Datasheet BDV65C, BDV65B, BDV65A, BDV65 Datasheet (Power Innovations)

BDV65, BDV65A, BDV65B, BDV65C

NPN SILICON POWER DARLINGTONS

JUNE 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

● Designed for Complementary Use with

BDV64, BDV64A, BDV64B and BDV64C

● 125 W at 25°C Case Temperature

B

SOT-93 PACKAGE

(TOP VIEW)

1

● 12 A Continuous Collector Current

● Minimum h

of 1000 at 4 V, 5 A

FE

C

E

Pin 2 is in electrical contact with the mounting base.

2

3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

BDV65

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T

NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%

2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

E

= 0)

= 0)

B

BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C

V

V

CBO

CEO

EBO

C

CM

B
tot
tot

j

stg

L

MDTRAA

60

80
100
120

60

80
100
120

5 V
12 A
15 A

0.5 A

125 W

3.5 W

-65 to +150 °C

-65 to +150 °C
260 °C

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS

JUNE 1993 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BDV65

V

(BR)CEO

I

CEO

I

CBO

I

EBO

h

V

CE(sat)

V

V

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector cut-off
current

Emitter cut-off
current
Forward current

FE

transfer ratio
Collector-emitter
saturation voltage
Base-emitter

BE

voltage
Parallel diode

EC

forward voltage

= 30 mA IB = 0 (see Note 4)

I

C

V

= 30 V

CB

= 40 V

V

CB

= 50 V

V

CB

= 60 V

V

CB

V

= 60 V

CB

= 80 V

V

CB

= 100 V

V

CB

= 120 V

V

CB

= 30 V

V

CB

= 40 V

V

CB

= 50 V

V

CB

= 60 V

V

CB

= 5 V IC= 0 5 mA

V

EB

= 4 V IC= 5 A (see Notes 4 and 5) 1000

V

CE

= 20 mA IC= 5 A (see Notes 4 and 5) 2 V

I

B

= 4 V IC= 5 A (see Notes 4 and 5) 2.5 V

V

CE

= 10 A IB = 0 (see Notes 4 and 5) 3.5 V

I

E

I

= 0

B

= 0

I

B

= 0

I

B

= 0

I

B

I

= 0

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

T

= 150°C

C

= 150°C

T

C

= 150°C

T

C

= 150°C

T

C

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C

60

80
100
120

0.4

0.4

0.4

0.4

V

2
2

mA

2
2

mA

2
2
2
2

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

Junction to case thermal resistance 1 °C/W

θJC

Junction to free air thermal resistance 35.7 °C/W

θJA

PRODUCT INFORMATION

2

BDV65, BDV65A, BDV65B, BDV65C

NPN SILICON POWER DARLINGTONS

TYPICAL CHARACTERISTICS

JUNE 1993 - REVISED MARCH 1997

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

70000

10000

1000

- Typical DC Current Gain

FE

h

VCE = 4 V
tp = 300 µs, duty cycle < 2%

100

0·5 201·0 10

IC - Collector Current - A

Figure 1. Figure 2.

TCS140AD

TC = -40°C
TC = 25°C
TC = 100°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

2·0

tp = 300 µs, duty cycle < 2%
IB = IC / 100

1·5

1·0

0·5

- Collector-Emitter Saturation Voltage - V

CE(sat)

V

0

0·5 201·0 10

IC - Collector Current - A

TCS140AE

TC = -40°C
TC = 25°C
TC = 100°C

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

3·0

TC = -40°C
TC = 25°C

2·5

TC = 100°C

2·0

1·5

1·0

- Base-Emitter Saturation Voltage - V
0·5

BE(sat)

V

IB = IC / 100
tp = 300 µs, duty cycle < 2%

0

0·5 201·0 10

IC - Collector Current - A

Figure 3.

TCS140AF

PRODUCT INFORMATION

3

BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS

JUNE 1993 - REVISED MARCH 1997

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

140

120

100

80

60

40

- Maximum Power Dissipation - W

tot

P

20

vs

CASE TEMPERATURE

TIS140AA

0

0 25 50 75 100 125 150

TC - Case Temperature - °C

Figure 4.

PRODUCT INFORMATION

4

BDV65, BDV65A, BDV65B, BDV65C

NPN SILICON POWER DARLINGTONS

JUNE 1993 - REVISED MARCH 1997

MECHANICAL DATA

SOT-93
3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

SOT-93

4,1

ø

4,0

12,2 MAX.

1,30
1,10

1 2

15,2
14,7

11,1
10,8

4,90
4,70

1,37
3,95
4,15

16,2 MAX.

31,0 TYP.

18,0 TYP.

3

1,17

0,78
0,50

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

PRODUCT INFORMATION

MDXXAW

5

BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS

JUNE 1993 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

6