Datasheet BD791T, BD791 Datasheet (ON Semiconductor)

Page 1
1
Motorola Bipolar Power Transistor Device Data
    
. . . designed for low power audio amplifier and low–current, high speed switching applications.
High Collector–Emitter Sustaining Voltage — V
= 100 Vdc (Min)
High DC Current Gain @ IC = 200 mAdc hFE = 40–250
Low Collector–Emitter Saturation Voltage — V
CE(sat)
= 0.5 Vdc (Max) @ IC = 500 mAdc
High Current Gain — Bandwidth Product — fT = 40 MHz (Min) @ IC = 100 mAdc)
*MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector–Emitter V oltage
V
CEO
100
Vdc
Collector–Base Voltage
V
CB
100
Vdc
Emitter–Base Voltage
V
EBO
6.0
Vdc
ОООООООООО
Î
Collector Current — Continuous
— Peak
ÎÎÎ
Î
I
C
ÎÎÎÎ
Î
4.0
8.0
Î
Î
Adc
Base Current
I
B
1.0
Adc
ОООООООООО
Î
Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎ
Î
P
D
ÎÎÎÎ
Î
15
0.12
Î
Î
Watts W/_C
Operating and Storage Junction
T emperature Range
TJ,T
stg
–65 to +150
_
C
ООООООООООООООООООООО
Î
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
8.34
_
C/W
16
12
0
20 40 60 100 120 140 160
Figure 1. Power Derating
T, TEMPERATURE (°C)
80
4.0
8.0
1.6
1.2
0
0.4
0.8
T
A
T
C
P
D
, POWER DISSIPATION (WATTS)
P
D
, POWER DISSIPATION (WATTS)
Preferred devices are Motorola recommended choices for future use and best overall value.

SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD791/D
Motorola, Inc. 1998

Motorola Preferred Device
4 AMPERE
POWER TRANSISTOR
SILICON
100 VOLTS
15 WATTS
CASE 77–09
TO–225AA TYPE
Page 2
BD791
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
ÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
Unit
OFF CHARACTERISTICS
ООООООООООООООООООООО
Î
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎ
Î
V
CEO(sus)
ÎÎ
Î
100
ÎÎ
Î
ÎÎÎ
ÎÎ
Î
Vdc
ООООООООООООООООООООО
Î
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ÎÎÎ
Î
I
CEO
ÎÎ
Î
ÎÎ
Î
100
ÎÎ
Î
µAdc
ООООООООООООООООООООО
Î
Collector Cutoff Current
(VCE = 100 Vdc, V
BE(off)
= 1.5 Vdc)
(VCE = 50 Vdc, V
BE(off)
= 1.5 Vdc, TC = 125_C)
ÎÎÎ
Î
I
CEX
ÎÎ
Î
— —
ÎÎ
Î
1.0
0.1
ÎÎ
Î
µAdc
mAdc
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
I
EBO
1.0
µAdc
ON CHARACTERISTICS (1)
ООООООООООООООООООООО
Î
ООООООООООООООООООООО
Î
ООООООООООООООООООООО
Î
DC Current Gain
(IC = 200 mAdc, VCE = 3 0 Vdc) (IC = 1.0 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc)
ÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎ
Î
h
FE
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
40 20 10
5.0
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
250
— — —
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ООООООООООООООООООООО
Î
ООООООООООООООООООООО
Î
ООООООООООООООООООООО
Î
Collector Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (IC = 2.0 Adc, IB = 200 mAdc) (IC = 4.0 Adc, IB = 800 mAdc)
ÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎ
Î
V
CE(sat)
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
— — — —
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
0.5
1.0
2.5
3.0
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
Vdc
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc)
V
BE(sat)
1.8
Vdc
Base–Emitter On Voltage (IC = 200 mAdc, VCE = 3.0 Vdc)
V
BE(on)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz)
f
T
40
MHz
ООООООООООООООООООООО
Î
Output Capacitance
(VCB = 10 Vdc, IC = 0, f = 0.1 MHz)
ÎÎÎ
Î
C
ob
ÎÎ
Î
ÎÎ
Î
50
ÎÎ
Î
pF
ООООООООООООООООООООО
Î
Small–Signal Current Gain
(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎ
Î
h
fe
ÎÎ
Î
10
ÎÎ
Î
ÎÎ
Î
*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
Figure 2. Switching Time Test Circuit
500
0.04
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (ns)
70
30 20
5.0
0.06 0.2 0.4 0.6
td @ V
BE(off)
= 5.0 V
TJ = 25°C VCC = 30 V IC/IB = 10
+ 11 V
0
+ 30 V
SCOPE
R
B
– 4 V
tr, tf
v
10 ns
DUTY CYCLE = 1.0%
R
C
t
r
7.0
10
1.0 4.0
D1 MUST BE FAST RECOVERY TYPE, eg
MBR340 USED ABOVE IB
[
100 mA
MSD6100 USED BELOW IB
[
100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
25 µs
– 9.0 V
D
1
51
RB AND RC VARIED TO OBT AIN DESIRED CURRENT LEVELS
V
CC
300 200
100
50
0.1 2.0
Page 3
BD791
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
R
θ
JC(t)
= r(t) R
θ
JC
R
θ
JC
= 8.34°C/W MAX
D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
R
θ
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
D = 0.5
0 (SINGLE PULSE)
0.2
0.05
0.1
0.02
0.01
r(t), TRANSIENT THERMAL RESIST ANCE
(NORMALIZED)
I
C
, COLLECTOR CURRENT (AMP)
Figure 5. Active Region Safe Operating Area
10
1.0
VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)
5.0
2.0
0.5
0.01
2.0 5.0 10 50 100
BONDING WIRE LIMITED THERMALL Y LIMITED @ TC = 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.05
0.02 20
CURVES APPLY BELOW RATED V
CEO
TJ = 150°C
dc
5.0 ms
1.0 ms 500 µs
100 µs
1.0
0.1
30 703.0 7.0
There are two limitations on the power handling ability of a transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T
J(pk)
v
150_C, T
J(pk)
may be calculated from the data in Fig­ure 4. At high case temperatures, thermal limitations will re­duce the power that can be handled to values less than the limitations imposed by second breakdown.
0.04
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (ns)
0.06 0.1 0.2 0.6 1.0 2.0 4.0
TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = I
B2
t
s
0.4
t
f
2000
20
700
100
200
1000
500 300
30
50
70
200
1.0
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
10
2.0 3.0 5.0 7.0 20 30 10010
C, CAPACITANCE (pF)
100
70 50
30
TJ = 25°C
C
ib
C
ob
20
50 70
Page 4
BD791
4
Motorola Bipolar Power Transistor Device Data
500
0.04
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.1 0.2 0.4 0.6 1.0 2.0
100
50 30
300
70
h
FE
, DC CURRENT GAIN
TJ = 150°C
25°C
–55°C
200
20
4.0
VCE = 1.0 V VCE = 3.0 V
0.06
5.0
7.0
1.4
0.04 IC, COLLECTOR CURRENT (AMP)
0.2 0.6 2.0 4.0
0.6
0.4
0
TJ = 25°C
V
BE(sat)
@ IC/IB = 10
V
CE(sat)
V, VOLTAGE (VOLTS)
Figure 9. “On” Voltage
0.1 1.00.4
1.0
0.8
V
BE(on)
@ VCE = 3.0 V
0.06
1.2
0.2
IC/IB = 10
5.0
+2.5
Figure 10. Temperature Coefficient
IC, COLLECTOR CURRENT (AMP)
V
, TEMPERATURE COEFFICIENTS (mV/ C)
°θ
+2.0 +1.5
+0.5
0
–0.5 –1.0
–1.5 –2.0
–2.5
θVB FOR V
BE
*
θ
VC
FOR V
CE(sat)
*APPLIES FOR IC/IB
h
FE/3
+1.0
25
°
C to 150°C
– 55°C to 25°C
25°C to 150°C
– 55°C to 25°C
0.04 0.2 0.6 2.0 4.00.1 1.00.40.06
Page 5
BD791
5
Motorola Bipolar Power Transistor Device Data
P ACKAGE DIMENSIONS
CASE 77–09
TO–225AA TYPE
ISSUE W
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
–A–
M
K
F
C
Q
H
V
G
S
D
J
R
U
132
2 PL
M
A
M
0.25 (0.010) B
M
M
A
M
0.25 (0.010) B
M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP 5 TYP Q 0.148 0.158 3.76 4.01 R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93 V 0.040 ––– 1.02 –––
__
Page 6
BD791
6
Motorola Bipolar Power Transistor Device Data
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