Page 1
BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682, BD682T
Plastic Medium−Power
Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
• High DC Current Gain −
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
• Monolithic Construction
• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
• BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
• Pb−Free Package are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
Collector-Base Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
Emitter-Base Voltage V
Collector Current I
Base Current I
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
V
CEO
V
P
TJ, T
R
CB
EB
C
B
D
−55 to +150 °C
stg
q
JC
45
60
80
100
45
60
80
100
5.0 Vdc
4.0 Adc
0.1 Adc
40
0.32
3.13 °C/W
Vdc
Vdc
W
W/°C
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4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLT, 40 WATT
TO−225AA
CASE 77
STYLE 1
3
2
1
MARKING DIAGRAMS
YWW
BD6xxG
BD6xx = Device Code
xx =76, 76A, 78, 78A,
80, 80A, 82, or 82T
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
YWW
B
BD6xxG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 12
Publication Order Number:
BD676/D
Page 2
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) BD676, 676A
= 50 mAdc, IB = 0) BD678, 678A
(I
C
ОООООООООООООООООООО
ОООООООООООООООООООО
Collector Cutoff Current (VCE = Half Rated V
CEO
, IB = 0)
BD680, 680A
BD682
Collector Cutoff Current
(VCB = Rated BV
ОООООООООООООООООООО
(VCB = Rated BV
, IE = 0)
CEO
. IE = 0, TC = 100°C)
CEO
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD676, 678, 680, 682
ОООООООООООООООООООО
(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A
Collector−Emitter Saturation Voltage (Note 1)
ОООООООООООООООООООО
(IC = 1.5 Adc, IB = 30 mAdc) BD678, 680, 682
(IC = 2.0 Adc, IB = 40 mAdc) BD676A, 678A, 680A
ОООООООООООООООООООО
Base−Emitter On Voltage (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD678, 680, 682
ОООООООООООООООООООО
(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
BV
CEO
ÎÎÎ
ÎÎÎ
I
CEO
I
CBO
ÎÎÎ
I
EBO
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
V
BE(on)
ÎÎÎ
h
fe
Min
45
60
Î
80
Î
100
−
−
Î
−
−
750
Î
750
Î
−
−
Î
−
Î
−
1.0
Max
−
−
ÎÎ
−
ÎÎ
−
500
0.2
ÎÎ
2.0
2.0
−
ÎÎ
−
ÎÎ
2.5
2.8
ÎÎ
2.5
ÎÎ
2.5
−
Unit
Vdc
Î
Î
mAdc
mAdc
Î
mAdc
−
Î
−
Î
Vdc
Î
Vdc
Î
−
50
45
40
35
30
25
20
15
10
, POWER DISSIPATION (WATTS)
D
P
5.0
0
15 30 45 60 75 105 135 150 165
12090
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
5.0
2.0
1.0
BONDING WIRE LIMIT
0.5
THERMAL LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
0.2
, COLLECTOR CURRENT (AMP)
C
I
0.1
0.05
1.0
TC = 25°C
2.0 5.0 10 50 100
BD676, 676A
BD678, 678A
BD680, 680A
BD682
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
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2
Page 3
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
PNP
BD676, 676A
BD678, 678A
BD680, 680A
BD682
BASE
[ 8.0 k [ 120
COLLECTOR
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device Package Shipping
BD676 TO−225AA 500 Units / Box
BD676G TO−225AA
(Pb−Free)
BD676A TO−225AA 500 Units / Box
BD676AG TO−225AA
(Pb−Free)
BD678 TO−225AA 500 Units / Box
BD678G TO−225AA
(Pb−Free)
BD678A TO−225AA 500 Units / Box
BD678AG TO−225AA
(Pb−Free)
BD680 TO−225AA 500 Units / Box
BD680G TO−225AA
(Pb−Free)
BD680A TO−225AA 500 Units / Box
BD680AG TO−225AA
(Pb−Free)
BD682 TO−225AA 500 Units / Box
BD682G TO−225AA
(Pb−Free)
BD682T TO−225AA 50 Units / Rail
BD682TG TO−225AA
(Pb−Free)
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
50 Units / Rail
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3
Page 4
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
−B−
−A−
K
F
M
U
Q
132
H
V
G
0.25 (0.010) B
S
D
2 PL
M
0.25 (0.010) B
A
C
J
R
M
M
A
M
M
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
__
Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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For additional information, please contact your
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BD676/D
4
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