Datasheet BD788, BD787 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

    

. . . designed for lower power audio amplifier and low current, high–speed switching applications.

• Low Collector–Emitter Sustaining Voltage — V

CEO(sus)

60 Vdc (Min) — BD787, BD788

• High Current–Gain — Bandwidth Product — fT = 50 MHz (Min) @ IC = 100 mAdc

• Collector–Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc

MAXIMUM RATINGS

Rating

Symbol

BD787 BD788

Unit

Collector–Emitter Voltage

V

CEO

60

Vdc

Collector–Base Voltage

V

CBO

80

Vdc

Emitter–Base Voltage

V

EBO

6.0

Vdc

Collector Current — Continous

— Peak

I

C

4.0

8.0

Adc Adc

Base Current

I

B

1.0

Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25_C

P

D

15

0.12

Watts W/_C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–65 to +150

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

8.34

_

C/W

16

12

0

20 40 60 100 120 140 160

Figure 1. Power Derating

T, TEMPERATURE (°C)

P

D

, POWER DISSIPATION (WATTS)

80

4.0

8.0

1.6

1.2

0

0.4

0.8

P

D

, POWER DISSIPATION (WATTS)

T

A

T

C



SEMICONDUCTOR TECHNICAL DATA

Order this document

by BD787/D

 Motorola, Inc. 1995

 

4 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60 VOLTS

15 WATTS

CASE 77–08

TO–225AA TYPE





REV 7

 

2

Motorola Bipolar Power Transistor Device Data

*ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 10 mAdc, IB = 0)

ÎÎÎÎ

V

CEO(sus)

60

—

ÎÎÎ

Vdc

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0)

ÎÎÎÎ

I

CEO

—

100

ÎÎÎ

µAdc

Collector Cutoff Current

(VCE = 80 Vdc, V

BE(off)

= 1.5 Vdc)

(VCE = 40 Vdc, V

BE(off)

= 1.5 Vdc, TC = 125°C)

ÎÎÎÎ

I

CEX

— —

1.0

0.1

ÎÎÎ

µAdc

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

ÎÎÎÎ

I

EBO

—

1.0

ÎÎÎ

µAdc

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 200 mAdc, VCE = 3.0 Vdc) (IC = 1.0 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

h

FE

40 25 20

5.0

250

— — —

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (IC = 2.0 Adc, IB = 200 mAdc) (IC = 4.0 Adc, IB = 800 mAdc)

ÎÎÎÎ

V

CE(sat)

— — — —

0.4

0.6

0.8

2.5

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 200 mAdc)

ÎÎÎÎ

V

BE(sat)

—

2.0

ÎÎÎ

Vdc

Base–Emitter On Voltage

(IC = 2.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

V

BE(on)

—

1.8

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz)

ÎÎÎÎ

f

T

50

—

ÎÎÎ

MHz

Output Capacitance

(VCB = 10 Vdc, IC = 0) BD787 (f = 0.1 MHz) BD788

ÎÎÎÎ

C

ob

— —

50 70

ÎÎÎ

pF

Small–Signal Current Gain

(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

h

fe

10

—

ÎÎÎ

—

*Indicates JEDEC Registered Data (1) Pulse Test; Pulse Width v 300 µs, Duty Cycle v 2.0%.

Figure 2. Switching Time Test Circuit

500

0.04

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (ns)

70

30 20

5.0

0.06 0.2 0.4 0.6

td @ V

BE(off)

= 5.0 V

VCC = 30 V IC/IB = 10 TJ = 25°C

+ 11 V

0

+ 30 V

SCOPE

R

B

– 4 V

tr, tf

v

10 ns

DUTY CYCLE = 1.0%

R

C

t

r

7.0

10

1.0 4.0

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

[

100 mA

MSD6100 USED BELOW IB

[

100 mA

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

25 µs

– 9.0 V

D

1

51

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

V

CC

BD787 (NPN) BD788 (PNP)

300 200

100

50

0.1 2.0

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Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200

R

θ

JC(t)

= r(t) R

θ

JC

R

θ

JC

= 8.34

°

C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

D = 0.5

0 (SINGLE PULSE)

0.2

0.05

0.1

0.02

0.01

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

Figure 5. Active Region Safe Operating Area

10

1.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

0.5

0.01

2.0 5.0 10 50 100

BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25

°

C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

0.05

0.02

I

C

, COLLECTOR CURRENT (AMP)

BD787 (NPN) BD788 (PNP)

20

CURVES APPLY BELOW RATED V

CEO

TJ = 150°C

dc

5.0 ms

1.0 ms 500 µs

100 µs

1.0

0.1

30 70

60 V

3.0 7.0

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

J(pk)

= 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1 0% provided T

J(pk)

v

150_C, T

J(pk)

may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

0.04

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (ns)

0.06 0.1 0.2 0.6 1.0 2.0 4.0

VCC = 30 V IC/IB = 10 IB1 = I

B2

TJ = 25

°

C

t

s

0.4

t

f

(NPN) (PNP)

2000

20

700

100

200

1000

500 300

30

50

70

200

1.0

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

10

2.0 3.0 5.0 7.0 20 30 10010

C, CAPACITANCE (pF)

100

70 50

30

TJ = 25°C

C

ib

C

ob

(NPN) (PNP)

20

50 70

 

4

Motorola Bipolar Power Transistor Device Data

400

0.04

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.1 0.2 0.4 0.6 1.0 2.0

100

50

30

300

70

h

FE

, DC CURRENT GAIN

TJ = 150°C

25°C

–55°C

200

20

4.0

NPN

BD787

NPN

BD788

VCE = 1.0 V VCE = 3.0 V

0.06

200

0.04 IC, COLLECTOR CURRENT (AMP)

0.1 0.2 0.4 0.6 1.0 2.0

50

20

100

30

h

FE

, DC CURRENT GAIN

TJ = 150°C

25°C

–55°C

70

10

4.0

VCE = 1.0 V VCE = 3.0 V

0.06

2.0

0.04 IC, COLLECTOR CURRENT (AMP)

0.2 0.6 2.0 4.0

0.8

0.4

0

TJ = 25°C

V

BE(sat)

@ IC/IB = 10

V

CE(sat)

@ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 9. “On” Voltages

0.1 1.00.4

1.6

1.2

V

BE(on)

@ VCE = 3.0 V

2.0

IC, COLLECTOR CURRENT (AMP)

0.8

0.4

0

TJ = 25°C

V

BE(sat)

@ IC/IB = 10

V

CE(sat)

@ IC/IB = 10

V, VOLTAGE (VOLTS)

1.6

1.2

VBE @ VCE = 3.0 V

0.06 0.04 0.2 0.6 2.0 4.00.1 1.00.40.06

+2.5

Figure 10. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

V

, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+2.0 +1.5

+0.5

0 –0.5 –1.0 –1.5 –2.0 –2.5

θ

VB

FOR V

BE

*

θ

VC

FOR V

CE(sat)

*APPLIES FOR IC/IB

≤

h

FE/3

+1.0

25

°

C to 150°C

– 55°C to 25°C

25°C to 150°C

– 55°C to 25°C

0.04 0.2 0.6 2.0 4.00.1 1.00.40.06

+2.5

IC, COLLECTOR CURRENT (AMP)

V

, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+2.0 +1.5

+0.5

0

–0.5 –1.0

–1.5 –2.0 –2.5

θ

VB

FOR V

BE

*

θ

VC

FOR V

CE(sat)

*APPLIES FOR IC/IB

≤

h

FE/3

+1.0

25

°

C to 150°C

– 55°C to 25°C

25°C to 150°C

– 55°C to 25°C

0.04 0.2 0.6 2.0 4.00.1 1.00.40.06

 

5

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A–

M

K

F

C

Q

H

V

G

S

D

J

R

U

1 32

2 PL

M

A

M

0.25 (0.010) B

M

A

M

0.25 (0.010) B

M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP 5 TYP Q 0.148 0.158 3.76 4.01 R 0.045 0.055 1.15 1.39 S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93 V 0.040 ––– 1.02 –––

_ _

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6

Motorola Bipolar Power Transistor Device Data

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BD787/D

*BD787/D*

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