Page 1
BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD676A, BD678A, BD680A and BD682 respectively
BD675A/677A/679A/681
TO-126
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
1
1. Emitter 2.Collector 3.Base
Symbol Parameter Value Units
V
CBO
VCEO
VEBO
IC
ICP
IB
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage : BD675A
: BD677A
: BD679A
: BD681
Collector-Emitter Voltage : BD675A
: BD677A
: BD679A
: BD681
45
60
80
100
45
60
80
100
V
V
V
V
V
V
V
V
Emitter-Base Voltage 5 V
Collector Current (DC) 4 A
*Collector Current (Pulse) 6 A
Base Current 100 mA
Collector Dissipation (TC=25°C) 40 W
Junction T emperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage
CEO
I
I
CBO
CEO
Collector-Base Voltage : BD675A
Collector Cut-off Current : BD675A
: BD677A
: BD679A
: BD681
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage
V
CE
(on) * Base-Emitter ON Voltage : BD675A/677A/679A
V
BE
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2000 Fairchild Semiconductor International Rev. A, February 2000
Emitter Cut-off Current V
* DC Current Gain : BD675A/677A/679A
: BD675A
: BD677A
: BD679A
: BD681
: BD677A
: BD679A
: BD681
: BD681
: BD675A/677A/679A
: BD681
: BD681
I
= 50mA, IB = 0 45
C
60
80
100
V
= 45V, IE = 0
CB
= 60V, IE = 0
V
CB
= 80V, IE = 0
V
CB
V
= 100V, V
CB
V
= 45V, V
CE
= 60V, V
V
CE
= 80V, V
V
CE
V
= 100V, V
CE
= 5V, IC = 0 2 mA
EB
V
= 3V, IC = 2A
CE
= 3V, IC = 1.5A
V
CE
= 2A, IB = 40mA
I
C
I
= 1.5A, IB = 30mA
C
V
= 3V, IC = 2A
CE
= 3V, IC = 1.5A
V
CE
BE
BE
BE
BE
BE
= 0
= 0
= 0
= 0
= 0
750
750
200
200
200
200
500
500
500
500
2.8
2.5VV
2.5
2.5VV
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
Page 2
Typical Characteristics
BD675A/677A/679A/681
10000
1000
, DC CURRENT GAIN
FE
h
100
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
VCE = 3V
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
[A], COLLECTOR CURRENT
C
0.6
I
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
VBE[V], BASE-EMITTER VOLTAGE
VCE = 3V
Ic = 250 I
2.4
2.0
1.6
1.2
0.8
(sat)[V], SATURATION VOLTAGE
0.4
CE
V
0.0
0.1 1 10
B
IC[A], COLLECTOR CURRENT
DC
BD675A
BD677A
BD679A
BD681
10µs
100µs
1ms
10ms
10
IC(max). Pulsed
IC(max). Continuous
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
50
40
30
20
10
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Page 3
Package Demensions
BD675A/677A/679A/681
TO-126
ø3.20
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
3.90
±0.10
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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