1000
DC
BDW24
BDW24A BDW24B
BDW24C
100µs
1ms 10ms
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 7 5 100 125 1 50 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Page 4
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20 (1.46)
9.90 (8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10 –0.05
BDW24/A/B/C
±0.20
13.08
(1.00)
1.27
2.54TYP
±0.20
[2.54
±0.10
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™
2
E
CMOS™ FACT™ FACT Quiet Series™
®
FAST FASTr™ GTO™
HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench
®
QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6
SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™
DISCLAIMER
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Semiconductor reserves the right to make changes at any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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