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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Dalington Power Transistors BD643
DESCRIPTION
·With TO-220C package
·Complement to type BD644
·DARLINGTON
APPLICATIONS
·For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 45 V
CBO
V
Collector-emitter voltage Open base 45 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current-DC 8 A
ICM Collector current-Pulse 12 A
IB Base current 150 A
T
PC Collector power dissipation
Tj Junction temperature 150
=25℃
C
62.5 W
℃
T
Storage temperature -55~150
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.5
th j-c
℃
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Dalington Power Transistors BD643
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=0.1A, IB=0 45 V
(BR)CEO
Collector-base breakdown voltage IC=5mA, IE=0 45 V
(BR)CBO
Emitter-base breakdown voltage IE=2mA, IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V
CEsat
VBE Base-emitter voltage IC=3A , VCE=3V 2.5 V
I
Collector cut-off current VCB=V
CBO
I
Collector cut-off current VCE=1/2 V
CEO
I
Emitter cut-off current VEB=5V; IC=0 5 mA
EBO
h
DC current gain IC=0.5A ; VCE=3V 1500
FE-1
h
DC current gain IC=3A ; VCE=3V 750
FE-2
; IE=02 0.2 mA
CBMax
; IB=0 0.5 mA
CEMax
h
DC current gain IC=6A ; VCE=3V 750
FE-3
VF Diode forward voltage IF=3A 1.8 V
fT Transition frequency IC=3A;VCE=3V;f=1MHz 7 MHz
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Dalington Power Transistors BD643
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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