Datasheet BDT60C, BDT60B, BDT60A, BDT60 Datasheet (Power Innovations)

Page 1
BDT61, BDT61A, BDT61B and BDT61C
50 W at 25°C Case Temperature
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
4 A Continuous Collector Current
Minimum h
of 750 at 1.5 V, 3 A
FE
B C E
Pin 2 is in electrical contact with the mounting base.
1 2 3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BDT60
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V Continuous collector current I Continuous base current I Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P Operating junction temperature range T Storage temperature range T Operating free-air temperature range T
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
E
= 0)
= 0)
B
BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C
V
V
CBO
CEO
EBO
C B tot tot
j
stg
A
MDTRACA
-60
-80
-100
-120
-60
-80
-100
-120
-5 V
-4 A
-0.1 A 50 W
2 W
-65 to +150 °C
-65 to +150 °C
-65 to +150 °C
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
1
Page 2
BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BDT60
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(on)
V
Collector-emitter breakdown voltage
Collector-emitter cut-off current
Collector cut-off current
Emitter cut-off current Forward current
FE
transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode
EC
forward voltage
= -30 mA IB = 0 (see Note 3)
I
C
V
= -30 V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
V
CE
V
= -60 V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
V
CB
= -30 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
V
CB
= -5 V IC= 0 -5 mA
V
EB
= -3 V IC= -1.5 A (see Notes 3 and 4) 750
V
CE
= -6 mA IC= -1.5 A (see Notes 3 and 4) -2.5 V
I
B
= -3 V IC= -1.5 A (see Notes 3 and 4) -2.5 V
V
CE
= -1.5 A IB = 0 -2.0 V
I
E
I
= 0
B
= 0
I
B
= 0
I
B
= 0
I
B
I
= 0
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
T
= 150°C
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C
-60
-80
-100
-120
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
V
mA
mA
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R R
Junction to case thermal resistance 2.5 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = -2 A
t
on
t
Turn-off time 4.5 µs
off
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= 5 V
I
B(on)
R
L
= -8 mA
= 20
I
= 8 mA
B(off)
= 20 µs, dc 2%
t
p
PRODUCT INFORMATION
MIN TYP MAX UNIT
1 µs
2
Page 3
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL DC CURRENT GAIN
COLLECTOR CURRENT
20000
10000
1000
- Typical DC Current Gain
FE
h
VCE = -3 V tp = 300 µs, duty cycle < 2%
100
-0·5 -5·0-1·0 IC - Collector Current - A
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
TCS115AD
TC = -40°C TC = 25°C TC = 100°C
COLLECTOR CURRENT
-2·0 tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
-1·0
-0·5
- Collector-Emitter Saturation Voltage - V
CE(sat)
V
0
-0·5 -5·0-1·0 IC - Collector Current - A
vs
Figure 1. Figure 2.
TCS115AB
TC = -40°C TC = 25°C TC = 100°C
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-3·0 TC = -40°C
TC = 25°C TC = 100°C
-2·5
-2·0
-1·5
- Base-Emitter Saturation Voltage - V
-1·0
BE(sat)
V
IB = IC / 100 tp = 300 µs, duty cycle < 2%
-0·5
-0·5 -5·0-1·0 IC - Collector Current - A
Figure 3.
TCS115AC
PRODUCT INFORMATION
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Page 4
BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
-10
-1·0
- Collector Current - A
-0·1
C
I
SAFE OPERATING AREA
SAS115AB
BDT60 BDT60A BDT60B BDT60C
-0.01
-1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
60
50
40
30
20
TIS110AA
- Maximum Power Dissipation - W
tot
P
10
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
PRODUCT INFORMATION
4
Figure 5.
Page 5
BDT60, BDT60A, BDT60B, BDT60C
Version 1, 18.0 mm. Version 2, 17.6 mm.
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220
3,96
ø
3,71
see Note B
see Note C
0,97 0,61
10,4 10,0
1 2 3
1,70 1,07
2,74 2,34
5,28 4,88
2,95 2,54
6,1 3,5
4,70 4,20
1,32 1,23
6,6 6,0
15,90 14,55
14,1 12,7
0,64 0,41
2,90 2,40
NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version.
PRODUCT INFORMATION
VERSION 2 VERSION 1
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBE
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BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
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