Datasheet BD745C, BD745B, BD745A, BD745 Datasheet (Power Innovations)

BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the

BD746 Series

SOT-93 PACKAGE

(TOP VIEW)

● 115 W at 25°C Case Temperature

B

1

● 20 A Continuous Collector Current

● 25 A Peak Collector Current

C

2

● Customer-Specified Selections Available

E

Pin 2 is in electrical contact with the mounting base.

3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

BD745

Collector-base voltage (I

Collector-emitter voltage (I

E

= 0)

B

Emitter-base voltage V Continuous collector current I Peak collector current (see Note 1) I Continuous base current I Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P Unclamped inductive load energy (see Note 4) ½LI Operating free air temperature range T Operating junction temperature range T Storage temperature range T Lead temperature 3.2 mm from case for 10 seconds T

NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I = 0, RS = 0.1 Ω, VCC = 20 V.

V

BE(off)

BD745A BD745B BD745C BD745 BD745A BD745B BD745C

V

CBO

CEO

EBO

C

CM

B tot tot

A

stg

L

C

j

2

B(on)

50 70 90

110

45 60 80

100

5 V 20 A 25 A

7 A

115 W

3.5 W 90 mJ

-65 to +150 °C

-65 to +150 °C 260 °C

= 0.4 A, RBE = 100 Ω,

MDTRAA

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BD745

V

(BR)CEO

Collector-emitter breakdown voltage

= 30 mA IB = 0 (see Note 5)

I

C

BD745A BD745B BD745C

I

CBO

I

CEO

I

EBO

h

V

CE(sat)

V

|hfe|

Collector cut-off current

Collector cut-off current Emitter cut-off current

Forward current

FE

transfer ratio Collector-emitter

saturation voltage Base-emitter

BE

voltage Small signal forward

h

fe

current transfer ratio Small signal forward current transfer ratio

V

= 50 V

CE

= 70 V

V

CE

= 90 V

V

CE

= 110 V

V

CE

= 50 V

V

CE

= 70 V

V

CE

= 90 V

V

CE

= 110 V

V

CE

VCE= 30 V

= 60 V

V

CE

= 5 V IC= 0 0.5 mA

V

EB

V

= 4 V

CE

= 4 V

V

CE

= 4 V

V

CE

IB = 0.5 A

= 5 A

I

B

VCE = 4 V

= 4 V

V

CE

= 10 V IC= 1 A f = 1 kHz 25

V

CE

= 10 V IC= 1 A f = 1 MHz 5

V

CE

V

BE

V

BE

V

BE

V

BE

V

BE

V

BE

V

BE

V

BE

I

B

I

B

I

C

I

C

I

C

I

C

I

C

I

C

I

C

= 0 = 0 = 0 = 0 = 0 = 0 = 0

= 0 = 0 = 0

= 1 A = 5 A = 20 A = 5 A = 20 A = 5 A = 20 A

T

= 125°C

C

= 125°C

T

C

= 125°C

T

C

= 125°C

T

C

(see Notes 5 and 6)

BD745 BD745A BD745B BD745C BD745 BD745A BD745B BD745C BD745/745A BD745B/745C

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

45 60 80

100

40 20

V

0.1

0.1 mA

5 5 5 5

0.1

mA

150

5

1 3 1 3

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R R

Junction to case thermal resistance 1.1 °C/W

θJC

Junction to free air thermal resistance 35.7 °C/W

θJA

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Delay time

t

d

t

Rise time 350 ns

r

Storage time 500 ns

t

s

Fall time 400 ns

t

f

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

I

C

V

BE(off)

= 5 A

= -4.2 V

I

B(on)

R

= 6 Ω

L

= 0.5 A

†

I

= -0.5 A

B(off)

= 20 µs, dc ≤ 2%

t

p

PRODUCT INFORMATION

MIN TYP MAX UNIT

20 ns

2

BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

AUGUST 1978 - REVISED MARCH 1997

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

100

- DC Current Gain

FE

h

VCE = 4 V tp = 300 µs, duty cycle < 2%

10

0·1 1·0 10 100

IC - Collector Current - A

TC = 125°C TC = 25°C TC = -55°C

Figure 1. Figure 2.

TCS635AE

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

10

I

C

= 10

I

B

tp = 300µs, duty cycle < 2%

1·0

0·1

- Collector-Emitter Saturation Voltage - V

CE(sat)

V

0·01

0·1 1·0 10 100

IC - Collector Current - A

TCS635AF

TC = -55°C TC = 25°C TC = 125°C

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

100

10

1·0

- Collector Current - A

C

I

0·1

BD745 BD745A BD745B

0·01

1·0 10 100 1000

BD745C

VCE - Collector-Emitter Voltage - V

SAS635AC

tp = 1 ms, d = 0.1 = 10%

tp = 10 ms, d = 0.1 = 10%

tp = 50 ms, d = 0.1 = 10%

DC Operation

PRODUCT INFORMATION

Figure 3.

3

BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

120

100

80

60

40

- Maximum Power Dissipation - W

tot

P

20

vs

CASE TEMPERATURE

TIS635AB

0

0 25 50 75 100 125 150

TC - Case Temperature - °C

Figure 4.

PRODUCT INFORMATION

4

BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

MECHANICAL DATA

SOT-93 3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

SOT-93

4,1

ø

4,0

12,2 MAX.

1,30 1,10

1 2

15,2 14,7

11,1 10,8

4,90 4,70

1,37 3,95 4,15

16,2 MAX.

31,0 TYP.

18,0 TYP.

3

1,17

0,78 0,50

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

PRODUCT INFORMATION

MDXXAW

5

BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

PRODUCT INFORMATION

6