Datasheet BD546C, BD546A, BD546 Datasheet (Power Innovations)

BD546, BD546A, BD546B, BD546C

PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

● Designed for Complementary Use with the

BD545 Series

SOT-93 PACKAGE

(TOP VIEW)

● 85 W at 25°C Case Temperature

B

1

● 15 A Continuous Collector Current

● Customer-Specified Selections Available

C

E

Pin 2 is in electrical contact with the mounting base.

2

3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

BD546

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage V
Continuous collector current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Operating free air temperature range T
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

= 0)

E

= 0) (see Note 1)

B

BD546A
BD546B
BD546C
BD546
BD546A
BD546B
BD546C

V

V

CBO

CEO

EBO

C
tot
tot

A

j

stg

L

MDTRAA

-40

-60

-80

-100

-40

-60

-80

-100

-5 V

-15 A
85 W

3.5 W

-65 to +150 °C

-65 to +150 °C

-65 to +150 °C
260 °C

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BD546

V

(BR)CEO

I

CES

I

CEO

I

EBO

h

V

CE(sat)

V

h

|hfe|

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector cut-off
current
Emitter cut-off
current

Forward current

FE

transfer ratio
Collector-emitter

saturation voltage
Base-emitter

BE

voltage
Small signal forward

fe

current transfer ratio
Small signal forward
current transfer ratio

= -30 mA

I

C

IB = 0

(see Note 4)
V

= -40 V

CE

= -60 V

V

CE

= -80 V

V

CE

= -100 V

V

CE

VCE= -30 V

= -60 V

V

CE

= -5 V IC= 0 -1 mA

V

EB

V

= -4 V

CE

= -4 V

V

CE

= -4 V

V

CE

IB = -625 mA

= -2 A

I

B

= -4 V IC= -10 A (see Notes 4 and 5) -1.8 V

V

CE

= -10 V IC= -0.5 A f = 1 kHz 20

V

CE

= -10 V IC= -0.5 A f = 1 MHz 3

V

CE

V

BE

V

BE

V

BE

V

BE

I

= 0

B

= 0

I

B

I

= -1 A

C

= -5 A

I

C

= -10 A

I

C

I

= -5 A

C

= -10 A

I

C

= 0
= 0
= 0
= 0

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

BD546A
BD546B
BD546C
BD546
BD546A
BD546B
BD546C
BD546/546A
BD546B/546C

(see Notes 4 and 5)

(see Notes 4 and 5)

-40

-60

-80

-100

60
25
10

-0.4

-0.4

-0.4

-0.4

-0.7

-0.7

-0.8

-1

V

mA

mA

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

Junction to case thermal resistance 1.47 °C/W

θJC

Junction to free air thermal resistance 35.7 °C/W

θJA

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Turn-on time IC = -6 A

t

on

t

Turn-off time 0.7 µs

off

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

V

BE(off)

= 4 V

I

B(on)

R

= 5 Ω

L

= -0.6 A

†

I

= 0.6 A

B(off)

= 20 µs, dc ≤ 2%

t

p

MIN TYP MAX UNIT

0.4 µs

PRODUCT INFORMATION

2

BD546, BD546A, BD546B, BD546C

PNP SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

JUNE 1973 - REVISED MARCH 1997

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

1000

VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%

100

- DC Current Gain

FE

h

10

1

-0·1 -1·0 -10
IC - Collector Current - A

Figure 1. Figure 2.

TCS634AJ

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

-10

-1·0

-0·1

- Collector-Emitter Saturation Voltage - V

CE(sat)

V

-0·01

-0·01 -0·1 -1·0 -10
IB - Base Current - A

TCS634AB

IC = -1 A
IC = -3 A
IC = -6 A
IC = -10 A

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

-1·6
VCE = -4 V
TC = 25 °C

-1·4

-1·2

-1·0

- Base-Emitter Voltage - V

BE

V

-0·8

-0·6

-0·1 -1·0 -10
IC - Collector Current - A

Figure 3.

TCS634AC

PRODUCT INFORMATION

3

BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

-100

-10

-1·0

- Collector Current - A

C

I

-0·1

-0·01

-1·0 -10 -100 -1000

SAFE OPERATING AREA

BD546
BD546A
BD546B
BD546C

VCE - Collector-Emitter Voltage - V

SAS634AE

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs

CASE TEMPERATURE

100

80

60

40

- Maximum Power Dissipation - W

tot

20

P

0

0 25 50 75 100 125 150

TC - Case Temperature - °C

TIS633AC

PRODUCT INFORMATION

4

Figure 5.

BD546, BD546A, BD546B, BD546C

PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

MECHANICAL DATA

SOT-93
3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

SOT-93

4,1

ø

4,0

12,2 MAX.

1,30
1,10

1 2

15,2
14,7

11,1
10,8

4,90
4,70

1,37
3,95
4,15

16,2 MAX.

31,0 TYP.

18,0 TYP.

3

1,17

0,78
0,50

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

PRODUCT INFORMATION

MDXXAW

5

BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

6