Datasheet BDC01DRL1 Datasheet (ON Semiconductor)

Page 1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
   
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BDC01D Unit
Collector–Emitter Voltage V
CEO
Collector–Base Voltage V
CBO
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
0.5 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
2.5 20
Watts
mW/°C
Operating and Storage Junction
T emperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction to Case
R
q
JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Voltage
(IC = 10 mA, IB = 0)
V
(BR)CEO
100 Vdc
Collector Cutoff Current
(VCB = 100 V , IE = 0)
I
CBO
0.1
m
Adc
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
I
EBO
100 nAdc
Order this document
by BDC01D/D
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SEMICONDUCTOR TECHNICAL DATA

CASE 29–05, STYLE 14
TO–92 (TO–226AE)
1
2
3
Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER
Page 2
BDC01D
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V)
h
FE
40 25
400
Collector–Emitter Saturation Voltage
(1)
(IC = 1000 mA, IB = 100 mA)
V
CE(sat)
0.7 Vdc
Collector–Emitter On Voltage
(1)
(IC = 1000 mA, VCE = 1.0 V)
V
BE(on)
1.2 Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
f
T
50 MHz
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
C
ob
30 pF
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.5 0.7 1.0 2.0 3.0 5.0 7.0
10 20 30 50 70 100 200
200
100
80 60
40
h
FE
, DC CURRENT GAIN
TJ = 125°C
25°C
–55°C
VCE = 1.0 V
300 500
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECTOR–EMITTER VOL TAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1 101.0
TJ = 25°C
IC = 10 mA
0.05 0.2 0.5 2.0 5.0 20
100 mA 250 mA
50
mA
50
500 mA
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0 20020
TJ = 25°C
V
BE(on)
@ VCE = 1.0 V
V
CE(sat)
@ IC/IB = 10
5.0 10 50 100
V
BE(sat)
@ IC/IB = 10
2.0 500
Page 3
BDC01D
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
–0.8
–2.8
1.0 10010
θVB for V
BE
0.5 2.0 5.0 20 50 200
–1.2
–1.6
–2.0
–2.4
VB
, TEMPERATURE COEFFICIENT (mV/ C)
°θ
500
C, CAPACITANCE (pF)
Figure 5. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
1005020105.02.01.00.50.20.1
80 60
40
20
10
4.0
TJ = 25
°
C
C
obo
C
ibo
8.0
6.0
Figure 6. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
20070503020107.05.03.02.0
300
200
100
70
50
30
VCE = 2.0 V TJ = 25
°
C
f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
100
VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)
2 k
1.0
I
C
, COLLECTOR CURRENT (mA)
MPSW05
2.0 5.0
Figure 7. Active Region — Safe Operating Area
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
500 200
100
50
20 10
10 20 60 80 100
MPSW06
100 µs
1.0 ms
1.0 s
TC = 25°C
TA = 25°C
dcdc
1 k
DUTY CYCLE ≤ 10%
Page 4
BDC01D
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
P ACKAGE DIMENSIONS
CASE 029–05
(TO–226AE)
ISSUE AD
R
A
P
L
F
B
K
G
H
C
V
N
N
XX
SEATING PLANE
1
J
SECTION X–X
D
23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.44 5.21 B 0.290 0.310 7.37 7.87 C 0.125 0.165 3.18 4.19 D 0.018 0.022 0.46 0.56 F 0.016 0.019 0.41 0.48 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.018 0.024 0.46 0.61 K 0.500 ––– 12.70 ––– L 0.250 ––– 6.35 ––– N 0.080 0.105 2.04 2.66 P ––– 0.100 ––– 2.54 R 0.135 ––– 3.43 ––– V 0.135 ––– 3.43 –––
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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BDC01D/D
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