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● Designed for Complementary Use with the
BD744 Series
● 90 W at 25°C Case Temperature
BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 15 A Continuous Collector Current
● 20 A Peak Collector Current
● Customer-Specified Selections Available
B
C
E
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BD743
Collector-base voltage (I
Collector-emitter voltage (I
E
= 0)
= 0)
B
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating free air temperature range T
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
= 0, RS = 0.1 Ω, VCC = 20 V.
V
BE(off)
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
V
V
CBO
CEO
EBO
C
CM
B
tot
tot
A
stg
L
C
j
2
B(on)
MDTRACA
50
70
90
110
45
60
80
100
5 V
15 A
20 A
5 A
90 W
2 W
90 mJ
-65 to +150 °C
-65 to +150 °C
-65 to +150 °C
250 °C
= 0.4 A, RBE = 100 Ω,
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
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BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BD743
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
V
CE(sat)
V
h
|hfe|
Collector-emitter
breakdown voltage
Collector cut-off
current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
BE
voltage
Small signal forward
fe
current transfer ratio
Small signal forward
current transfer ratio
= 30 mA IB = 0 (see Note 5)
I
C
V
= 50 V
CE
= 70 V
V
CE
= 90 V
V
CE
= 110 V
V
CE
= 50 V
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 110 V
V
CE
VCE= 30 V
= 60 V
V
CE
= 5 V IC= 0 0.5 mA
V
EB
V
= 4 V
CE
= 4 V
V
CE
= 4 V
V
CE
IB = 0.5 A
= 5 A
I
B
VCE = 4 V
= 4 V
V
CE
= 10 V IC= 1 A f = 1 kHz 25
V
CE
= 10 V IC= 1 A f = 1 MHz 5
V
CE
V
BE
V
BE
V
BE
V
BE
V
BE
V
BE
V
BE
V
BE
I
B
I
B
I
C
I
C
I
C
I
C
I
C
I
C
I
C
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 1 A
= 5 A
= 15 A
= 5 A
= 15 A
= 5 A
= 15 A
T
= 125°C
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743/743A
BD743B/743C
45
60
80
100
40
20
5
0.1
0.1
0.1
0.1
5
5
5
5
0.1
0.1
150
1
3
1
3
V
mA
mA
V
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 1.4 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Delay time
t
d
t
Rise time 350 ns
r
Storage time 500 ns
t
s
Fall time 400 ns
t
f
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
I
C
V
BE(off)
= 5 A
= -4.2 V
I
B(on)
R
= 6 Ω
L
= 0.5 A
†
I
= -0.5 A
B(off)
= 20 µs, dc ≤ 2%
t
p
PRODUCT INFORMATION
MIN TYP MAX UNIT
20 ns
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BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
- DC Current Gain
FE
h
VCE = 4 V
tp = 300 µs, duty cycle < 2%
10
0·1 1·0 10 100
IC - Collector Current - A
TC = 125°C
TC = 25°C
TC = -55°C
Figure 1. Figure 2.
TCS637AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
10
I
C
= 10
I
B
tp = 300µs, duty cycle < 2%
1·0
0·1
- Collector-Emitter Saturation Voltage - V
CE(sat)
V
0·01
0·1 1·0 10 100
IC - Collector Current - A
TCS637AB
TC = -55°C
TC = 25°C
TC = 125°C
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
10
VCE = 4 V
tp = 300µs, duty cycle < 2%
1·0
- Base-Emitter Voltage - V
BE
V
0·1
0·1 1·0 10 100
IC - Collector Current - A
TCS637AC
TC = -55°C
TC = 25°C
TC = 125°C
Figure 3.
PRODUCT INFORMATION
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BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
100
10
1·0
- Collector Current - A
C
I
0·1
0·01
1·0 10 100 1000
VCE - Collector-Emitter Voltage - V
SAFE OPERATING AREA
tp = 1 ms,
d = 0.1 = 10%
tp = 10 ms,
d = 0.1 = 10%
tp = 50 ms,
d = 0.1 = 10%
DC Operation
BD743
BD743A
BD743B
BD743C
SAS637AA
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
90
80
70
60
50
40
30
- Maximum Power Dissipation - W
tot
20
P
10
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
TIS637AA
PRODUCT INFORMATION
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Figure 5.
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BD743, BD743A, BD743B, BD743C
Version 1, 18.0 mm. Version 2, 17.6 mm.
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
3,96
ø
3,71
see Note B
see Note C
0,97
0,61
10,4
10,0
1 2 3
1,70
1,07
2,74
2,34
5,28
4,88
2,95
2,54
6,1
3,5
4,70
4,20
1,32
1,23
6,6
6,0
15,90
14,55
14,1
12,7
0,64
0,41
2,90
2,40
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
PRODUCT INFORMATION
VERSION 2 VERSION 1
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBE
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BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
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