Datasheet BD744C, BD744B, BD744A, BD744 Datasheet (Power Innovations)

Page 1
BD743 Series
90 W at 25°C Case Temperature
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
15 A Continuous Collector Current
20 A Peak Collector Current
Customer-Specified Selections Available
B C E
1 2 3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BD744
Collector-base voltage (I
Collector-emitter voltage (I
E
= 0)
= 0)
B
Emitter-base voltage V Continuous collector current I Peak collector current (see Note 1) I Continuous base current I Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P Unclamped inductive load energy (see Note 4) ½LI Operating free air temperature range T Operating junction temperature range T Storage temperature range T Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I = 0, RS = 0.1, VCC = -20 V.
V
BE(off)
BD744A BD744B BD744C BD744 BD744A BD744B BD744C
V
V
CBO
CEO
EBO
C
CM
B tot tot
A
stg
L
C
j
2
B(on)
MDTRACA
-50
-70
-90
-110
-45
-60
-80
-100
-5 V
-15 A
-20 A
-5 A
90 W
2 W
90 mJ
-65 to +150 °C
-65 to +150 °C
-65 to +150 °C 260 °C
= -0.4 A, RBE = 100 Ω,
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
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BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BD744
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
V
CE(sat)
V
h
|hfe|
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current Emitter cut-off current
Forward current
FE
transfer ratio Collector-emitter
saturation voltage Base-emitter
BE
voltage Small signal forward
fe
current transfer ratio Small signal forward current transfer ratio
= -30 mA IB = 0 (see Note 5)
I
C
V
= -50 V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
V
CE
VCE= -30 V
= -60 V
V
CE
= -5 V IC= 0 -0.5 mA
V
EB
V
= -4 V
CE
= -4 V
V
CE
= -4 V
V
CE
IB = -0.5 A
= -5 A
I
B
VCE = -4 V
= -4 V
V
CE
= -10 V IC= -1 A f = 1 kHz 25
V
CE
= -10 V IC= -1 A f = 1 MHz 5
V
CE
V
BE
V
BE
V
BE
V
BE
V
BE
V
BE
V
BE
V
BE
I
= 0
B
= 0
I
B
I
= -1 A
C
= -5 A
I
C
= -15 A
I
C
I
= -5 A
C
= -15 A
I
C
I
= -5 A
C
= -15 A
I
C
= 0 = 0 = 0 = 0 = 0 = 0 = 0 = 0
T
= 125°C
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
BD744A BD744B BD744C BD744 BD744A BD744B BD744C BD744 BD744A BD744B BD744C BD744/744A BD744B/744C
-45
-60
-80
-100
40 20
5
-0.1
-0.1
-0.1
-0.1
-5
-5
-5
-5
-0.1
-0.1
150
-1
-3
-1
-3
V
mA
mA
V
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R R
Junction to case thermal resistance 1.4 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Delay time
t
d
t
Rise time 120 ns
r
Storage time 600 ns
t
s
Fall time 300 ns
t
f
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
= -5 A
I
C
V
BE(off)
= 4.2 V
I
B(on)
R
= 6
L
= -0.5 A
I
= 0.5 A
B(off)
= 20 µs, dc 2%
t
p
PRODUCT INFORMATION
MIN TYP MAX UNIT
20 ns
2
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BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
VCE = -4 V tp = 300 µs, duty cycle < 2%
100
- DC Current Gain
FE
h
10
-0·1 -1·0 -10 -100 IC - Collector Current - A
TC = 125°C TC = 25°C TC = -55°C
Figure 1. Figure 2.
TCS638AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-10 I
C
= 10
I
B
tp = 300µs, duty cycle < 2%
-1·0
-0·1
- Collector-Emitter Saturation Voltage - V
CE(sat)
V
-0·01
-0·1 -1·0 -10 -100 IC - Collector Current - A
TCS638AB
TC = -55°C TC = 25°C TC = 125°C
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
-10
-1·0
- Collector Current - A
C
I
-0·1 BD744
BD744A BD744B
-0·01
-1·0 -10 -100 -1000
BD744C
VCE - Collector-Emitter Voltage - V
SAS638AA
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
tp = 50 ms, d = 0.1 = 10%
DC Operation
PRODUCT INFORMATION
Figure 3.
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BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
100
90
80
70
60
50
40
30
- Maximum Power Dissipation - W
tot
20
P
10
vs
CASE TEMPERATURE
TIS637AA
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 4.
PRODUCT INFORMATION
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Page 5
BD744, BD744A, BD744B, BD744C
Version 1, 18.0 mm. Version 2, 17.6 mm.
PNP SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220
3,96
ø
3,71
see Note B
see Note C
0,97 0,61
10,4 10,0
1 2 3
1,70 1,07
2,74 2,34
5,28 4,88
2,95 2,54
6,1 3,5
4,70 4,20
1,32 1,23
6,6 6,0
15,90 14,55
14,1 12,7
0,64 0,41
2,90 2,40
NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version.
PRODUCT INFORMATION
VERSION 2 VERSION 1
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBE
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BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
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