Page 1
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi
complementary circuits.
• DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc
• BD802 is complementary with BD 795, 797, 799, 801
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
100
Vdc
Collector–Base Voltage
V
CBO
100
Vdc
Emitter–Base Voltage
V
EBO
5.0
Vdc
Collector Current
I
C
8.0
Adc
Base Current
I
B
3.0
Adc
Total Device Dissipation TC = 25_C
Derate above 25_C
P
D
65
522
Watts
mW/_C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
JC
1.92
_
C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage*
(IC = 0.05 Adc, IB = 0)
BV
CEO
100
—
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
I
CBO
—
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
I
EBO
—
1.0
mAdc
DC Current Gain
(IC = 1.0 A, VCE = 2.0 V)
(IC = 3.0 A, VCE = 2.0 V)
h
FE
30
15
—
—
Collector–Emitter Saturation Voltage*
(IC = 3.0 Adc, IB = 0.3 Adc)
V
CE(sat)
—
1.0
Vdc
Base–Emitter On Voltage*
(IC = 3.0 Adc, VCE = 2.0 Vdc)
V
BE(on)
—
1.6
Vdc
Current–Gain — Bandwidth Product
(IC = 0.25 Adc, VCE = 10 Vdc,
f = MHz)
f
T
3.0
—
MHz
*Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD802/D
Motorola, Inc. 1995
8 AMPERE
POWER TRANSISTORS
PNP SILICON
100 VOLTS
65 WATTS
CASE 221A–06
TO–220AB
REV 7
Page 2
BD802
2
Motorola Bipolar Power Transistor Device Data
Figure 1. Active Region Safe Operating Area
10
1
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5
0.5
5 10 50 100
0.05
I
C
, COLLECTOR CURRENT (AMP)
TJ = 150°C
dc
5 ms
100 µs
1
0.1
BD802
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power–temperature
derating must be observed for both steady state and pulse
power conditions.
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
0
0.05
1.6
1.2
0.8
0.4
1.0 2.0 10 70 500
IC = 10 mA 100 mA 1.0 A
0.1 100205.0
TJ = 25°C
3.0 300.07 300200507.00.2 0.3 0.5 0.7
3.0 A
5.0
0.01
Figure 3. Normalized DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.1
0.02 0.03 0.05 0.1 0.2 0.3 1.0 4.0
2.0
0.7
0.5
0.2
1.8
Figure 4. “On” Voltage
IC, COLLECTOR CURRENT (AMPS)
0.8
0.6
0.4
0.2
0
V
BE(sat)
@ IC/IB = 10
V, VOLTAGE (VOLTS)
3.0
1.0
25°C
–55°C
VCE = 2.0 V
150°C
h
FE
, NORMALIZED DC CURRENT GAIN
0.3
0.5 0.7 3.02.0 0.01 0.02 0.03 0.1 0.2 0.3 1.0 5.00.5 3.02.0
VBE @ VCE = 2.0 V
1.6
1.4
1.2
1.0
1.7
TJ = 25°C
V
CE(sat)
@ IC/IB = 10
Figure 5. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.5
0.3
0.2
0.1
0.5
0.03
0.02
0.02 0.03
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.01
0.07 0.7 7.0 70 700
D = 0 (SINGLE PULSE)
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BD802
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
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BD802
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Motorola Bipolar Power Transistor Device Data
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BD802/D
*BD802/D*
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