Page 1
BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682, BD682T
Plastic Medium-Power
Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
• High DC Current Gain −
= 750 (Min) @ IC = 1.5 and 2.0 Adc
h
FE
• Monolithic Construction
• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
• BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
• Pb−Free Package are Available*
http://onsemi.com
4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLT, 40 WATT
COLLECTOR 2
BASE
3
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage V
Collector Current I
Base Current I
Total Device Dissipation
@ T
= 25°C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
V
CEO
V
P
TJ, T
CB
EB
C
B
D
−55 to +150 °C
stg
45
60
80
100
45
60
80
100
5.0 Vdc
4.0 Adc
0.1 Adc
40
0.32
Vdc
Vdc
W/°C
W
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
R
q
JC
3.13 °C/W
EMITTER 1
TO−225AA
CASE 77
STYLE 1
3
2
1
MARKING DIAGRAMS
YWW
BD6xxG
BD6xx = Device Code
xx = 76, 76A, 78, 78A,
80, 80A, 82, or 82T
Y = Year
WW = Work Week
G=Pb−Free Package
YWW
B
BD6xxG
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 13
Publication Order Number:
BD676/D
Page 2
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) BD676, 676A
(I
= 50 mAdc, IB = 0) BD678, 678A
C
BD680, 680A
BD682
Collector Cutoff Current (VCE = Half Rated V
CEO
, IB = 0)
Collector Cutoff Current
(V
= Rated BV
CB
= Rated BV
(V
CB
, IE = 0)
CEO
. IE = 0, TC = 100°C)
CEO
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
= 1.5 Adc, VCE = 3.0 Vdc) BD676, 678, 680, 682
C
= 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A
(I
C
Collector−Emitter Saturation Voltage (Note 1)
(I
= 1.5 Adc, IB = 30 mAdc) BD678, 680, 682
C
= 2.0 Adc, IB = 40 mAdc) BD676A, 678A, 680A
(I
C
Base−Emitter On Voltage (Note 1)
(I
= 1.5 Adc, VCE = 3.0 Vdc) BD678, 680, 682
C
= 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A
(I
C
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
BV
CEO
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
h
fe
Min
45
60
80
100
−
−
−
−
750
750
−
−
−
−
1.0
Max
−
−
−
−
500
0.2
2.0
2.0
−
−
2.5
2.8
2.5
2.5
−
Unit
Vdc
mAdc
mAdc
mAdc
−
−
Vdc
Vdc
−
50
45
40
35
30
25
20
15
, POWER DISSIPATION (WATTS)
10
D
P
5.0
0
15 30 45 60 75 105 135 150 165
12090
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
5.0
2.0
1.0
BONDING WIRE LIMIT
0.5
THERMAL LIMIT at T
= 25°C
C
SECONDARY BREAKDOWN LIMIT
0.2
, COLLECTOR CURRENT (AMP)
C
I
0.1
0.05
1.0
TC = 25°C
2.0 5.0 10 50 100
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
BD676, 676A
BD678, 678A
BD680, 680A
BD682
20
Figure 2. DC Safe Operating Area
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
http://onsemi.com
2
Page 3
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
PNP
BD676, 676A
BD678, 678A
BD680, 680A
BD682
BASE
[ 8.0 k [ 120
COLLECTOR
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device Package Shipping
BD676 TO−225AA 500 Units / Box
BD676G TO−225AA
(Pb−Free)
BD676A TO−225AA 500 Units / Box
BD676AG TO−225AA
(Pb−Free)
BD678 TO−225AA 500 Units / Box
BD678G TO−225AA
(Pb−Free)
BD678A TO−225AA 500 Units / Box
BD678AG TO−225AA
(Pb−Free)
BD680 TO−225AA 500 Units / Box
BD680G TO−225AA
(Pb−Free)
BD680A TO−225AA 500 Units / Box
BD680AG TO−225AA
(Pb−Free)
BD682 TO−225AA 500 Units / Box
BD682G TO−225AA
(Pb−Free)
BD682T TO−225AA 50 Units / Rail
BD682TG TO−225AA
(Pb−Free)
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
50 Units / Rail
http://onsemi.com
3
Page 4
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
−B−
−A−
K
F
M
U
Q
132
H
V
G
0.25 (0.010) B
S
D
2 PL
M
0.25 (0.010) B
A
C
J
R
M
M
A
M
M
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
__
Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 --- 1.02 ---
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BD676/D
4
Loading...