Datasheet BD810, BD809 Datasheet (ON Semiconductor)

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ON Semiconductor



NPN

Plastic High Power Silicon Transistor

. . . designed for use in high power audio amplifiers utilizing

complementary or quasi complementary circuits.

• DC Current Gain —

hFE = 30 (Min) @ IC = 2.0 Adc

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current Total Device Dissipation TC = 25C

Derate above 25C

Operating and Storage Junction

ОООООООООО

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

V

CEO

V

CBO

V

EBO

I

C

I

B

P

D

TJ, T

stg

ÎÎÎ

Symbol

θ

JC

Value

5.0

6.0

720

–55 to +150

ÎÎÎ

80 80

10

90

Max

1.39

Unit

Vdc Vdc Vdc Adc Adc

Watts

mW/C

C

ÎÎ

Unit

C/W

BD809

PNP

BD810

10 AMPERE

POWER TRANSISTORS

PNP SILICON 60, 80 VOL TS

90 WATTS

4

STYLE 1:

PIN 1. BASE

2. COLLECTOR

1

2

3

CASE 221A–09

3. EMITTER

4. COLLECTOR

TO–220AB

 Semiconductor Components Industries, LLC, 2002

April, 2002 – Rev. 1

1 Publication Order Number:

BD809/D

BD809 BD810

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ELECTRICAL CHARACTERISTICS (T

= 25C unless otherwise noted)

C

Characteristic

Collector–Emitter Sustaining Voltage*

ОООООООООООООООО

(IC = 0.1 Adc, IB = 0)

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

ОООООООООООООООО

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

DC Current Gain

ОООООООООООООООО

(IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 V)

ОООООООООООООООО

Collector–Emitter Saturation Voltage*

(IC = 3.0 Adc, IB = 0.3 Adc)

ОООООООООООООООО

Base–Emitter On Voltage*

(IC = 4.0 Adc, VCE = 2.0 Vdc)

Current–Gain Bandwidth Product

ОООООООООООООООО

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

*Pulse Test: Pulse Width  300 µs, Duty Cycle  2.0%.

.5 ms

10

5 ms

3

1 ms

dc

1 ms

1

, COLLECTOR CURRENT (AMP)

0.3

C

I

0.1 1

3 10 30 100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region DC Safe Operating Area

(see Note 1)

Symbol

BV

CEO

ÎÎÎÎ

I

CBO

ÎÎÎÎ

I

EBO

h

FE

ÎÎÎÎ

V

CE(sat)

ÎÎÎÎ

V

BE(on)

f

T

ÎÎÎÎ

Min

ÎÎ

80

—

ÎÎ

—

ÎÎ

30 15

ÎÎ

—

ÎÎ

—

1.5

ÎÎ

Max

—

ÎÎÎ

—

1.0

ÎÎÎ

2.0

ÎÎÎ

— —

ÎÎÎ

1.1

ÎÎÎ

1.6

—

ÎÎÎ

ÎÎ

90

80

70

60

50

40

30

20

, POWER DISSIPATION (WATTS)

D

P

10

0

0 25 50 100 125 150 175

75

T

, CASE TEMPERATURE (°C)

C

Figure 2. Power–Temperature Derating Curve

Unit

Vdc

mAdc

Vdc

MHz

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2

BD809 BD810

NPN BD809

500

T

= 150°C

J

200

100

, DC CURRENT GAIN

FE

h

50

20

10

5.0

25°C

-55°C

VCE = 2.0 V

0.50.2 101.0 2.0

IC, COLLECTOR CURRENT (AMP)

5.0 0.50.2 101.0 2.0 205.0

Figure 3. DC Current Gain

2.0

1.8

1.6

1.4

1.2 IC = 1.0 A

4.0 A 8.0 A

0

5.0 100 5000

10

20 50

IB, BASE CURRENT (mA)

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

1.0

0.8

0.6

0.4

0.2

T

Figure 4. Collector Saturation Region

PNP BD810

500

T

200

100

50

, DC CURRENT GAIN

20

FE

h

10

20

= 25°C

J

20001000200 500 5000

5.0

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0

5.0 100

25°C

-55°C

VCE = 2.0 V

IC = 1.0 A

10

= 150°C

J

IC, COLLECTOR CURRENT (AMP)

4.0 A 8.0 A

20 50 20001000200 500

IB, BASE CURRENT (mA)

T

= 25°C

J

2.8

T

2.4

2.0

1.6

1.2

V, VOLTAGE (VOLTS)

0.8

0.4

0

0.2 0.5 2.0 20101.0 5.0

= 25°C

J

V

= IC/IB = 10

BE(sat)

VBE @ VCE = 2.0 V

V

@ IC/IB = 10

CE(sat)

IC, COLLECTOR CURRENT (AMP)

2.8

2.4

2.0

1.6

1.2

V, VOLTAGE (VOLTS)

V

0.8

0.4 V

0

0.2 0.5 2.0 20101.0 5.0

Figure 5. “On” Voltages

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T

= 25°C

J

@ IC/IB = 10

BE(sat)

VBE @ VCE = 2.0 V

@ IC/IB = 10

CE(sat)

IC, COLLECTOR CURRENT (AMP)

1.0

0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

THERMAL RESISTANCE

0.03

0.02

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.01

D = 0.5

0.05

0.02

0.01

0.02 0.03

BD809 BD810

0.2

0.1 P

SINGLE

θJC(t) = r(t) θ

D CURVES APPLY FOR POWER

SINGLE PULSE

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 20 30 50 100 200 300 100 t, PULSE WIDTH (ms)

PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

- TC = P

JC

1

(pk) θJC

PULSE

(t)

Figure 6. Thermal Response

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

500

Note 1:

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – V

CE

limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 1 is based on T

= 150C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T

J(pk)

 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

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Notes

BD809 BD810

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5

Notes

BD809 BD810

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6

BD809 BD810

PACKAGE DIMENSIONS

TO–220

CASE 221A–09

ISSUE AA

SEATING

–T–

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R J

G

D

N

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04

MILLIMETERSINCHES

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BD809 BD810

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make

changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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For additional information, please contact your local Sales Representative.

BD809/D

8