Datasheet BDT61C, BDT61B, BDT61A, BDT61 Datasheet (Power Innovations)

● Designed for Complementary Use with

BDT60, BDT60A, BDT60B and BDT60C

● 50 W at 25°C Case Temperature

BDT61, BDT61A, BDT61B, BDT61C

NPN SILICON POWER DARLINGTONS

TO-220 PACKAGE

(TOP VIEW)

● 4 A Continuous Collector Current

● Minimum h

of 750 at 1.5 V, 3 A

FE

B C E

Pin 2 is in electrical contact with the mounting base.

1 2 3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

BDT61

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage V Continuous collector current I Continuous base current I Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P Operating junction temperature range T Storage temperature range T Operating free-air temperature range T

NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.

2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

E

= 0)

B

BDT61A BDT61B BDT61C BDT61 BDT61A BDT61B BDT61C

V

CBO

CEO

EBO

C B tot tot

j

stg

A

MDTRACA

60

80 100 120

60

80 100 120

5 V 4 A

0.1 A 50 W

2 W

-65 to +150 °C

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BDT61

V

(BR)CEO

I

CEO

I

CBO

I

EBO

h

V

CE(sat)

V

BE(on)

V

Collector-emitter breakdown voltage

Collector-emitter cut-off current

Collector cut-off current

Emitter cut-off current Forward current

FE

transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode

EC

forward voltage

= 30 mA IB = 0 (see Note 3)

I

C

V

= 30 V

CE

= 40 V

V

CE

= 50 V

V

CE

= 60 V

V

CE

V

= 60 V

CB

= 80 V

V

CB

= 100 V

V

CB

= 120 V

V

CB

= 30 V

V

CB

= 40 V

V

CB

= 50 V

V

CB

= 60 V

V

CB

= 5 V IC= 0 5 mA

V

EB

= 3 V IC= 1.5 A (see Notes 3 and 4) 750

V

CE

= 6 mA IC= 1.5 A (see Notes 3 and 4) 2.5 V

I

B

= 3 V IC= 1.5 A (see Notes 3 and 4) 2.5 V

V

CE

= 1.5 A IB = 0 2 V

I

E

I

= 0

B

= 0

I

B

= 0

I

B

= 0

I

B

I

= 0

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

= 0

I

E

T

= 150°C

C

= 150°C

T

C

= 150°C

T

C

= 150°C

T

C

NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

BDT61A BDT61B BDT61C BDT61 BDT61A BDT61B BDT61C BDT61 BDT61A BDT61B BDT61C BDT61 BDT61A BDT61B BDT61C

60

80 100 120

0.5

0.2

2.0

V

mA

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R R

Junction to case thermal resistance 2.5 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Turn-on time IC = 2 A

t

on

t

Turn-off time 4.5 µs

off

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

V

BE(off)

= -5 V

I

B(on)

R

L

= 8 mA

= 20 Ω

†

I

= -8 mA

B(off)

= 20 µs, dc ≤ 2%

t

p

PRODUCT INFORMATION

MIN TYP MAX UNIT

1 µs

2

BDT61, BDT61A, BDT61B, BDT61C

NPN SILICON POWER DARLINGTONS

TYPICAL CHARACTERISTICS

AUGUST 1993 - REVISED MARCH 1997

TYPICAL DC CURRENT GAIN

COLLECTOR CURRENT

20000

10000

1000

- Typical DC Current Gain

FE

h

VCE = 3 V tp = 300 µs, duty cycle < 2%

100

0·5 5·01·0

IC - Collector Current - A

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

TCS110AD

TC = -40°C TC = 25°C TC = 100°C

COLLECTOR CURRENT

2·0

tp = 300 µs, duty cycle < 2% IB = IC / 100

1·5

1·0

0·5

- Collector-Emitter Saturation Voltage - V

CE(sat)

V

0

0·5 5·01·0

IC - Collector Current - A

vs

Figure 1. Figure 2.

TCS110AB

TC = -40°C TC = 25°C TC = 100°C

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

3·0

TC = -40°C TC = 25°C TC = 100°C

2·5

2·0

1·5

- Base-Emitter Saturation Voltage - V 1·0

BE(sat)

V

IB = IC / 100 tp = 300 µs, duty cycle < 2%

0·5

0·5 5·01·0

IC - Collector Current - A

Figure 3.

TCS110AC

PRODUCT INFORMATION

3

BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

10

1·0

- Collector Current - A

0·1

C

I

SAFE OPERATING AREA

SAS110AB

BDT61 BDT61A BDT61B BDT61C

0.01 1·0 10 100 1000

VCE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs

CASE TEMPERATURE

60

50

40

30

20

TIS110AA

- Maximum Power Dissipation - W

tot

P

10

0

0 25 50 75 100 125 150

TC - Case Temperature - °C

PRODUCT INFORMATION

4

Figure 5.

BDT61, BDT61A, BDT61B, BDT61C

Version 1, 18.0 mm. Version 2, 17.6 mm.

NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

TO220

3,96

ø

3,71

see Note B

see Note C

0,97 0,61

10,4 10,0

1 2 3

1,70 1,07

2,74 2,34

5,28 4,88

2,95 2,54

6,1 3,5

4,70 4,20

1,32 1,23

6,6 6,0

15,90 14,55

14,1 12,7

0,64 0,41

2,90 2,40

NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version.

PRODUCT INFORMATION

VERSION 2 VERSION 1

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBE

5

BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

PRODUCT INFORMATION

6