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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD809
DESCRIPTION
·With TO-220C package
·Complement to type BD810
·DC current gain
= 30 (Min) @ IC = 2.0 Adc
: h
FE
APPLICATIONS
·Designed for use in high power audio
amplifiers utilizing complementary or
quasi complementary circuits.
PINNING
PIN DESCRIPTION
·
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 6 A
PD Total power dissipation TC=25℃ 90 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 5 V
Storage temperature -55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.39
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD809
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=10V;f=1.0MHz 1.5 MHz
Collector-emitter sustaining voltage IC=0.1A; IB=0 80 V
Collector-emitter saturation voltage IC=3 A;IB=0.3 A 1.1 V
Base-emitter voltage IC=4A ; VCE=2V 1.6 V
Collector cut-off current VCB=80V; IE=0 1.0 mA
Emitter cut-off current VEB=5V; IC=0 2.0 mA
DC current gain IC=2A ; VCE=2V 30
DC current gain IC=4A ; VCE=2V 15
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Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD809
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
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