Datasheet BDV 65BG ONS Datasheet

Download

Page 1

ON Semiconductort

Complementary Silicon Plastic Power Darlingtons

. . . for use as output devices in complementary general purpose

amplifier applications.

• High DC Current Gain

HFE = 1000 (min.) @ 5 Adc

• Monolithic Construction with Built−in Base Emitter Shunt Resistors

w These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current — Continuous

ОООООООООО

— Peak

Base Current

Total Device Dissipation

@ T

= 25_C

ОООООООООО

Derate above 25_C

Operating and Storage Junction

Temperature Range

ОООООООООО

Symbol

CEO

ÎÎÎ

TJ, T

stg

ÎÎÎ

Value

100

5.0

10 20

ÎÎÎÎ

0.5

125

ÎÎÎÎ

1.0

– 65 to + 150

ÎÎÎÎ

Unit

Vdc

Adc

Watts

W/_C

NPN

BDV65B

PNP

BDV64B

DARLINGTONS

10 AMPERES

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60−80−100 − 120 VOLTS

125 WATTS

CASE 340D−02

SOT 93, TO−218 TYPE

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

DERATING FACTOR

March, 2006 − Rev. 12

Symbol

Max

1.0

Unit

_C/W

1.0

0.8

0.6

0.4

0.2

0 25 50 100 125 150

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

1 Publication Order Number:

BDV65B/D

Page 2

BDV65B BDV64B

ELECTRICAL CHARACTERISTICS

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (1)

= 30 mAdc, IB = 0)

ОООООООООООООООООООО

Collector Cutoff Current

= 50 Vdc, IB = 0)

Collector Cutoff Current

ОООООООООООООООООООО

= 100 Vdc, IE = 0)

Collector Cutoff Current

= 50 Vdc, IE = 0, TC = 150_C)

ОООООООООООООООООООО

Emitter Cutoff Current

= 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

ОООООООООООООООООООО

= 5.0 Adc, VCE = 4.0 Vdc)

Collector−Emitter Saturation Voltage

= 5.0 Adc, IB = 0.02 Adc)

ОООООООООООООООООООО

Base−Emitter Saturation Voltage

= 5.0 Adc, VCE = 4.0 Vdc)

Symbol

CEO(sus)

ÎÎÎ

CEO

CBO

ÎÎÎ

CBO

ÎÎÎ

EBO

ÎÎÎ

CE(sat)

ÎÎÎ

BE(on)

Min

100

—

1000

—

Max

—

ÎÎ

1.0

0.4

ÎÎ

2.0

ÎÎ

5.0

—

ÎÎ

2.0

ÎÎ

2.5

Unit

Vdc

mAdc

—

Vdc

NPN PNP

VCE = 4 V

10K

, DC CURRENT GAIN

0.1 1

IC, COLLECTOR CURRENT (A)

Figure 2. DC Current Gain

10K

, DC CURRENT GAIN

0.1 1

Figure 3. DC Current Gain

, COLLECTOR CURRENT (A)

http://onsemi.com

Page 3

BDV65B BDV64B

V, VOLTAGE (V)

0.1

@ IC/IB = 250

BE(sat)

, COLLECTOR CURRENT (A)

Figure 4. “On” Voltages

100

, COLLECTOR CURRENT (A)

SECONDARY BREAKDOWN LIMITED @ T THERMAL LIMIT @ T BONDING WIRE LIMIT

, COLLECTOR−EMITTER VOLTAGE (V)

v 150°C

= 25°C

BDV65B, BDV64B

10 50 100

5.0 ms

Figure 6. Active Region Safe Operating Area

V, VOLTAGE (V)

0.1

0.1 101

BE(sat)

@ IC/IB = 250

, COLLECTOR CURRENT (A)

Figure 5. “On” Voltages

There are two limitations on the power handling ability of

100 μs

1.0 ms

a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I

− V

limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 6 is based on T

= 150_C, TC is

J(pk)

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T v 150_C. T

may be calculated from the data in

J(pk)

Figure 7. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

1.0

D = 0.5

0.5

0.2

0.1

(NORMALIZED)

0.05

0.03

r(t), TRANSIENT THERMAL RESISTANCE

0.01

0.2

0.1

0.05

0.02

0.01

0.01 0.05 0.1 0.5 1.0 5 10 50 100 100

(SINGLE PULSE)

t, TIME (ms)

(pk)

DUTY CYCLE, D = t1/t

= r(t) R

JC(t)

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

− TC = P

(pk)

= 1.0°C/W MAX

Figure 7. Thermal Response

http://onsemi.com

JC(t)

500

Page 4

BDV65B BDV64B

PACKAGE DIMENSIONS

CASE 340D−02

ISSUE E

123

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A −−− 20.35 −−− 0.801 B 14.70 15.20 0.579 0.598 C 4.70 4.90 0.185 0.193 D 1.10 1.30 0.043 0.051 E 1.17 1.37 0.046 0.054

G 5.40 5.55 0.213 0.219

H 2.00 3.00 0.079 0.118 J 0.50 0.78 0.020 0.031 K 31.00 REF 1.220 REF L −−− 16.20 −−− 0.638

Q 4.00 4.10 0.158 0.161

S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF V 1.75 REF 0.069

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHESMILLIMETERS

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

http://onsemi.com

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your local Sales Representative.

BDV65B/D