Datasheet BDP 947 SMD Datasheet

Silicon NPN Transistors

BDP947, BDP949, BDP953

• For AF driver and output stages

4

• High collector current

• High current gain

1

• Low collector-emitter saturation voltage

• Complementary types: BDP948, BDP950,

BDP954 (PNP)

• Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BDP947

BDP949

BDP953

BDP947

BDP949

BDP953

1=B

2=C

3=E

4=C

-

SOT223

3

2

1 2009-05-28

Maximum Ratings

BDP947, BDP949, BDP953

Parameter

Collector-emitter voltage

Symbol Value Unit

V

BDP947

BDP949

BDP953

Collector-base voltage

V

BDP947

BDP949

BDP953

Emitter-base voltage V

Collector current I

Peak collector current, tp ≤ 10 ms I

Base current I

Peak base current, tp ≤ 10 ms I

Total power dissipation-

≤ 100 °C

T

S

P

Junction temperature T

Storage temperature T

CEO

CBO

EBO

C

CM

B

BM

tot

j

stg

45

60

100

45

60

120

5

3 A

5

200 mA

500

5 W

150 °C

-65 ... 150

V

1

Pb-containing package may be available upon special request

Thermal Resistance

Parameter

Junction - soldering point

1)

Symbol Value Unit

R

thJS

≤ 10

K/W

2 2009-05-28

BDP947, BDP949, BDP953

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0 , BDP947

C

I

= 10 mA, IB = 0 , BDP949

C

I

= 10 mA, IB = 0 , BDP953

C

Collector-base breakdown voltage

I

= 100 µA, IE = 0 , BDP947

C

I

= 100 µA, IE = 0 , BDP949

C

I

= 0 , IE = 100 µA, BDP953

C

Emitter-base breakdown voltage

I

= 10 µA, IC = 0

E

Collector-base cutoff current

V

= 45 V, IE = 0

CB

V

= 45 V, IE = 0 , TA = 150 °C

CB

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

45

60

100

45

60

120

-

5 - -

-

0.1

20

V

-

µA

Emitter-base cutoff current

V

= 4 V, IC = 0

EB

DC current gain2)

I

= 10 mA, VCE = 5 V

C

I

= 500 mA, VCE = 1 V

C

I

= 2 A, VCE = 2 V, BDP947, BDP949

C

I

= 2 A, VCE = 2 V, BDP953

C

Collector-emitter saturation voltage2)

I

= 2 A, IB = 0.2 A

C

Base emitter saturation voltage2)

I

= 2 A, IB = 0.2 A

C

AC Characteristics

Transition frequency

I

= 50 mA, VCE = 10 V, f = 100 MHz

C

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

1

For calculation of R

2

Pulse test: t < 300µs; D < 2%

please refer to Application Note Thermal Resistance

thJA

I

EBO

h

FE

V

CEsat

V

BEsat

f

T

C

cb

- - 100 nA

25

100

50

15

-

475

-

- - 0.5 V

- - 1.3

- 100 - MHz

- 25 - pF

-

3 2009-05-28

BDP947, BDP949, BDP953

DC current gain hFE = ƒ(IC)

V

= 2 V

CE

3

10

100°C

25°C

-55°C

10

2

hFE

10

-

2

1

0

10

0

10

1

10

Collector-emitter saturation voltage

I

= ƒ(V

C

4

10

mA

3

10

C

I

2

10

1

10

0

3

I

mA

C

10

4

10

0 0.1 0.2 0.3 0.4

CEsat

), hFE = 10

100°C 25°C

-50°C

V

0.6

V

CEsat

Base-emitter saturation voltage

I

= (V

C

I

10

mA

10

4

3

2

1

0

), hFE = 10

BEsat

0 0.2 0.4 0.6 0.8 1

-50°C 25°C 100°C

V

BEsat

1.3

Collector current IC = ƒ(VBE)

V

= 2 V

CE

4

10

mA

3

10

C

I

2

10

1

10

0

10

0 0.2 0.4 0.6 0.8 1

-50°C 25°C 100°C

V

BE

1.3

4 2009-05-28

BDP947, BDP949, BDP953

)

Collector cutoff current I

V

= 45 V

CB

5

10

nA

4

10

3

10

CB0

I

2

10

1

10

0

10

-1

10

0 20 40 60 80 100 120

max

CBO

= ƒ(TA)

typ

°C

T

Collector-base capacitance C

Emitter-base capacitance

500

pF

400

)

C

cb

= ƒ(V

eb

= ƒ(V

EB

CB

)

EB

350

(C

CB

C

300

250

200

150

100

50

150

0

0 4 8 12 16

A

CEB

CCB

V

VCB(V

22

EB

Total power dissipation P

5.5

W

4.5

4

t

to

3.5

P

3

2.5

2

1.5

1

0.5

0

0 15 30 45 60 75 90 105 120

= ƒ(TS)

tot

t

°C

Permissible Pulse Load R

2

10

1

10

thJS

R

thJS

= ƒ(tp)

D = 0,5 0,2

10

0

0,1 0,05 0,02 0,01 0,005 0

-1

10

150

10

-6

s

10

-5

10

-4

10

-3

10

-2

s

t

0

10

p

5 2009-05-28

Permissible Pulse Load

BDP947, BDP949, BDP953

P

totmax/PtotDC

3

10

-

totDC

P

/

2

10

totmax

P

1

10

0

10

-6

10

= ƒ(tp)

-5

10

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

-4

10

-3

10

-2

s

t

0

10

p

6 2009-05-28

Package SOT223

BDP947, BDP949, BDP953

Package Outline

Foot Print

A

±0.1

0.7

0.25MA

±0.2

6.5

±0.1

3

4

12

2.3

4.6

3.5

±0.1

1.6

0.1 MAX.

B

15˚ MAX.

±0.3

7

3

0.28

M

0...10˚

B0.25

0.5 MIN.

±0.2

3.5

±

0.0

4

Marking Layout (Example)

Packing

Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel

Pin 1

1.4 4.8 1.4

1.11.2

Manufacturer

2005, 24 CW

Date code (YYWW)

BCP52-16

Type code

8

0.3 MAX.

Pin 1

12

7.55

6.8

1.75

7 2009-05-28

BDP947, BDP949, BDP953

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

8 2009-05-28